AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features Q1 The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). AO4912L is a Green Product ordering option. AO4912 and AO4912L are electrically identical. Q2 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ VDS(V) = 30V ID=7A (VGS = 10V) <26mΩ (VGS = 10V) <31mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Parameter Reverse Voltage VGS ID IDM PD TJ, TSTG Symbol VDS B TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. S2 Max Q1 30 Max Q2 30 Units V ±20 ±12 V 8.5 6.8 7 6.4 A 40 30 2 2 1.28 -55 to 150 1.28 -55 to 150 Maximum Schottky 30 W °C Units V 3 TA=25°C TA=70°C TA=25°C Power Dissipation G2 S1 Gate-Source Voltage Continuous Drain TA=25°C A Current TA=70°C Pulsed Drain Current B A A G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Pulsed Diode Forward Current Q2 Q1 SOIC-8 Continuous Forward A Current D2 IF 2.2 IFM 20 PD TJ, TSTG 2 1.28 -55 to 150 A W °C AO4912 Parameter: Thermal Characteristics MOSFET Q1 A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol Parameter: Thermal Characteristics MOSFET Q2 A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol Thermal Characteristics Schottky Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State RθJA RθJL RθJA RθJL RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units Typ 48 74 35 Max 62.5 110 40 Units 47.5 71 32 62.5 110 40 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. °C/W °C/W °C/W AO4912 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 25 TJ=55°C VGS=10V, ID=7.0A TJ=125°C Static Drain-Source On-Resistance VGS=4.5V, ID=6.0A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current IS VDS=5V, ID=7A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery time Qrr Body Diode Reverse Recovery charge VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=7.0A 1 5 1.5 µA 100 nA 2 V A 20 26 31.6 38 24.3 31 22 0.78 590 VGS=0V, VDS=15V, f=1MHz Max Units V 0.003 VDS=24V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S 1 V 3 A 710 pF 162 pF 40 pF 0.45 0.6 Ω 6.04 7.3 nC 1.46 nC 2.56 nC 3.7 5.5 ns 3.5 5.5 ns 14.9 22 ns 2.5 4 ns IF=7A, dI/dt=100A/µs 21.2 26 ns IF=7A, dI/dt=100A/µs 14.2 21 nC VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4912 Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 3.5V 25 3V ID(A) ID (A) 20 VDS=5V 16 4.5V 15 10 VGS=2.5V 12 8 125°C 4 5 0 0 0 1 2 3 4 0 5 0.5 30 1.5 2 2.5 3 3.5 1.8 Normalized On-Resistance 28 RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 26 24 22 VGS=10V 20 18 16 0 5 10 15 20 ID=7A 1.6 VGS=10V VGS=4.5V 1.4 1.2 1 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 70 1.0E+01 60 1.0E+00 ID=7A 125°C 1.0E-01 50 40 IS (A) RDS(ON) (mΩ) 25°C 125°C 30 1.0E-02 1.0E-03 25°C 25°C 1.0E-04 20 1.0E-05 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4912 Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 750 5 VDS=15V ID=7A Ciss Capacitance (pF) VGS (Volts) 4 f=1MHz VGS=0V 3 2 1 500 Coss 250 Crss 0 0 1 2 3 4 5 0 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 100µs 1ms 10.0 ID (A) 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 30 10µs Power (W) RDS(ON) limited TJ(Max)=150°C, TA=25°C 20 10 1s 10s 0 0.001 DC 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4912 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current. by Schottky leakage) Min ID=250µA, VGS=0V (Set Typ 30 VR=30V VR=30V, TJ=125°C V 0.007 0.05 VR=30V, TJ=150°C IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 VGS=10V, ID=8.5A TJ=125°C 3.2 10 mA 12 20 100 nA 1.8 3 V 13.8 17 20 24 25 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=7A 19.7 gFS Forward Transconductance VDS=5V, ID=8.5A 23 VSD Diode+Schottky Forward Voltage Maximum Body-Diode+Schottky Continuous Current IS=1A IS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance (FET + Schottky) Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime Max Units 0.45 971 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8.5A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω mΩ mΩ S 0.5 V 3.5 A 1165 pF 190 pF 110 pF 0.7 0.85 Ω 19.2 23 nC 9.36 11.2 nC 2.6 nC 4.2 nC 5.2 7.5 4.4 6.5 ns ns 17.3 25 ns ns tf Turn-Off Fall Time 3.3 5 trr Body Diode + Schottky Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 19.3 23 ns Qrr Body Diode + Schottky Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 9.4 11 nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 4 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4912 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 25 3.5V 4.5V 15 10 VDS=5V 20 ID(A) 20 ID (A) 30 4V 125°C 15 10 VGS=3V 25°C 5 5 0 0 0 1 2 3 4 1 5 1.5 26 RDS(ON) (mΩ) Normalized On-Resistance VGS=4.5V 18 3 3.5 4 180 110 0.7 1.7 22 2.5 VGS (Volts) Figure 2: Transfer 1040Characteristics VDS (Volts) Fig 1: On-Region Characteristics 1.6 ID=8.5A 1.5 VGS=10V VGS=4.5V 1.4 RGEN=3Ω VGS=10V, VDS=15V, RL=1.8Ω, 1.3 VGS=10V 14 10 0 5 10 15 20 25 30 1.2 1.1 1 0.9 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 60 1.0E+01 125°C 1.0E+00 ID=8.5A 50 1.0E-01 40 IS (A) RDS(ON) (mΩ) 2 30 25°C 1.0E-02 1.0E-03 FET+SCHOTTKY 125°C 20 1.0E-04 25°C 10 2 4 1.0E-05 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note F) 1.0 AO4912 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A Capacitance (pF) VGS (Volts) 8 1250 6 4 2 f=1MHz VGS=0V Ciss 1000 750 500 Crss 250 0 0 4 8 12 16 0 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 100µs 1ms 10µs 30 ID (A) 10ms 0.1s 1.0 15 1040 180 110 0.7 40 Power (W) 10.0 10 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C, TA=25°C RDS(ON) limited 5 TJ(Max)=150°C TA=25°C 20 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000