AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AON2701 and AON2701L are electrically identical. -RoHS Compliant -Halogen Free* VDS (V) = -20V (VGS = -4.5V) ID = -3A RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 2A, VF<0.45V@1A DFN 2x2 Package A NC K D D A S K D G K G Bottom Top S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C A TA=70°C Continuous Drain Current Pulsed Drain Current B IDM TA=25°C Continuous Forward CurrentA TA=70°C B Power Dissipation TA=70°C ±8 -3 V -2.3 A -15 IF Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient Thermal Characteristics Schottky Steady-State Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient t ≤ 10s Steady-State Alpha & Omega Semiconductor, Ltd. PD TJ, TSTG Symbol RθJA RθJA Units V IFM TA=25°C Schottky -20 VKA Schottky reverse voltage Pulsed Forward Current ID MOSFET 20 2.5 V 1.5 A 15 1.5 1.45 0.95 0.92 -55 to 150 -55 to 150 °C Typ Max Units 35 45 65 85 36 47 67 87 W °C/W °C/W www.aosmd.com AON2701 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C ±100 nA -0.5 -1 V 100 120 135 170 VGS=-2.5V, ID=-2.6A 128 160 mΩ VGS=-1.8V, ID=-1.5A 160 200 mΩ -1 V -1.1 A 700 pF Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 VGS=-4.5V, ID=-3A TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-3A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 6 -0.76 540 VGS=0V, VDS=-10V, f=1MHz mΩ S 90 pF 63 pF VGS=0V, VDS=0V, f=1MHz 9.5 13 Ω 5 6.5 nC VGS=-4.5V, VDS=-10V, ID=-3A 1.2 nC 1 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 9.1 VGS=-4.5V, VDS=-10V, RL=1.5Ω, RGEN=3Ω 5 ns 40 ns 28.5 ns 46 Turn-Off Fall Time SCHOTTKY PARAMETERS VF Forward Voltage Drop Units µΑ -5 VGS(th) Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ IF=1A 0.4 VR=5V VR=5V, TJ=125°C ns 28 ns nC 0.45 V 0.05 Irm Maximum reverse leakage current Irm Maximum reverse leakage current CT trr Junction Capacitance VR=10V Schottky Reverse Recovery Time IF=1A, dI/dt=100A/µs 11 Qrr Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs 2.5 10 0.1 VR=16V VR=16V, TJ=125°C mA mA 20 53 pF 14 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 7111 (Oct 15 2007). Rev4: Sep, 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON2701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: MOSFET 15 15 VDS=-5V -4.5V -3.0V 12 25°C -2.5V 9 -ID(A) -ID (A) 12 -2.0V 6 9 125°C 6 3 3 VGS=-1.5V 0 0 0 1 2 3 4 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 3 4 1.5 Normalized On-Resistance 280 240 RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics VGS=-1.8V 200 VGS=-2.5V 160 120 VGS=-4.5V 80 VGS=-1.8V ID=-1.5A VGS=-2.5V ID=-2.6A 1.3 VGS=-4.5V ID=-3A 1.1 0.9 0.7 0 2 4 6 8 10 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 320 ID=-3A 280 1E+00 240 1E-01 -IS (A) RDS(ON) (mΩ ) 12 200 125°C 160 120 125°C 1E-02 25°C 1E-03 1E-04 25°C 80 1E-05 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON2701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: MOSFET 5 800 VDS=-10V ID=-3A 700 3 2 Ciss 600 Capacitance (pF) -VGS (Volts) 4 500 400 300 Crss Coss 200 1 100 0 0 0 1 2 3 4 5 0 6 Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) 10.00 100µ 1.00 1ms RDS(ON) limited DC 10ms 0.1s 10s 10 100 Zθ JA Normalized Transient Thermal Resistance 1 0.01 1 100 10000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-15 to-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=85°C/W 100 1 0.000001 0.0001 VDS (Volts) 10 TJ(Max)=150°C TA=25°C 10 0.01 1 20 1000 10µs 0.1 15 10000 TJ(Max)=150°C TA=25°C 0.10 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 100.00 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON2701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 200 160 125°C Capacitance (pF) IF (Amps) 1 0.1 25°C 0.01 120 80 40 0 0.001 0 0.2 0.4 0.6 0.8 1 0 1.2 10 15 20 10 0.42 Leakage Current (mA) 0.39 IF=1A 0.36 VF (Volts) 5 VKA (Volts) Figure 13: Schottky Capacitance Characteristics VF (V) Figure 12: Schottky Forward Characteristics 0.33 IF=0.5A 0.30 1 VKA=20V VKA=16V 0.1 0.27 0.24 0.01 0 25 50 75 100 125 150 0 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=87°C/W -15 25 50 75 100 125 Temperature (°C) Figure 15: Schottky Leakage Current vs. Junction Temperature 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 0.01 PD Ton 0.001 T Single Pulse 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON2701 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & W aveform s RL Vds t off t on td(on) Vgs - D UT Vgs t d(off) tr 90% Vdd VDC tf + Rg Vgs 10% Vds Diode Recovery Test Circuit & W aveform s Q rr = - Idt Vds + D UT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I R M Vdd VD C - -I F -Vds www.aosmd.com