AOSMD AON2701

AON2701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AON2701/L uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch, or
for DC-DC conversion applications.
AON2701 and AON2701L are electrically identical.
-RoHS Compliant
-Halogen Free*
VDS (V) = -20V
(VGS = -4.5V)
ID = -3A
RDS(ON) < 120mΩ (VGS = -4.5V)
RDS(ON) < 160mΩ (VGS = -2.5V)
RDS(ON) < 200mΩ (VGS = -1.8V)
SCHOTTKY
VKA (V) = 20V, IF = 2A, VF<[email protected]
DFN 2x2 Package
A
NC
K
D
D
A
S
K
D
G
K
G
Bottom
Top
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
A
TA=70°C
Continuous Drain Current
Pulsed Drain Current
B
IDM
TA=25°C
Continuous Forward CurrentA
TA=70°C
B
Power Dissipation
TA=70°C
±8
-3
V
-2.3
A
-15
IF
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-AmbientA
A
Maximum Junction-to-Ambient
Thermal Characteristics Schottky
Steady-State
Maximum Junction-to-AmbientA
A
Maximum Junction-to-Ambient
t ≤ 10s
Steady-State
Alpha & Omega Semiconductor, Ltd.
PD
TJ, TSTG
Symbol
RθJA
RθJA
Units
V
IFM
TA=25°C
Schottky
-20
VKA
Schottky reverse voltage
Pulsed Forward Current
ID
MOSFET
20
2.5
V
1.5
A
15
1.5
1.45
0.95
0.92
-55 to 150
-55 to 150
°C
Typ
Max
Units
35
45
65
85
36
47
67
87
W
°C/W
°C/W
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AON2701
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
TJ=55°C
±100
nA
-0.5
-1
V
100
120
135
170
VGS=-2.5V, ID=-2.6A
128
160
mΩ
VGS=-1.8V, ID=-1.5A
160
200
mΩ
-1
V
-1.1
A
700
pF
Gate-Body leakage current
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-15
VGS=-4.5V, ID=-3A
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-3A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
A
6
-0.76
540
VGS=0V, VDS=-10V, f=1MHz
mΩ
S
90
pF
63
pF
VGS=0V, VDS=0V, f=1MHz
9.5
13
Ω
5
6.5
nC
VGS=-4.5V, VDS=-10V, ID=-3A
1.2
nC
1
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Body Diode Reverse Recovery Time
IF=-3A, dI/dt=100A/µs
21
Qrr
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs
9.1
VGS=-4.5V, VDS=-10V, RL=1.5Ω,
RGEN=3Ω
5
ns
40
ns
28.5
ns
46
Turn-Off Fall Time
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
Units
µΑ
-5
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IGSS
RDS(ON)
Typ
IF=1A
0.4
VR=5V
VR=5V, TJ=125°C
ns
28
ns
nC
0.45
V
0.05
Irm
Maximum reverse leakage current
Irm
Maximum reverse leakage current
CT
trr
Junction Capacitance
VR=10V
Schottky Reverse Recovery Time
IF=1A, dI/dt=100A/µs
11
Qrr
Schottky Reverse Recovery Charge
IF=1A, dI/dt=100A/µs
2.5
10
0.1
VR=16V
VR=16V, TJ=125°C
mA
mA
20
53
pF
14
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 7111 (Oct 15 2007).
Rev4: Sep, 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AON2701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: MOSFET
15
15
VDS=-5V
-4.5V
-3.0V
12
25°C
-2.5V
9
-ID(A)
-ID (A)
12
-2.0V
6
9
125°C
6
3
3
VGS=-1.5V
0
0
0
1
2
3
4
0
1
-VDS (Volts)
Figure 1: On-Region Characteristics
3
4
1.5
Normalized On-Resistance
280
240
RDS(ON) (mΩ )
2
-VGS(Volts)
Figure 2: Transfer Characteristics
VGS=-1.8V
200
VGS=-2.5V
160
120
VGS=-4.5V
80
VGS=-1.8V
ID=-1.5A
VGS=-2.5V
ID=-2.6A
1.3
VGS=-4.5V
ID=-3A
1.1
0.9
0.7
0
2
4
6
8
10
-50
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-15
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
320
ID=-3A
280
1E+00
240
1E-01
-IS (A)
RDS(ON) (mΩ )
12
200
125°C
160
120
125°C
1E-02
25°C
1E-03
1E-04
25°C
80
1E-05
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON2701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: MOSFET
5
800
VDS=-10V
ID=-3A
700
3
2
Ciss
600
Capacitance (pF)
-VGS (Volts)
4
500
400
300
Crss
Coss
200
1
100
0
0
0
1
2
3
4
5
0
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
ID (Amps)
10.00
100µ
1.00
1ms
RDS(ON)
limited
DC
10ms
0.1s
10s
10
100
Zθ JA Normalized Transient
Thermal Resistance
1
0.01
1
100
10000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-15
to-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=85°C/W
100
1
0.000001 0.0001
VDS (Volts)
10
TJ(Max)=150°C
TA=25°C
10
0.01
1
20
1000
10µs
0.1
15
10000
TJ(Max)=150°C
TA=25°C
0.10
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
100.00
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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AON2701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
200
160
125°C
Capacitance (pF)
IF (Amps)
1
0.1
25°C
0.01
120
80
40
0
0.001
0
0.2
0.4
0.6
0.8
1
0
1.2
10
15
20
10
0.42
Leakage Current (mA)
0.39
IF=1A
0.36
VF (Volts)
5
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
VF (V)
Figure 12: Schottky Forward Characteristics
0.33
IF=0.5A
0.30
1
VKA=20V
VKA=16V
0.1
0.27
0.24
0.01
0
25
50
75
100
125
150
0
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=87°C/W
-15
25
50
75
100
125
Temperature (°C)
Figure 15: Schottky Leakage Current vs.
Junction Temperature
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
0.01
PD
Ton
0.001
T
Single Pulse
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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AON2701
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveform s
RL
Vds
t off
t on
td(on)
Vgs
-
D UT
Vgs
t d(off)
tr
90%
Vdd
VDC
tf
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & W aveform s
Q rr = - Idt
Vds +
D UT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I R M
Vdd
VD C
-
-I F
-Vds
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