AO5401E P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS compliant -AO5401EL is Halogen Free VDS (V) = -20V ID = -0.5 A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1Ω (VGS = -2.5V) RDS(ON) < 1.3Ω (VGS = -1.8V) ESD PROTECTED! SC89-3L Top View D D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS -20 Units V Gate-Source Voltage ±8 V VGS TA=25°C Continuous Drain Current AF -0.5 ID TA=70°C Pulsed Drain Current B Power Dissipation Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. -0.40 A -1 PD TA=70°C -0.5 -0.45 IDM TA=25°C A Steady State RθJA RθJL 0.38 0.28 0.24 0.18 -55 to 150 Typ 275 360 300 W °C Max 330 450 350 Units °C/W °C/W °C/W www.aosmd.com AO5401E Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -20 TJ=55°C 5 VDS=10V, VGS=±4.5V ±1 µA ±10 µA -0.9 V Gate Threshold Voltage VDS=VGS ID=-250µA -0.4 VGS=-4.5V, VDS=-5V -1 VGS=-4.5V, ID=-0.5A TJ=125°C 0.53 0.8 0.75 0.95 1 Ω 0.95 1.3 Ω -1 V -0.5 A 100 pF Forward Transconductance Diode Forward Voltage IS=-0.1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss 0.9 -0.66 72 VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS tD(on) Turn-On DelayTime VGS=-4.5V, VDS=-10V, RL=50Ω, RGEN=3Ω S 17 pF 9 pF 60.5 ns 150 ns 612 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-0.5A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=-0.5A, dI/dt=100A/µs 8.3 Body Diode Reverse Recovery Time Ω 0.72 VSD Output Capacitance A VGS=-2.5V, ID=-0.5A gFS Reverse Transfer Capacitance -0.5 VGS=-1.8V, ID=-0.3A VDS=-5V, ID=-0.5A Crss µΑ VDS=10V, VGS=±8V On state drain current Coss Units 1 ID(ON) Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V VGS(th) RDS(ON) Typ 436 ns 35 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev 4 : Oct 2008 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5401E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 5 -6V VDS=-5V -4.5V 4 25°C -4V 2 -3.5V 3 -ID(A) -ID (A) -10V -3V 2 125°C 1 -2.5V 1 VGS=-2.0V 0 0 0 1 2 3 4 5 0 1 1.4 3 4 5 Normalized On-Resistance 1.6 1.2 RDS(ON) (Ω ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics VGS=-1.8V 1 VGS=-2.5V 0.8 VGS=-4.5V 0.6 0.4 VGS=-1.8V 1.4 VGS=-4.5V 1.2 VGS=-2.5V 1 0.8 0 0.2 0.4 0.6 0.8 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+00 1.2 ID=-0.5A 1.1 1.0E-01 1 125°C 1.0E-02 125°C 0.8 25°C -IS (A) RDS(ON) (Ω ) 0.9 1.0E-03 0.7 0.6 1.0E-04 25°C 0.5 1.0E-05 0.4 1.0E-06 0.3 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO5401E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 5 VDS=-10V ID=-0.5A Ciss 80 Capacitance (pF) -VGS (Volts) 4 3 2 1 60 40 Coss Crss 20 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 10.00 TJ(Max)=150°C, TA=25°C 14 TJ(Max)=150°C TA=25°C 10 1.00 Power (W) -ID (Amps) 12 100µs 1ms RDS(ON) 1s limited 10s 0.10 10ms 2 0 0.0001 0.01 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=450°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 6 4 0.1s DC 8 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO5401E Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com