AOSMD AOTF470

AOTF470
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOTF470 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
-RoHs Compliant
VDS (V) = 75V
ID= 50 A
(VGS= 10V)
RDS(ON) < 11.5mΩ (VGS = 10V)
D
G
AOTF470
TO-220F
G D S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
C
C
Repetitive avalanche energy L=0.3mH
C
TC=25°C
TC=100°C
Junction and Storage Temperature Range
Power Dissipation B
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case B
A
Alpha & Omega Semiconductor, Ltd.
Units
V
±25
V
50
TC=100°C
Pulsed Drain Current
Avalanche Current
AOTF470
75
A
ID
IDM
200
IAR
45
A
EAR
300
mJ
36
PD
TJ, TSTG
Symbol
RθJA
RθJC
54
27
-55 to 175
°C
AOTF470
Units
60
2.8
°C/W
°C/W
W
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AOTF470
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
ID=250uA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±25V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
Static Drain-Source On-Resistance
gFS
VDS=5V, ID=50A
Transconductance
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
uA
V
9.8
11.5
16.0
19.0
A
90
0.7
VGS=10V, VDS=30V, ID=30A
VGS=10V, VDS=30V, RL=1Ω,
RGEN=3Ω
mΩ
1
S
V
20
A
5640
pF
400
pF
180
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Gate Drain Charge
1
4
4700
VGS=0V, VDS=30V, f=1MHz
Coss
µA
2.7
200
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Qgd
5
2
Units
V
1
VGS=10V, ID=30A
RDS(ON)
Max
75
TJ=55°C
IGSS
VSD
Typ
VDS=60V, VGS=0V
VGS(th)
IS
Min
pF
3
4.5
Ω
114
140
nC
33
nC
18
nC
21
ns
39
ns
70
ns
24
ns
trr
Body Diode Reverse Recovery Time
IF=30A, dI/dt=100A/µs
53
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
143
70
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev0: Feb. 2009
o
Derate above 25 C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOTF470
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
250
10V
8V
200
VDS=5V
80
6V
60
ID(A)
ID (A)
150
5.5V
100
125°C
40
25°C
50
20
VGS=4.5V
-40°C
0
0
0
2
4
6
8
10
3
3.5
VDS (Volts)
Figure 1: On-Region Characteristics
4.5
5
5.5
6
VGS(Volts)
Figure 2: Transfer Characteristics
2
12
1.8
Normalized On-Resistance
13
11
RDS(ON) (mΩ)
4
10
VGS=10V
9
8
7
1.6
VGS=10V, 30A
1.4
1.2
1
0.8
6
0
20
40
60
80
0.6
100
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-25
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
30
ID=30A
25
1.0E+01
20
1.0E+00
125°C
Derate above 25oC
15
IS (A)
RDS(ON) (mΩ)
125°C
1.0E-01
25°C
1.0E-02
10
25°C
1.0E-03
-40°C
5
1.0E-04
0
0.0
4
8
12
16
20
VGS (Volts)
AOT430
Figure 5: On-Resistance vs.
Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOTF470
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10
VDS=30V
ID=30A
Ciss
Capacitance (nF)
VGS (Volts)
8
6
4
1
Coss
Crss
0.1
2
0.01
0
0
40
80
120
ID(A), Peak Avalanche Current
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
150
TA=25°C
125
100
75
TA=150°C
50
25
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 9: Single Pulse Avalanche capability
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AOTF470
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
Power Dissipation (W)
Current rating ID(A)
50
40
30
20
10
50
40
30
20
10
0
0
0
25
50
75
100
125
150
0
175
25
75
100
125
150
TCASE (°C)
Figure 11: Power De-rating (Note B)
TCASE (°C)
Figure 10: Current De-rating (Note B)
1000
50
175
TJ(Max)=175°C, TA=25°C
10µs
ID (Amps)
100
100µs
RDS(ON) limited
10
1ms
10ms
100ms
1s
10s
D
1
0.1
0.1
1
10
100
1000
VDS (Volts)
Figure 12: Maximum Forward Biased Safe Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.8°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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