AOSMD AO4912

AO4912
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
Q1
The AO4912 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4912 is Pb-free (meets ROHS &
Sony 259 specifications). AO4912L is a Green Product
ordering option. AO4912 and AO4912L are electrically
identical.
Q2
VDS (V) = 30V
ID = 8.5A
RDS(ON) < 17mΩ
RDS(ON) < 25mΩ
VDS(V) = 30V
ID=7A
(VGS = 10V)
<26mΩ
(VGS = 10V)
<31mΩ
(VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<[email protected]
D1
D2
D2
G1
S1/A
1
2
3
4
8
7
6
5
G2
D1/S2/K
D1/S2/K
D1/S2/K
K
TA=25°C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
Parameter
Reverse Voltage
VGS
ID
IDM
PD
TJ, TSTG
Symbol
VDS
B
TA=70°C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
S2
Max Q1
30
Max Q2
30
Units
V
±20
±12
V
8.5
6.8
7
6.4
A
40
30
2
2
1.28
-55 to 150
1.28
-55 to 150
Maximum Schottky
30
W
°C
Units
V
3
TA=25°C
TA=70°C
TA=25°C
Power Dissipation
G2
S1
Gate-Source Voltage
Continuous Drain
TA=25°C
A
Current
TA=70°C
Pulsed Drain Current B
A
A
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Pulsed Diode Forward Current
Q2
Q1
SOIC-8
Continuous Forward
A
Current
D2
IF
2.2
IFM
20
PD
TJ, TSTG
2
1.28
-55 to 150
A
W
°C
AO4912
Parameter: Thermal Characteristics MOSFET Q1
A
t ≤ 10s
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Symbol
Parameter: Thermal Characteristics MOSFET Q2
A
t ≤ 10s
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Symbol
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
RθJA
RθJL
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
Units
Typ
48
74
35
Max
62.5
110
40
Units
47.5
71
32
62.5
110
40
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 4: Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
°C/W
°C/W
°C/W
AO4912
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
30
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
25
TJ=55°C
VGS=10V, ID=7.0A
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=6.0A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=7A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery time
Qrr
Body Diode Reverse Recovery charge
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=7.0A
1
5
1.5
µA
100
nA
2
V
A
20
26
31.6
38
24.3
31
22
0.78
590
VGS=0V, VDS=15V, f=1MHz
Max Units
V
0.003
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
mΩ
S
1
V
3
A
710
pF
162
pF
40
pF
0.45
0.6
Ω
6.04
7.3
nC
1.46
nC
2.56
nC
3.7
5.5
ns
3.5
5.5
ns
14.9
22
ns
2.5
4
ns
IF=7A, dI/dt=100A/µs
21.2
26
ns
IF=7A, dI/dt=100A/µs
14.2
21
nC
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10V
3.5V
25
3V
ID(A)
ID (A)
20
VDS=5V
16
4.5V
15
10
VGS=2.5V
12
8
125°C
4
5
0
0
0
1
2
3
4
0
5
0.5
30
1.5
2
2.5
3
3.5
1.8
Normalized On-Resistance
28
RDS(ON) (mΩ)
1
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4.5V
26
24
22
VGS=10V
20
18
16
0
5
10
15
20
ID=7A
1.6
VGS=10V
VGS=4.5V
1.4
1.2
1
0.8
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
70
1.0E+01
60
1.0E+00
ID=7A
125°C
1.0E-01
50
40
IS (A)
RDS(ON) (mΩ)
25°C
125°C
30
1.0E-02
1.0E-03
25°C
25°C
1.0E-04
20
1.0E-05
10
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
750
5
VDS=15V
ID=7A
Ciss
Capacitance (pF)
VGS (Volts)
4
f=1MHz
VGS=0V
3
2
1
500
Coss
250
Crss
0
0
1
2
3
4
5
0
6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
40
100µs
1ms
10.0
ID (A)
10ms
0.1s
1.0
TJ(Max)=150°C
TA=25°C
30
10µs
Power (W)
RDS(ON)
limited
TJ(Max)=150°C, TA=25°C
20
10
1s
10s
0
0.001
DC
0.1
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AO4912
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current.
by Schottky leakage)
Min
ID=250µA, VGS=0V
(Set
Typ
30
VR=30V
VR=30V, TJ=125°C
V
0.007 0.05
VR=30V, TJ=150°C
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
VGS=10V, ID=8.5A
TJ=125°C
3.2
10
mA
12
20
100
nA
1.8
3
V
13.8
17
20
24
25
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=7A
19.7
gFS
Forward Transconductance
VDS=5V, ID=8.5A
23
VSD
Diode+Schottky Forward Voltage
Maximum Body-Diode+Schottky Continuous Current
IS=1A
IS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance (FET + Schottky)
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
Max Units
0.45
971
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
mΩ
mΩ
S
0.5
V
3.5
A
1165
pF
190
pF
110
pF
0.7
0.85
Ω
19.2
23
nC
9.36
11.2
nC
2.6
nC
4.2
nC
5.2
7.5
4.4
6.5
ns
ns
17.3
25
ns
ns
tf
Turn-Off Fall Time
3.3
5
trr
Body Diode + Schottky Reverse Recovery Time
IF=8.5A, dI/dt=100A/µs
19.3
23
ns
Qrr
Body Diode + Schottky Reverse Recovery Charge
IF=8.5A, dI/dt=100A/µs
9.4
11
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given
application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a
single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and
recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 4 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
25
3.5V
4.5V
15
10
VDS=5V
20
ID(A)
20
ID (A)
30
4V
125°C
15
10
VGS=3V
25°C
5
5
0
0
0
1
2
3
4
1
5
1.5
26
RDS(ON) (mΩ)
Normalized On-Resistance
VGS=4.5V
18
3
3.5
4
180
110
0.7
1.7
22
2.5
VGS (Volts)
Figure 2: Transfer
1040Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
1.6
ID=8.5A
1.5
VGS=10V
VGS=4.5V
1.4
RGEN=3Ω
VGS=10V, VDS=15V, RL=1.8Ω, 1.3
VGS=10V
14
10
0
5
10
15
20
25
30
1.2
1.1
1
0.9
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
60
1.0E+01
125°C
1.0E+00
ID=8.5A
50
1.0E-01
40
IS (A)
RDS(ON) (mΩ)
2
30
25°C
1.0E-02
1.0E-03
FET+SCHOTTKY
125°C
20
1.0E-04
25°C
10
2
4
1.0E-05
6
8
10
VGS (Volts)
Figure 5: On resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note F)
1.0
AO4912
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=8.5A
Capacitance (pF)
VGS (Volts)
8
1250
6
4
2
f=1MHz
VGS=0V
Ciss
1000
750
500
Crss
250
0
0
4
8
12
16
0
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
100µs
1ms
10µs
30
ID (A)
10ms
0.1s
1.0
15
1040
180
110
0.7
40
Power (W)
10.0
10
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C, TA=25°C
RDS(ON)
limited
5
TJ(Max)=150°C
TA=25°C
20
VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000