AO3435 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3435/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.5V. This device is suitable for use in buck convertor applications. AO3435 and AO3435L are electrically identical. -RoHS Compliant -AO3435L is Halogen Free VDS = -20V ID = -3.5A RDS(ON) < 70mΩ RDS(ON) < 90mΩ RDS(ON) < 110mΩ RDS(ON) < 130mΩ (VGS = -4.5V) (VGS =- 4.5V) (VGS = -2.5V) (VGS = -1.8V) (VGS = -1.5V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current TA=25°C TA=70°C ID IDM B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. ±8 V -3.5 -2.9 -2.7 -2.3 1.4 1 0.9 0.6 TJ, TSTG Symbol A -20 Units V A -25 PD TA=70°C Steady State RθJA RθJL -55 to 150 Typ 70 100 63 W °C Max 90 125 80 Units °C/W °C/W °C/W AO3435 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 TJ=55°C VGS=-4.5V, ID=-3.5A TJ=125°C Static Drain-Source On-Resistance VGS=-2.5V, ID=-3.0A Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge nA -1 V A 56 70 80 100 70 90 mΩ mΩ 110 mΩ 130 mΩ -1 V -1.4 A 745 pF VDS=-5V, ID=-3.5A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance ±100 85 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance -0.65 µA 100 Forward Transconductance Coss -5 VGS=-1.5V, ID=-0.5A VSD Crss Units VGS=-1.8V, ID=-2.0A gFS IS Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ 15 -0.7 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-3.5A S 80 pF 70 pF 15 23 Ω 8.5 11 nC 1.2 nC Qgd Gate Drain Charge 2.1 nC tD(on) Turn-On DelayTime 7.2 ns tr Turn-On Rise Time 36 ns tD(off) Turn-Off DelayTime 53 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-3.5A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-3.5A, dI/dt=100A/µs 27 VGS=-4.5V, VDS=-10V, RL=3Ω, RGEN=6Ω 56 ns 49 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air 12environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0 : April 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 -4.5V -2.5V 20 15 15 -ID(A) -ID (A) VDS=-5V -3.0V -2.0V 10 10 5 VGS=-1.5V 5 125°C 25°C 0 0 0 1 2 3 4 5 0 -VDS (Volts) Figure 1: On-Region Characteristics 1.5 2 2.5 3 1.6 Normalized On-Resistance VGS=-1.5V 130 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics 150 VGS=-1.8V 110 90 VGS=-2.5V 70 VGS=-4.5V 50 VGS=2.5V 1.4 VGS=-4.5V ID=-3.5A 1.2 VGS=-1.5V ID=-0.5A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 180 ID=-3.5A 160 1E+01 12 140 1E+00 120 1E-01 100 -IS (A) RDS(ON) (mΩ) 0.5 125°C 80 125°C 25°C 1E-02 1E-03 60 1E-04 25°C 40 1E-05 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO3435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1200 1000 Capacitance (pF) 4 -VGS (Volts) 1400 VDS=-10V ID=-3.5A 3 2 800 Ciss 600 400 1 Coss 200 0 Crss 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 10µs 1ms 10ms 0.1s 0.10 DC TJ(Max)=150°C TA=25°C 1 10 100 0.1 0.00001 1 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W TJ(Max)=150°C TA=25°C 1 -VDS (Volts) 10 20 10 1s 0.01 0.1 15 100 100µ Power (W) -ID (Amps) 1000 1.00 ZθJA Normalized Transient Thermal Resistance 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 10.00 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. 100 1000