AOL1712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS (V) = 30V (VGS = 10V) ID =65A RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) -RoHS Compliant -Halogen and Antimony Free Green Device* TM Ultra SO-8 UIS Tested Rg,Ciss,Coss,Crss Tested Top View D D TM Bottom tab connected to drain S G S G Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain B, H Current Pulsed Drain Current ID C IDM Power Dissipation A C TA=25°C Junction and Storage Temperature Range D 38 A EAR 217 mJ 100 W 50 2.1 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. A IAR PDSM TA=70°C Maximum Junction-to-Case A 12 PD TC=100°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient V 80 IDSM Avalanche Current C Power Dissipation ±12 16 TA=70°C B Units V 65 TA=25°C Repetitive avalanche energy L=0.3mH TC=25°C Maximum 30 65 TC=100°C Continuous Drain A Current SRFET Soft Recovery MOSFET: Integrated Schottky Diode RθJA RθJC Typ 19.6 50 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W www.aosmd.com AOL1712 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.4 VGS=10V, VDS=5V 80 TJ=125°C VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Diode Continuous Current H DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 20 VGS=10V, VDS=15V, ID=20A ±100 nA 2.5 V 3.5 4.2 5.5 6.6 4.4 5.5 A 90 0.36 S 0.5 V 65 A 5120 pF pF 255 pF 0.72 1.1 Ω 73 95 nC nC 35 10.4 nC 12.4 nC 9.8 ns tD(on) Turn-On DelayTime Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=300A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 32 Body Diode Reverse Recovery Time mΩ 590 tr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω mA 1.8 3940 VGS=0V, VDS=15V, f=1MHz Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ 8.4 ns 45 ns ns 10 43 ns nC A: The value of R θJA is measured with the device in a still air environment with T A=25°C. The power dissipation P DSM and current rating IDSM are based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev3: July. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 100 VDS=5V 10V 80 4.5V 3.5V 60 40 ID(A) ID (A) 60 VGS=3.0V 40 125°C 20 20 25°C 0 0 0 0.5 1 1.5 2 2.5 3 1 1.5 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 5 4 Normalized On-Resistance 1.9 VGS=4.5V 4.5 RDS(ON) (mΩ ) 2 4 VGS=10V 3.5 3 ID=20A 1.7 VGS=10V 1.5 VGS=4.5V 1.3 1.1 0.9 0.7 0 5 10 15 20 25 30 -40 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 10 35 60 85 110 135 160 185 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 12 100 10 10 8 1 125°C IS (A) RDS(ON) (mΩ ) ID=20A 125°C 6 0.1 25°C 4 0.01 25°C 2 0.001 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Ciss Capacitance (nF) VGS (Volts) 8 6 4 2 4000 3000 2000 Coss Crss 1000 0 0 0 10 20 30 40 50 60 70 80 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10000 TJ(Max)=175°C TC=25°C 100µs RDS(ON) limited 10.0 Power (W) ID (Amps) 1ms 10ms 100ms 1000 100 DC TJ(Max)=175°C TC=25°C 1.0 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) ID(A), Peak Avalanche Current 100 80 TC=25°C 60 40 100 80 60 40 20 0 20 1.0E-06 1.0E-05 1.0E-04 0 1.0E-03 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 80 100 TJ(Max)=150°C TA=25°C 80 60 Power (W) Current rating ID(A) 25 40 60 40 20 20 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1712 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com