ANADIGICS AWT6172RM33P9

AWT6172
GSM/GPRS/EDGE Power Amplifier
Module with Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.4
PRODUCT DESCRIPTION
features
This quad band power amplifier module supports dual,
tri and quad band applications for both GMSK and
8-PSK modulation schemes. There are two amplifier
chains, one to support GSM850/900 bands, the other
for DCS/PCS bands.
• InGaP HBT Technology
• Low profile 1.1 mm
• Small Package Outline 6 mm x 6 mm
• EGPRS Capable (class 12)
• Integrated Reference Voltage
GMSK MODE
• Integrated power control (CMOS)
• +35 dBm GSM850/900 Output Power
• +33 dBm DCS/PCS Output Power
• 55 % GSM850/900 PAE
• 52 % DCS/PCS PAE
• Power control range > 50 dB
EDGE MODE
• +28.5 dBm GSM850/900 Output Power
• +27.5 dBm DCS/PCS Output Power
• -66 dBc Typical ACPR (400 kHz)
• -78 dBc Typical ACPR (600 kHz)
APPLICATIONS
•
The module includes an integrated power control
scheme for use in the GMSK mode. This facilitates
fast and easy production calibration and reduces the
number of external components required to complete
a power control function. The amplifier’s power control
range is typically 55 dB, with the output power set by
applying an analog voltage to VRAMP.
In EDGE mode, the VRAMP pin is disabled and no specific voltage is required for proper operation. Output
power is controlled by varying the input power.
All of the RF ports for this device are internally matched
to 50Ω.
Dual/Tri/Quad Band Handsets, PDAs and Data
Devices
DCS/PCS_OUT
DCS/PCS_IN
GSM850/900_OUT
GSM850/900_IN
Figure 1: Block Diagram
02/2009
AWT6172
DCS/PCS_IN
DCS/PCS_OUT
BS
GSM850/900_IN
GSM850/900_OUT
Figure 2: Pinout (X - ray Top View)
2
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
AWT6172
Table 1: Pin Description
PIN
NaMe
1
DCS/PCS_IN
RF input to the DCS/PCS PA. There is a 175  shunt resistor before the DC
blocking capacitor to set the input impedance
2
BS
Band select logic pin. Logic low selects the GSM PA and a logic high selects
the DCS/PCS PA
3
TX_EN
4
VBATT
Battery supply connection
5
VMODE
Logic pin for selection of GMSK or 8PSK (EDGE) mode. A logic low selects
GMSK mode and a logic high selects the 8PSK mode
6
VRAMP
Analog output power control pin
7
GSM850/900_IN
8
VBIAS
VBIAS logic input. A logic low sets a low bias point for current savings at low
power levels, a logic high sets a high bias point for meeting linearity
perfomance up to the maximum specified linear ouptut power
9
GND
Ground
10
GND
Ground
11
DesCrIPtION
TX enable logic pin, a logic high will enable the PA
RF input to GSM850/900 PA.
GSM850/900_OUT RF output for GSM850/900 bands (DC blocked)
12
GND
Ground
13
GND
Ground
14
GND
Ground
15
GND
Ground
16
GND
Ground
17
DCS/PCS_OUT
18
GND
Ground
19
GND
Ground
20
GND
Ground
RF output for DCS/PCS bands (DC blocked)
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
3
AWT6172
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
ParaMeter
MIN
MaX
uNIts
Supply Voltage (VBATT)
-0.5
+6
V
RF Input Power (RFIN)
-
12
dBm
Control Voltage (VRAMP)
-0.3
3.0
V
Storage Temperature (TSTG)
-55
150
°C
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these
conditions. Exposure to absolute ratings for extended periods
of time may adversely affect reliability.
Table 3: ESD Ratings
ParaMeter
MetHOD
ratING
uNIt
ESD Threshold voltage (RF ports)
HBM
2.5
kV
ESD Threshold voltage (control inputs)
HBM
2.5
kV
Although protection circuitry has been designed into this device, proper precautions
should be taken to avoid exposure to electrostatic discharge (ESD) during handling and
mounting. Human body model HBM employed is resistance = 1500Ω, capacitance = 100pF.
Table 4: Digital Inputs
ParaMeter
sYMBOL
MIN
tYP
MaX
uNIts
Logic High Voltage
VIH
1.2
-
3.0
V
Logic Low Voltage
VIL
-0.5
-
0.5
V
Logic High Current
|IIH|
-
-
30
A
Logic Low Current
|IIL|
-
-
30
A
4
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
AWT6172
Table 5: Logic Control Table
OPeratIONaL MODe
vMODe
Bs
tX_eN
vBIas
GSM850/900 GMSK
LOW
LOW
HIGH
X
VRAMP Controls Output
Power, X = Don't Care
DCS/PCS GMSK
LOW
HIGH
HIGH
X
VRAMP Controls Output
Power, X = Don't Care
GSM850/900 EDGE
HIGH
LOW
HIGH
HIGH
VRAMP Control Disabled,
Fixed Gain PA
DCS/PCS EDGE
HIGH
HIGH
HIGH
HIGH
VRAMP Control Disabled,
Fixed Gain PA
GSM850/900 EDGE (Low Power
Levels) (1)
HIGH
LOW
HIGH
LOW
VRAMP Control Disabled,
Fixed Gain PA
DCS/PCS EDGE (Low Power
Levels) (2)
HIGH
HIGH
HIGH
LOW
VRAMP Control Disabled,
Fixed Gain PA
X
X
LOW
X
PA DISABLED
NOtes
X = Don't Care
Notes:
(1) POUT  +20 dBm.
(2) POUT  +19 dBm.
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
5
AWT6172
Table 6: Operating Ranges
ParaMeter
sYMBOL
MIN
tYP
MaX
uNIts
TC
-20
-
85
°C
Supply voltage
VBATT
3.2
3.6
4.5
V
Control voltage
VRAMP
0.25
-
2.2
V
VBATT = 4.5 V,
VRAMP = 0 V, TX_EN = LOW
No RF applied
-
-
5
A
VRAMP Input Capacitance
-
-
3
-
pF
VRAMP Input Current
-
-
-
10
A
-
0.4
1
s
-
0.5
1
s
-
0.4
1
s
-
-
1
s
-
-
50
%
Case temperature
Power supply leakage current
Rise Time (TRISE)
Fall Time (TFALL)
Mode Switch
VBIAS Switch
Duty Cycle
6
POUT = -10 dBm Y PMAX
(within 0.2 dB)
POUT = PMAX Y -10 dBm
(within 0.2 dB)
GMSK Y EDGE
EDGE Y GMSK
High Power Y Low Power
Low Power Y High Power
-
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
AWT6172
Table 7: Electrical Characteristics for GSM850 GMSK Mode
Unless otherwise specified: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = LOW, TX_EN = HIGH, VMODE = LOW
ParaMeter
MIN
tYP
MaX
uNIt
824
-
849
MHz
0
+2
+4
dBm
Output Power, PMAX
34.5
35.1
-
dBm
Degraded Output Power
32.5
33.5
-
dBm
47
54
-
%
Forward Isolation 1
-
-45
-30
dBm
TX_EN = LOW, PIN = +4 dBm
Forward Isolation 2
-
-28
-10
dBm
TX_EN = HIGH, V RAMP = 0.25 V,
PIN = +4 dBm
Cross Isolation
Fo @ DCS/PCS port
2Fo, 3Fo @ DCS/PCS port
-
-2
-22
+2
-16
dBm
POUT  34.5 dBm
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-21
-20
-20
-10
-10
-8
Operating Frequency
( Fo )
Input Power
PAE @ PMAX
dBm
COMMeNts
VBATT = 3.2 V, TC = +85 °C
PIN = 0 dBm
POUT  34.5 dBm
Output Load VSWR = 6:1, All Phases POUT  34.5 dBm
Stability (all spurious)
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz, RBW = 3 MHz
-
-
-30
dBm
FOUT > 1 GHz, RBW = 3 MHz
No Degradation, No Damage
RX Noise Power
-
-84
-81
dBm
Input Return Loss
-
-
2.5:1
VSWR
Load VSWR = 10:1, All Phase Angles;
POUT  34.5 dBm
FTX = 849 MHz, RBW = 100 kHz
FRX = 869 to 894 MHz, POUT < 34.5 dBm
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
7
AWT6172
Table 8: Electrical Characteristics for GSM900 GMSK Mode
Unless otherwise specified: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = LOW, TX_EN = HIGH, VMODE = LOW
ParaMeter
MIN
tYP
MaX
uNIt
880
-
915
MHz
0
+2
+4
dBm
Output Power, PMAX
34.5
35.1
-
dBm
Degraded Output Power
32.5
33.5
-
dBm
49
55
-
%
Forward Isolation 1
-
-45
-30
dBm
TX_EN = LOW, PIN = +4 dBm
Forward Isolation 2
-
-27
-10
dBm
TX_EN = HIGH, V RAMP = 0.25 V,
PIN = +4 dBm
Cross Isolation
Fo @ DCS/PCS port
2Fo, 3Fo @ DCS/PCS port
-
-2
-21
+2
-16
dBm
POUT  34.5 dBm
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-21
-23
-20
-10
-10
-8
Operating Frequency
( Fo )
Input Power
PAE @ PMAX
dBm
COMMeNts
VBATT = 3.2 V, TC = +85 °C
PIN = 0 dBm
POUT  34.5 dBm
Output Load VSWR = 6:1, All Phases POUT  34.5 dBm
Stability (all spurious)
Ruggedness
RX Noise Power
10 MHz Offset
-
-
-36
dBm
FOUT < 1 GHz, RBW = 3 MHz
-
-
-30
dBm
FOUT > 1 GHz, RBW = 3 MHz
No Degradation, No Damage
-
-80
-75
dBm
20 MHz Offset
Input Return Loss
8
-
-84
-81
-
-
2.5:1
Load VSWR = 10:1, All Phase Angles;
POUT  34.5 dBm
FTX = 915 MHz, RBW = 100 kHz
FRX = 925 to 935 MHz, POUT < 34.5 dBm
FTX = 915 MHz, RBW = 100 kHz
FRX = 935 to 960 MHz, POUT < 34.5 dBm
VSWR
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
AWT6172
Table 9: Electrical Characteristics for GSM850 EDGE Mode
Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%
ZIN = ZOUT = 50Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VMODE = HIGH
ParaMeter
MIN
tYP
MaX
uNIt
824
-
849
MHz
Linear POUT (High Power Mode)
Linear POUT (Low Power Mode)
28.5
20
-
-
dBm
Linear Degraded Output Power
LD_POUT (High Power Mode) (1)
LD_POUT (Low Power Mode) (2)
26
17.5
-
-
dBm
Linear Gain (High Power Mode)
29.0
31.5
34.0
dB
VBIAS = High
Linear Gain (Low Power Mode)
24.0
28.5
34.0
dB
VBIAS = Low
Gain Variation
-
-0.015
-
dB/oC
Power-Added Efficiency
-
22
-
%
Icq (Low Power Mode)
-
100
-
mA
Error Vector Magnitude (EVM)
-
2
5
%
Linearity
ACPR1
ACPR2
ACPR3
-
-38
-66
-79
-33
-58
-64
dBc
Cross Isolation
Fo @ DCS/PCS port
2Fo, 3Fo @ DCS/PCS port
-
-7
-50
0
-20
dBm
POUT < 28.5 dBm
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-40
-35
-20
-20
-15
-10
dBm
POUT < 28.5 dBm
Operating Frequency
( Fo )
COMMeNts
VBIAS = High
VBIAS = Low
Meets ACPR and EVM limits specified
under nominal conditions
-20 oC  TC  +85 oC
POUT = 28.5 dBm
VBIAS = Low
POUT < 28.5 dBm, BW = 30 kHz
Fo 200 kHz
Fo 400 kHz
Fo 600 kHz
Output Load VSWR = 6:1 All Phases, POUT < 28.5 dBm
Stability (all spurious)
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz, RBW = 3 MHz
-
-
-30
dBm
FOUT > 1 GHz, RBW = 3 MHz
No Degradation, No Damage
RX Noise Power
-
-83
Input Return Loss
-
-
-80
dBm
Load VSWR = 10:1, All Phase Angles;
POUT  28.5 dBm
FTX = 849 MHz, RBW = 100 kHz
FRX = 869 to 894MHz, POUT < 28.5 dBm
2.5:1 VSWR
Notes:
(1) VBIAS = High, VBATT = Range (3.2 V  VBATT  4.5 V), Temp = Range (-20 oC  TC  +85 oC).
(2) VBIAS = Low, VBATT = Range (3.2 V  VBATT  4.5 V), Temp = Range (-20 oC  TC  +85 oC).
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
9
AWT6172
Table 10: Electrical Characteristics for GSM900 EDGE Mode
Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%
ZIN = ZOUT = 50Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VMODE = HIGH
COMMeNts
MIN
tYP
MaX
uNIt
880
-
915
MHz
Linear POUT (High Power Mode)
Linear POUT (Low Power Mode)
28.5
20
-
-
dBm
Linear Degraded Output Power
LD_POUT (High Power Mode) (1)
LD_POUT (Low Power Mode) (2)
26
17.5
-
-
dBm
Linear Gain (High Power Mode)
29.0
32.0
34.0
dB
VBIAS = High
Linear Gain (Low Power Mode)
24
29.0
34
dB
VBIAS = Low
Gain Variation
-
-0.015
-
dB/oC
Power-Added Efficiency
-
22
-
%
Icq (Low Power Mode)
-
100
-
mA
Error Vector Magnitude (EVM)
-
2
5
%
Linearity
ACPR1
ACPR2
ACPR3
-
-36
-67
-79
-33
-58
-64
Cross Isolation
Fo @ DCS/PCS port
2Fo, 3Fo @ DCS/PCS port
-
-7
-50
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-40
-35
-20
ParaMeter
Operating Frequency
( Fo )
VBIAS = High
VBIAS = Low
Meets ACPR and EVM limits specified
under nominal conditions
-20 oC  TC  +85 oC
POUT = 28.5 dBm
VBIAS = Low
dBc
POUT < 28.5 dBm, BW = 30 kHz
Fo 200 kHz
Fo 400 kHz
Fo 600 kHz
0
-20
dBm
POUT < 28.5 dBm
-20
-15
-10
dBm
POUT < 28.5 dBm
Output Load VSWR = 6:1 All Phases, POUT < 28.5 dBm
Stability (all spurious)
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz, RBW = 3 MHz
-
-
-30
dBm
FOUT > 1 GHz, RBW = 3 MHz
No Degradation, No Damage
Load VSWR = 10:1, All Phase Angles;
POUT  28.5 dBm
Notes:
(1) VBIAS = High, VBATT = Range (3.2 V  VBATT  4.5 V), Temp = Range (-20 oC  TC  +85 oC).
(2) VBIAS = Low, VBATT = Range (3.2 V  VBATT  4.5 V), Temp = Range (-20 oC  TC  +85 oC).
10
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
AWT6172
Table 10: Electrical Characteristics for GSM900 EDGE Mode (Continued)
Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%
ZIN = ZOUT = 50Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VMODE = HIGH
ParaMeter
MIN
tYP
MaX
uNIt
COMMeNts
RX Noise Power
10 MHz Offset
-
-80
-75
dBm
20 MHz Offset
-
-83
-80
FTX = 915 MHz, RBW = 100 kHz
FRX = 925 to 935 MHz, POUT < 28.5 dBm
FTX = 915 MHz, RBW = 100 kHz
FRX = 935 to 960 MHz, POUT < 28.5 dBm
-
-
Input Return Loss
2.5:1 VSWR
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
11
AWT6172
Table 11: Electrical Characteristics for DCS GMSK Mode
Unless otherwise specified: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = HIGH, TX_EN = HIGH, VMODE =LOW
COMMeNts
ParaMeter
MIN
tYP
MaX
uNIt
Operating Frequency
1710
-
1785
MHz
Input Power
0
+2
+4
dBm
Output Power, PMAX
32
33
-
29.5
31
-
dBm
45
53
-
%
Forward Isolation 1
-
-40
-30
dBm
TX_EN = LOW, PIN = +4 dBm
Forward Isolation 2
-
-27
-10
dBm
TX_EN = HIGH, V RAMP = 0.25 V,
PIN = +4 dBm
Harmonics
Second Harmonic (2FO)
Third Harmonic (3FO)
4FO to 15FO
-
-23
-28
-20
-10
-10
-8
dBm
POUT < 32 dBm
Degraded Output Power
PAE @ PMAX
dBm
VBATT = 3.2 V, TC = +85 °C
PIN = 0 dBm
Output Load VSWR = 6:1 All Phases , POUT < 32dBm
Stability (all spurious)
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz, RBW = 3 MHz
-
-
-30
dBm
FOUT > 1 GHz, RBW = 3 MHz
No Degradation, No Damage
RX Noise Power
-
-87
-78
dBm
Input Return Loss
-
-
2.5:1
VSWR
12
Load VSWR = 10:1 All Phase Angles;
POUT < 32dBm
FTX = 1785 MHz, RBW = 100 kHz,
FRX =1805 to 1880 MHz, POUT < 32 dBm
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
AWT6172
Table 12: Electrical Characteristics for PCS GMSK Mode
Unless otherwise specified: VBATT = 3.6 V, PIN = +2.0 dBm, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 2.2 V, BS = HIGH, TX_EN = HIGH, VMODE =LOW
ParaMeter
MIN
tYP
MaX
uNIt
1850
-
1910
MHz
Input Power
0
+2
+4
dBm
Output Power, PMAX
32
33
-
dBm
29.5
31
-
dBm
45
52
-
%
Forward Isolation 1
-
-38
-30
dBm
TX_EN = LOW, PIN = +4 dBm
Forward Isolation 2
-
-26
-10
dBm
TX_EN = HIGH, V RAMP = 0.25 V,
PIN = +4 dBm
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-25
-30
-20
-10
-10
-8
dBm
Operating Frequency
( Fo )
Degraded Output Power
PAE @ PMAX
COMMeNts
VBATT = 3.2 V, TC = +85 °C
PIN = 0 dBm
POUT  32 dBm
Output Load VSWR = 6:1, All POUT  32 dBm
Stability (all spurious)
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz, RBW = 3 MHz
-
-
-30
dBm
FOUT > 1 GHz, RBW = 3 MHz
No Degradation, No Damage
RX Noise Power
-
-88
-79
dBm
Input Return Loss
-
-
2.5:1
VSWR
Load VSWR = 10:1, All Phase Angles;
POUT  32 dBm
FTX = 1910 MHz, RBW = 100 kHz
FRX = 1930 to 1990 MHz, POUT < 32 dBm
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
13
AWT6172
Table 13: Electrical Characteristics for DCS EDGE Mode
Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, VMODE = HIGH
ParaMeter
MIN
tYP
MaX
uNIt
1710
-
1785
MHz
Linear POUT (High Power Mode)
Linear POUT (Low Power Mode)
27.5
19
-
-
dBm
Linear Degraded Output Power
LD_POUT (High Power Mode) (1)
LD_POUT (Low Power Mode) (2)
25
16.5
-
-
dBm
Linear Gain (High Power Mode)
34
37
40
dB
VBIAS = High
Linear Gain (Low Power Mode)
30
36
40
dB
VBIAS = Low
Gain Variation
-
-0.04
-
dB/oC
Power-Added Efficiency
-
20
-
%
Icq (Low Power Mode)
-
120
-
mA
Error Vector Magnitude (EVM)
-
2
5
%
Linearity
ACPR1
ACPR2
ACPR3
-
-39
-65
-78
-33
-58
-64
dBc
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 7Fo
-
-38
-47
-20
-20
-20
-10
dBm
Operating Frequency
( Fo )
COMMeNts
VBIAS = High
VBIAS = Low
Meets ACPR and EVM limits specified
under nominal conditions
-20 oC  TC  +85 oC
POUT = 27.5 dBm
VBIAS = Low
POUT < 27.5 dBm, BW = 30 kHz
Fo 200 kHz
Fo 400 kHz
Fo 600 kHz
POUT < 27.5 dBm
Output Load VSWR = 6:1 All Phases, POUT < 27.5 dBm
Stability (all spurious)
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz, RBW = 3 MHz
-
-
-30
dBm
FOUT > 1 GHz, RBW = 3 MHz
No Degradation, No Damage
RX Noise Power
-
-81
Input Return Loss
-
-
-76
dBm
Load VSWR = 10:1, All Phase Angles;
POUT  27.5 dBm
FTX = 1785 MHz, RBW = 100 kHz
FRX = 1805 to 1880 MHz
POUT < 27.5 dBm
2.5:1 VSWR
Notes:
(1) VBIAS = High, VBATT = Range (3.2 V  VBATT  4.5 V), Temp = Range (-20 oC  TC  +85 oC).
(2) VBIAS = Low, VBATT = Range (3.2 V  VBATT  4.5 V), Temp = Range (-20 oC  TC  +85 oC).
14
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
AWT6172
Table 14: Electrical Characteristics for PCS EDGE Mode
Unless otherwise specified: VBATT = 3.6 V, Pulse Width =1154µs, Duty Cycle 25%,
ZIN = ZOUT = 50Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, VMODE = HIGH
ParaMeter
MIN
tYP
MaX
uNIt
1850
-
1910
MHz
Linear POUT (High Power Mode)
Linear POUT (Low Power Mode)
27.5
19
-
-
dBm
Linear Degraded Output Power
LD_POUT (High Power Mode) (1)
LD_POUT (Low Power Mode) (2)
25
16.5
-
-
dBm
Linear Gain (High Power Mode)
33.0
36
39.5
dB
VBIAS = High
Linear Gain (Low Power Mode)
29
35
39
dB
VBIAS = Low
Gain Variation
-
-0.044
-
dB/oC
Power-Added Efficiency
-
20
-
%
Icq (Low Power Mode)
-
120
-
mA
Error Vector Magnitude (EVM)
-
2
5
%
Linearity
ACPR1
ACPR2
ACPR3
-
-38
-64
-77
-33
-57
-64
Harmonics
Second Harmonic (2Fo)
Third Harmonic (3Fo)
4Fo to 15Fo
-
-40
-46
-20
-20
-20
-10
Operating Frequency
( Fo )
dBc
dBm
COMMeNts
VBIAS = High
VBIAS = Low
Meets ACPR and EVM limits specified
under nominal conditions
-20 oC  TC  +85 oC
POUT = 27.5 dBm
VBIAS = Low
POUT < 27.5 dBm, BW = 30 kHz
Fo 200 kHz
Fo 400 kHz
Fo 600 kHz
POUT < 27.5 dBm
Output Load VSWR = 6:1 All Phases, POUT < 27.5 dBm
Stability (all spurious)
Ruggedness
-
-
-36
dBm
FOUT < 1 GHz, RBW = 3 MHz
-
-
-30
dBm
FOUT > 1 GHz, RBW = 3 MHz
No Degradation, No Damage
RX Noise Power
-
-82
Input Return Loss
-
-
-76
dBm
Load VSWR = 10:1, All Phase Angles;
POUT  27.5 dBm
FTX = 1910 MHz, RBW = 100 kHz
FRX = 1930 to 1990 MHz
POUT < 27.5 dBm
2.5:1 VSWR
Notes:
(1) VBIAS = High, VBATT = Range (3.2 V  VBATT  4.5 V), Temp = Range (-20 oC  TC  +85 oC).
(2) VBIAS = Low, VBATT = Range (3.2 V  VBATT  4.5 V), Temp = Range (-20 oC  TC  +85 oC).
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
15
AWT6172
Application Information
DCS/PCS_IN
GSM850/900_IN
DCS/PCS_OUT
GSM850/900_OUT
Figure 3: Recommended Application Circuit
16
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
AWT6172
Package Outline
Figure 4: M33 Package Outline - 20 Pin 6 mm x 6 mm x 1.1 mm Surface Mount Module
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
17
AWT6172
Figure 5: Recommended PCB Footprint
18
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
AWT6172
Figure 5B: Recommended PCB Footprint Notes
PRELIMINARY DATA SHEET - Rev 1.4
02/2009
19
AWT6172
ORDERING INFORMATION
OrDer
NuMBer
teMPerature
raNGe
PaCKaGe
DesCrIPtION
COMPONeNt PaCKaGING
AWT6172RM33P8
-20 °C to +85°C
RoHS-compliant 20 Pin
6 mm x 6 mm x 1.1 mm
Surface Mount Module
Tape and Reel, 2500 pieces per reel
AWT6172RM33P9
-20 °C to +85°C
RoHS-compliant 20 Pin
6 mm x 6 mm x 1.1 mm
Surface Mount Module
Partial Tape and Reel
-20 °C to +85°C
Halogen-free and
RoHS-compliant 20 pin
6mm x 6mm x 1.1mm
Surface Mount Module
Tape and Reel, 2500 pieces per reel
-20 °C to +85°C
Halogen-free and
RoHS-compliant 20 pin
6mm x 6mm x 1.1mm
Surface Mount Module
Partial Tape and Reel
AWT6172HM33P8
AWT6172HM33P9
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
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PRELIMINARY DATA SHEET - Rev 1.4
02/2009