AOD484 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD484 is Pb-free (meets ROHS & Sony 259 specifications). AOD484L is a Green Product ordering option. AOD484 and AOD484L are electrically identical. VDS (V) = 30V ID = 25 A (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 10V) RDS(ON) < 23 mΩ (VGS = 4.5V) UIS Tested! TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain 25 TC=25°C G Current TC=100°C 25 ID Pulsed Drain Current Avalanche Current C C Repetitive avalanche energy L=0.3mH C TC=25°C B Power Dissipation TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B A IDM 80 IAR 15 A EAR 33 50 25 2.1 1.3 -55 to 175 mJ PD PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. Units V V RθJA RθJC Typ 17 55 2.3 W W °C Max 25 60 3 Units °C/W °C/W °C/W AOD484 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250uA, VGS=0V VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=15A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Min Typ Units 30 V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250μA VGS=10V, VDS=5V VGS=10V, ID=20A 1 80 TJ=125°C VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=100A/μs IF=20A, dI/dt=100A/μs Max 1.5 12.1 19 18.5 26 0.71 1 5 ±100 2.5 15 μA nA V A mΩ 23 mΩ 1 21 S V A 938 142 99 1.2 1220 17.5 8.4 3 4.1 5 12 19 6 21 nC nC nC nC ns ns ns ns 19 10 21 12 ns nC 1.8 pF pF pF Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows25 it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is 25more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. 60mounted to a large heatsink, assuming F. These curves are based on the junction-to-case thermal impedence which is measured with the device 30 a maximum junction temperature of T J(MAX)=175°C. 2.5 G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still1.6 air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 1: Aug. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD484 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 10V 70 20 8V VDS=5V 4.5V 60 ID(A) 50 ID (A) 15 6V 40 30 10 125°C 3.5V 25°C 5 20 VGS=3V 10 -40°C 0 0 0 1 2 3 4 0 5 0.5 1.5 2 2.5 25 Normalized On-Resistance VGS=4.5V 15 10 VGS=10V 5 0 0 4 8 12 16 3.5 500 150 60 1.6 20 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics RDS(ON) (mΩ) 1 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=15A 1 0.8 0.6 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 40 ID=20A 1.0E+00 35 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 30 125°C 25 25°C 1.0E-02 -40°C 1.0E-03 20 1.0E-04 25°C 15 1.0E-05 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD484 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 Capacitance (pF) VGS (Volts) 1200 VDS=20V ID=20A 8 6 4 Ciss 1000 800 600 Coss 400 Crss 2 200 0 0 5 10 15 0 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 10μs 10.0 100μs Power (W) 100.0 30 500 150 60 200 RDS(ON) limited ID (Amps) 5 TJ(Max)=175°C TA=25°C 120 80 1ms TJ(Max)=175°C, TA=25°C 1.0 DC 40 10ms 0 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD484 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 tA = 35 L ⋅ ID 30 BV − V DD 25 TA=25°C 20 Power Dissipation (W) ID(A), Peak Avalanche Current 40 TA=150°C 15 10 30 20 10 5 0 0 0.000001 0.00001 0.0001 0.001 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 50 75 100 30 150 175 500 150 60 40 TA=25°C 25 30 20 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note B) 15 10 20 10 5 0 0 0 25 50 75 100 125 150 0.001 175 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000