AOB4184 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB4184/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the 2 D PAK package, this device is well suited for high current load applications. AOB4184 and AOB4184L are electrically identical. VDS (V) =40V ID = 30 A (V GS = 10V) RDS(ON) < 10.5 mΩ (VGS = 10V) RDS(ON) < 13 mΩ (V GS = 4.5V) 100% UIS Tested! -RoHS Compliant -AOB4184L is Halogen Free TO-263 D2PAK Top View D D S G S G Bottom View S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current Units V ±20 V 30 ID IDM TC=100°C Continuous Drain A Current Maximum 40 C 24 A 120 TC=25°C 12 IDSM IAR 10 C 35 A Repetitive avalanche energy L=100uH C EAR 61 mJ Avalanche Current TC=70°C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range 2.5 TJ, TSTG A t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. W 1.6 -55 to 175 Symbol A W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient B Maximum Junction-to-Case 50 PD TC=100°C RθJA RθJC Typ 11 42 2.4 °C Max 17 50 3 Units °C/W °C/W °C/W www.aosmd.com AOB4184 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 120 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VSD IS=1A, VGS=0V Diode Forward Voltage G Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr V VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs ±100 nA 2.1 3 V 8.5 10.5 13.2 17 10 13 A mΩ mΩ 100 0.72 S 1 V 30 A 1250 1500 1800 pF 165 215 280 pF 95 135 190 pF 2 3.5 5 Ω 22 27.2 35 nC 11 13.6 18 nC 3.5 4.5 6 nC 4.5 6.4 9 nC VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs µA 5 IGSS gFS Units 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VDS=40V, VGS=0V VGS(th) RDS(ON) Typ 6.4 ns 17.2 ns 29.6 ns 16.8 ns 15 19 48 59 25 78 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0 : July 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOB4184 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 VDS= 5V 10V 100 4.5V 80 80 60 ID(A) ID (A) 4V 60 40 40 Vgs=3.5V 125°C 20 20 25°C 3V 0 0 0 1 2 3 4 5 2 2.5 14 3.5 4 4.5 Normalized On-Resistance 2 12 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics VGS=4.5V 10 VGS=10V 8 1.8 1.6 VGS=10V, 30A 1.4 VGS=4.5V, 20A 1.2 1 6 0 5 0.8 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 20 ID=20A 1.0E+01 125°C 1.0E+00 IS (A) 15 RDS(ON) (mΩ) 25 10 125°C 1.0E-01 1.0E-02 25°C 25°C 1.0E-03 5 1.0E-04 1.0E-05 0 0.0 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOB4184 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=12.5V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 1000 Coss 2 500 0 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 200 TJ(Max)=175°C, Tc=25°C 10µ 160 Power (W) 100 100µs 10 D 1ms RDS(ON) limited 1 TJ(Max)=175°C Tc=25°C 120 80 40 0 0.0001 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZθJC Normalized Transient Thermal Resistance Crss 0 30 1000 ID (Amps) Ciss 1500 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOB4184 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 90 TA=25°C 80 70 150°C 60 Power Dissipation (W) ID(A), Peak Avalanche Current 100 100°C 50 40 30 125°C 20 10 50 40 30 20 10 0 0 0.000001 0.00001 0.0001 0 0.001 25 100 125 150 175 50 40 TA=25°C 40 30 Power (W) Current rating ID(A) 75 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 20 10 30 20 10 0 0 50 75 100 125 150 175 0.01 TCASE (°C) Figure 14: Current De-rating (Note F) 10 ZθJA Normalized Transient Thermal Resistance 50 1 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOB4184 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com