AO4498L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4498L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! D SOIC-8 D G G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH Power Dissipation B C TC=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. ±20 V A 14 IDM 140 IAR 42 A EAR 88 mJ 3.1 PD TC=70°C Units V 18 ID TC=70°C Maximum 30 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4498L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min Typ ID=250µA, VGS=0V VDS=30V, VGS=0V 30 36.5 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 1.3 ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA VGS=10V, VDS=5V 140 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 5 VGS=10V, ID=18A TJ=125°C VGS=4.5V, ID=16A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=18A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 100 nA 2.5 V 4.6 5.5 6.6 8 6 7.5 53 1910 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=18A mΩ S V 4 A 2300 pF 316 0.7 mΩ 1 pF 227 VGS=0V, VDS=0V, f=1MHz µA A 0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Coss 1.8 Units V 1 IDSS VGS(th) Max pF 1.4 2.1 Ω 37 44.5 nC 18 nC 4.8 nC Qgd Gate Drain Charge 11 nC tD(on) Turn-On DelayTime 8.1 ns tr Turn-On Rise Time 8.6 ns 29 ns 8 ns VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=18A, dI/dt=500A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 40 17 ns nC 2 A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 0 : Jul-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4498L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 10V 120 VDS=5V 70 5V 60 100 6V 50 4V 80 ID(A) ID (A) 80 4.5V 60 40 30 40 20 VGS=3.5V 20 125° 0 0 0 1 2 3 4 0 5 1 10 3 4 5 Normalized On-Resistance 1.8 8 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 6 4 VGS=10V 2 VGS=10V ID=18A 1.6 1.4 17 5 VGS=4.5V 2 ID=16A 10 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 14 ID=18A 12 1.0E+01 40 1.0E+00 8 IS (A) 10 RDS(ON) (mΩ) 25°C 10 125°C 125°C 1.0E-01 6 1.0E-02 4 1.0E-03 25°C 25°C 1.0E-04 2 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4498L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=15V ID=18A 2500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2000 1500 1000 2 500 0 Crss 0 0 10 20 30 Qg (nC) Figure 7: Gate-Charge Characteristics 40 120 0 1000.0 100 TA=25°C 80 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10µs TA=100° 100µs 10.0 60 TA=150° 40 1ms 10ms 100ms 10s 1.0 0.1 20 30 RDS(ON) limited 100.0 ID (Amps) ID(A), Peak Avalanche Current Coss DC TJ(Max)=150°C TA=25°C TA=125° 0.0 0 0.000001 0.1 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 TJ(Max)=150°C TA=25°C Power (W) 100 10 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4498L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 40 RθJA=40°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F) Q Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4498L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg Vgs 10% Vgs td(on) tr td(off) ton tf toff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com