AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS (V) = 30V (V GS = 10V) ID = 12A RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) - RoHS Compliant. - Halogen Free DFN 3x3 Top View Bottom View Pin 1 D S S S G D D D D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,H TC=100°C Continuous Drain Current G TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case D Alpha & Omega Semiconductor, Ltd. ±12 V 20 ID IDM A 80 TA=25°C TA=70°C Units V 20 TC=25°C Pulsed Drain Current C Maximum 30 12 IDSM 11 33 PD 13 PDSM 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 3.1 RθJA RθJC Typ 30 60 3.1 °C Max 40 75 3.7 Units °C/W °C/W °C/W www.aosmd.com AON7700 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 100 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=55°C VGS=10V, ID=12A TJ=125°C Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr 3 V 6.7 8.5 A 10 VDS=5V, ID=12A 27 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 1.7 12 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Coss nA 8 VSD 0.39 3395 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=10A VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs mΩ S 0.5 V 6 A 4250 pF 490 pF 185 pF 1 1.5 25 33 Ω nC 9.5 nC 8.4 nC 11 ns 16 ns 38 ns 21 IF=12A, dI/dt=100A/µs µA 100 9 Forward Transconductance IS 500 VGS=4.5V, ID=10A gFS Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 IDSS RDS(ON) Typ 28 ns 36 15 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating I DSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. 150 E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. Rev0: September 2007 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 40 10V 4.5V 3.5V 60 VDS=5V 35 30 5V ID(A) ID (A) 25 3V 40 125°C 20 15 20 25°C 10 VGS=2.5V 5 0 -40°C 0 0 1 2 3 4 5 1 VDS (Volts) Figure 1: On-Region Characteristics 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 9 1.6 Normalized On-Resistance 8.5 VGS=4.5V RDS(ON) (mΩ) 1.5 8 7.5 7 V =10V ` GS 6.5 VGS=10V ID=12A 1.4 VGS=4.5V ID=10A 1.2 1 0.8 6 0 5 10 15 20 0.6 -60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -30 0 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 10 ID=12A 150 25 15 IS (A) RDS(ON) (mΩ) 1 125°C 20 125°C 10 0.1 25°C 25°C 0.01 5 -40°C -40°C 0.001 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON7700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000 10 VDS=15V ID=12A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 4000 3000 2000 1000 0 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0 60 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100 10µs RDS(ON) limited TJ(Max)=150°C TA=25°C 800 Power (W) ID (Amps) Coss Crss 50µs 10 100µs DC TJ(Max)=150°C TC=25°C 1 10 400 200 500µs 0 0.00001 1 0.1 600 100 0.001 0.1 10 1000 VDS (Volts) Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note G) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com