ANADIGICS AWM6433

AWM6433
3.4 - 3.6 GHz
WiMAX Power Amplifier Module
preliminary data sheet - rev 1.0
FEATURES
• InGaP HBT Technology
• 30 dB Gain
• < 3 % EVM at +22 dBm (+3.3 V Supply)
• 4 % EVM at +23 dBm (+3.3 V Supply)
• < 3 % EVM at +23 dBm (+4.2 V Supply)
• 4 % EVM at +24 dBm (+4.2 V Supply)
• High Efficiency
• Integrated 25 dB Attenuator
• Integrated Output Power Detector
• 50  Matched RF Ports for Reduced External
Component Count
• 4.5 mm x 4.5 mm x 1.0 mm Surface Mount
Module, Materials Set Consistent with RoHS
Directives
M35 Package
12 Pin 4.5 mm x 4.5 mm x 1.0 mm
Surface Mount Module
APPLICATIONS
• WiMAX Tranceivers That Support the IEEE
802.16d-2004, IEEE 802.16e-2005, and the
ETSI EN301-021 Wireless standards
PRODUCT DESCRIPTION
The ANADIGICS AWM6433 WiMAX Power Amplifier
is a high performance device that delivers exceptional
linearity and efficiency at high levels of output power.
Designed for portable or mobile applications in the
3.4-3.6 GHz band, it supports the IEEE 802.16e-2005
wireless standard, as well as the IEEE 802.16d-2004
and ETSI EN301-021 standards.
The device requires only a nominal +3.3 V supply and
a low-current bias input. An increase in supply voltage
produces an increase in the maximum linear output
power. The integrated detector can be used to monitor
output power, and the integrated 25 dB step attenuator
enables gain control. No external circuits are required
for biasing or RF impedance matching, thus reducing
external component costs and facilitating circuit board
designs.
The AWM6433 is manufactured using advanced
InGaP HBT technology that offers state-of-the-art
reliability, temperature stability, and ruggedness. It is
offered in a 4.5 mm x 4.5 mm x 1.0 mm surface mount
module optimized for use in a 50  system.
Supply
Voltage
RF Input
Supply
Voltage
Step
Attenuator
Matching
Network
Bias
Control
Attenuator
Control
Bias
Voltage
RF Output
Power
Detector
Detector
Ouput
Ground
Figure 1: Functional Block Diagram
12/2008
AWM6433
VCC
1
12 VCC
rFin
2
11 Gnd
Gnd
3
10 rFOUt
VBiAs
4
9
Gnd
VCC
5
8
Gnd
VAttn
6
7
det
Gnd
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
2
pin
nAMe
desCriptiOn
1
VCC
Supply Voltage
2
RFIN
RF Input
3
GND
Ground
4
VBIAS
Bias/Shutdown
5
VCC
Supply Voltage
6
VATTN
Attenuator Control
7
DET
Detector Output
8
GND
Ground
9
GND
Ground
10
RFOUT
RF Output
11
GND
Ground
12
VCC
Supply Voltage
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
AWM6433
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
pArAMeter
Min
MAX
Unit
Supply Voltage (VCC)
0
+5.0
V
Bias Voltage (VBIAS)
0
+3.0
V
Attenuator Control Voltage (VATTN)
0
+3.7
V
RF Input Power
-
0
dBm
ESD Rating
Human Body Model
Charged Device Model
TBD
TBD
-
V
MSL Level
TBD
-
-
Storage Temperature
-40
+150
°C
COMMents
OFDM modulated signal
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
pArAMeter
Min
typ
MAX
Unit
Operating Frequency (f)
3400
-
3600
MHz
Supply Voltage (VCC)
+2.9
+3.3
+4.2
V
Bias Voltage (VBIAS)
+2.80
0
+2.85
-
+2.90
+0.7
V
PA"on"
PA"shut down"
+2.3
0
-
+3.7
+0.7
V
Attenuator enabled
Nominal gain
RF Output Power (POUT)
-
+23
-
dBm
Case Temperature (TC)
-40
-
+85
°C
Attenuator Control Voltage (VATTN)
Logic High
Logic Low
COMMents
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
3
AWM6433
Table 4: Electrical Specifications
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, f = 3.6 GHz, 50 Ω system)
pArAMeter
Min
typ
MAX
Unit
Gain
-
31
-
dB
Attenuator Step
-
25
-
dB
Output Power Meets Spectrum Mask
-
+24
-
dBm
EVM
-
2.8
4
3.2
-
%
Output P1dB
-
+29
-
dBm
CW
Output IP3
-
+40
-
dBm
two CW tones, +19 dBm
output per tone
Harmonics
-
-30
-
dBc
at +24 dBm POUT
Power-Added Efficiency
-
23
-
%
at +24 dBm POUT
Power Detector Voltage
at +24 dBm POUT
at +14 dBm POUT
-
+2.15
+0.85
-
V
High impedance load
Quiescent Current
-
135
-
mA
Current Consumption
VCC
VCC
VBIAS
VATTN
-
280
325
6.5
0.2
8.0
1.0
Leakage Current (2)
-
1.7
3.0
mA
mA
COMMents
ETSI EN301-021 Type G
at +22 dBm POUT
at +23 dBm POUT
at +22 dBm POUT
at +24 dBm POUT
Logic High = +3.3 V
PA shut down (VBIAS = 0V)
See figure 7 Application
Circuit.
Notes:
1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted.
(2) Lower leakage current may be obtained by using an alternate application circuit. Please refer to the ANADIGICS
application note titled, “AWM6423 Reduced leakage current in Off State.”
4
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
AWM6433
PERFORMANCE DATA
Figure 3: Gain vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
Figure 4: Uncorrected EVM vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps
OFDM Modulation, system EVM approx. 0.8 %)
7.0
35
34
3.30 GHz
3.40 GHz
3.50 GHz
3.60 GHz
6.0
33
5.0
31
eVM (%)
Gain (dB)
32
30
29
3.30 GHz
3.40 GHz
3.50 GHz
3.60 GHz
28
27
4.0
3.0
2.0
1.0
26
0.0
25
13
14
15
16
17
18
19
20
21
22
23
24
13
25
14
15
16
17
Figure 5: Supply Current vs. Output Power
(TC = +25 °C, VCC = +3.3V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
3.30 GHz
3.40 GHz
3.50 GHz
3.60 GHz
icc (mA)
300
20
21
22
23
24
25
2.50
3.30 GHz
3.40 GHz
3.50 GHz
3.60 GHz
2.25
350
19
Figure 6: Detector Voltage vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
2.00
detector Voltage (V)
400
18
Output power (dBm)
Output power (dBm)
250
200
1.75
1.50
1.25
1.00
150
0.75
100
13
14
15
16
17
18
19
20
Output power (dBm)
21
22
23
24
25
0.50
13
14
15
16
17
18
19
20
21
22
23
24
25
Output power (dBm)
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
5
AWM6433
APPLICATION INFORMATION
Transmit Disable and Attenuator Control
The power amplifier is disabled by setting VBIAS below
+0.7 V. The step attenuator is enabled by applying a
logic high to VATTN; the PA exhibits nominal gain when
a logic low is applied to VATTN.
VCC
VCC
2.2 F
RF IN
VBIAS
100 pF
VCC
0.1 F
VATTN
VCC
VCC
12
2
RFIN
GND
11
3
GND
RFOUT
10
4
VBIAS
GND
9
5
VCC
GND
8
6
VATTN
DET
7
GND
at slug
2.2 F
RF OUT
DETOUT
4.7 K
Figure 7: Application Circuit
6
1 F
0.01 F
1
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
0.1 F
AWM6433
Figure 8: Land Pattern
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
7
AWM6433
PACKAGE OUTLINE
Figure 9: M35 Package Outline - 12 Pin 4.5 mm x 4.5 mm x 1.0 mm Surface Mount Module
8
PRELIMINARY DATA SHEET - Rev 1.0
12/2008
AWM6433
ORDERING INFORMATION
Order nUMBer
teMperAtUre
rAnGe
pACKAGe desCriptiOn
COMpOnent pACKAGinG
AWM6433RM35P8
-40 °C to +85 °C
12 Pin
4.5 mm x 4.5 mm x 1.0 mm
Surface Mount Module
2,500 piece Tape and Reel
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
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PRELIMINARY DATA SHEET - Rev 1.0
12/2008