AOD1N60 / AOU1N60 1.3A, 600V N-Channel MOSFET formerly engineering part number AOD9600 General Description Features The AOD1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO-252 D-PAK Top View Bottom View D VDS (V) = 600V ID = 1.3A RDS(ON) < 9Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-251 Top View D Bottom View D G S S G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=100°C Pulsed Drain Current Avalanche Current C G G S Maximium 600 Units V ±30 V TC=25°C C D 1.3 A ID IDM 0.8 IAR 1.0 A 4.0 Repetitive avalanche energy C EAR 15 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS dv/dt 30 5 45 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter TJ, TSTG 0.36 -50 to 150 W/ oC °C 300 °C Maximum Junction-to-Ambient A,G A Maximum Case-to-Sink Maximum Junction-to-Case D,F Alpha & Omega Semiconductor, Ltd. PD TL Symbol RθJA RθCS RθJC Typical 45 Maximum 55 Units - 0.5 2.3 2.8 °C/W °C/W °C/W www.aosmd.com AOD1N60 / AOU1N60 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature /∆TJ Coefficient IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 600 ID=250µA, VGS=0V 1 Gate-Body leakage current VDS=0V, VGS=±30V VDS=VGS, ID=250µA RDS(ON) gFS Static Drain-Source On-Resistance Forward Transconductance VSD IS Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA 100 nA 4.1 5 V VGS=10V, ID=0.65A 7.5 9 VDS=40V, ID=0.65A 0.9 Ω S 1 V 1 A 4 A 3 0.65 DYNAMIC PARAMETERS Ciss Input Capacitance Crss o V/ C 0.6 10 Gate Threshold Voltage Units V VDS=480V, TJ=125°C VGS(th) Output Capacitance Max VDS=600V, VGS=0V IGSS Coss Typ VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=480V, ID=1A 105 130 160 pF 12 14.5 17.5 pF 1.5 1.8 2.2 pF 2.9 3.5 5.3 Ω 6.1 8 nC 1.3 2 nC Qgd Gate Drain Charge 3.1 4 nC tD(on) Turn-On DelayTime 10 13 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=1.3A,dI/dt=100A/µs,VDS=100V Qrr Body Diode Reverse Recovery Charge IF=1.3A,dI/dt=100A/µs,VDS=100V VGS=10V, VDS=300V, ID=1A, RG=25Ω 6.7 13 ns 20 26 ns 11.5 23 ns 114 137 0.63 0.76 ns µC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO220 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=1A, VDD=150V, RG=10Ω, Starting TJ=25°C Rev0: May 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKE-50 to 175 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD1N60 / AOU1N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2.0 10 10V VDS=40V 6.5V -55°C 1.5 ID(A) ID (A) 6V 1.0 1 125°C 25°C 0.5 VGS=5.5V 0.0 0.1 0 5 10 15 20 25 30 2 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 14 3.0 Normalized On-Resistance 13 12 RDS(ON) (Ω) 4 VGS=10V 11 10 9 8 2.5 VGS=10V ID=0.5A 2.0 1.5 1.0 0.5 7 0 0.5 1 1.5 2 0.0 -100 2.5 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.2 1.0E+00 1.1 IS (A) BVDSS (Normalized) -50 1 125°C 1.0E-01 1.0E-02 25°C -50 to 175 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 o 150 200 TJ ( C) Figure 5: Break Down vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD1N60 / AOU1N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1000 VDS=480 ID=1A Ciss Capacitance (pF) VGS (Volts) 12 9 6 100 Coss 10 Crss 3 1 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 8 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 1000 10.0 RDS(ON) limited 1.0 800 100µs 600 TJ(Max)=150°C TC=25°C 1ms 0.1s 10ms DC 0.1 10 100 1000 VDS (Volts) ZθJC Normalized Transient Thermal Resistance 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 400 200 0.0 1 TJ(Max)=175°C TA=25°C Power (W) ID (Amps) 10µs In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=2.8°C/W 1 0.1 -50 to 175 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD1N60 / AOU1N60 1.4 1.2 40 Current rating ID(A) Power Dissipation (W) 50 30 20 10 1.0 0.8 0.6 0.4 0.2 0 0.0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note B) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note B) 400 TJ(Max)=175°C TA=25°C Power (W) 300 200 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Case (Note G) ZθJC Normalized Transient Thermal Resistance 10 1 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=55°C/W 0.1 PD 0.01 -50 to 175 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD1N60 / AOU1N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com