AOZ9006DIL Single-Cell Battery Protection IC with Integrated MOSFET General Description Features The AOZ9006DIL is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage detectors and delay circuits, and is suitable for protecting single-cell lithium-ion / lithium-polymer rechargeable battery packs from overcharge, over-discharge, and over-current conditions. ● Integrated Common-Drain N-Channel MOSFET ◗ 48mΩ (max.) source to source on resistance ● The AOZ9006DIL is available in a 2mm x 5mm 6-pin DFN package and is rated over a -40°C to +85°C ambient temperature range. ● ● ● ● ● High-accuracy voltage detection circuit ◗ Overcharge detection accuracy ±25mV (+25°C), ±30mV (-5°C to +55°C) ◗ Overcharge release accuracy ±50mV ◗ Over-discharge detection accuracy ±50mV ◗ Over-discharge release accuracy ±100mV ◗ Discharge over-current detection accuracy ±15mV ◗ Load short-circuit detection accuracy ±200mV ±20% accurate internal detection delay times (external capacitors are unnecessary) Charger connection pin withstands up to 28V Wide operating temperature range -40°C to +85°C Low current consumption ◗ 3.0µA (typ.), 5.5µA (max.) in operation mode at +25°C Small 2mm X 5mm 6-pin DFN package Applications ● ● Lithium-ion rechargeable battery packs Lithium-polymer rechargeable battery packs RoHS Compliant Typical Application 1 C1 0.1µF EB+ DO VSS EB- OUTM AOZ9006DIL OUTM VDD R2 2kΩ VM R1 220Ω Figure 1. Typical Application Rev. 1.0 August 2008 www.aosmd.com Page 1 of 15 AOZ9006DIL Ordering Information Part Number Overcharge Detection Voltage (VCU) Overcharge Release Voltage (VCL) Overdischarge Detection Voltage (VDL) AOZ9006DIL 4.275V 4.175V 2.3V Overdischarge Release Voltage (VDU) Discharge Overcurrent Threshold (VDIOV)* Load Shortcircuiting Detection Voltage (VSHORT) Charge Overcurrent Threshold (VCIOV)* 0V Battery Charge Function Shutdown Function 2.4V 0.10V 0.5V –0.10V Yes Yes *Please refer to page 8 for calculation of charge and discharge current limits. All AOS products are offered in packages with Pb-free plating and compliant to RoHS standards. • Parts marked as Green Products (with “L” suffix) use reduced levels of Halogens, and are also RoHS compliant. Please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information. Table 1. Delay Time Combination Overcharge Detection Delay Time (tCU) Over-discharge Detection Delay Time (tDL) Discharge Over-current Detection Delay Time (tDIOV) Charge Over-current Detection Delay Time (tCIOV) Load Short-circuiting Detection Delay Time (tSHORT) 1.2s 150ms 9ms 9ms 300µs Pin Configuration DO 1 VSS 2 VDD 3 PAD 6 OUTM 5 OUTM 4 VM 2x5 DFN-6 (Top View) Pin Description Pin Name Pin Name DO 1 Discharge MOSFET Gate. This pad is for test purposes only. Always leave this pad unconnected. VSS 2 Ground. VSS is the source of the internal Discharge MOSFET. Connect VSS directly to the cathode of lithium-ion/lithium polymer battery cell. VDD 3 Input supply pin. Connect a 0.1µF capacitor between VDD and VSS. VM 4 Over-current/Charger Detection Pin. Connect a 2kΩ resistor between VM and the negative terminal of the battery pack. OUTM 5, 6 Output pin. OUTM is the source of the internal Charge MOSFET. Connect OUTM directly to the negative terminal of the battery pack. PAD Drain Rev. 1.0 August 2008 Pin Function MOSFET Common-Drain Connection. This pad is for test purposes only. Always leave this pad unconnected. www.aosmd.com Page 2 of 15 AOZ9006DIL Block Diagram EB+ R1 220Ω Single-Cell Lithium-Ion/ Lithium-Polymer Battery VDD OverDischarge Comp Oscillator Counter/ Logic 0V Battery Charge Function VDD C1 0.1µF Over-Charge Comp VSS Charge Detection Discharge Over-Current Comp RVMD VM Charge Over-Current Comp RVMS Short-Circuit Comp R2 2kΩ Battery Protection IC DO CO Discharge FET Charge FET OUTM EB- Dual Common-Drain MOSFET AOZ9006DIL Figure 1. AOZ9006DIL Function Block Diagram Absolute Maximum Ratings Exceeding the Absolute Maximum ratings may damage the device. Ratings Symbol Parameter Conditions Min. Max. Unit VDD Supply Voltage –0.3 12 V VM VM Pin Voltage VDD – 28 VDD + 0.3 V 30 V VDSS Drain-Source Voltage ID Current(1) Drain TOPR Operating Temperature TSTD Storage Temperature PD Total Power Dissipation(1) RθJA = 84°C/W, TA = RθJA = 84°C/W, TA = 25oC 25oC 4.1 A –40 85 °C –55 125 °C 1.0 W Note: 1. The value of RθJA is measured with the device mounted on 1-in2 FR-4 board with 2-oz. copper, in a still air environment with TA = 25°C. The value in any given application depends on the user’s specific board design. Rev. 1.0 August 2008 www.aosmd.com Page 3 of 15 AOZ9006DIL Electrical Characteristics TA = 25°C unless otherwise specified. Parameters specified over TA = -40°C to +85°C are guaranteed by design only and not production tested. Control IC Symbol Parameter Condition Min. Typ. Max. Unit TA = 25°C 4.250 4.275 4.300 V TA = –5°C to +55°C 4.245 4.275 4.305 TA = –40°C to +85°C 4.215 4.275 4.315 4.225 DETECTION VOLTAGE VCU Overcharge Detection Voltage VCL Overcharge Release Voltage TA = 25°C 4.125 4.175 TA = –40°C to +85°C 4.095 4.175 4.24 VDL Over-Discharge Detection Voltage TA = 25°C 2.250 2.300 2.350 TA = –40°C to +85°C 2.190 2.300 2.430 VDU VDIOV Over-Discharge Release Voltage Discharge Over-Current Threshold VSHORT Load Short-Circuiting Detection Voltage VCIOV Charge Over-Current Threshold TA = 25°C 2.300 2.400 2.500 TA = –40°C to +85°C 2.250 2.400 2.590 TA = 25°C 0.085 0.100 0.115 TA = –40°C to +85°C 0.079 0.100 0.124 0.3 0.50 0.7 TA = 25°C TA = –40°C to +85°C 0.16 0.50 0.84 TA = 25°C -0.13 -0.1 -0.07 TA = –40°C to +85°C -0.14 -0.1 -0.06 V V V V V V 0 V BATTERY CHARGE FUNCTION V0CHA 0V battery charge starter battery voltage (0V battery charging function “available”) TA = 25°C 1.2 TA = –40°C to +85°C 1.7 V INPUT VOLTAGE VDSOP1 Operating Voltage Between VDD Pin and VSS Pin Internal Circuit Operating Voltage 1.5 8 V VDSOP2 Operating Voltage Between VDD Pin and VM Pin Internal Circuit Operating Voltage 1.5 28 V µA INPUT CURRENT (Shutdown Function) IOPE IPDN Current Consumption During Operation Current Consumption at Shutdown VDD = 3.5V, VVM = 0V, TA = 25°C 1.0 3.0 5.5 VDD = 3.5V, VVM = 0V, TA = –40°C to +85°C 0.7 3.0 6.0 VDD = VVM = 1.5V, TA = 25°C 0.2 VDD = VVM = 1.5V, TA = –40°C to +85°C 0.3 µA Internal Resistance RVMD Resistance Between VM Pin and VDD Pin RVMS Resistance Between VM Pin and VSS Pin Rev. 1.0 August 2008 VDD = 1.8V, VVM = 0V, TA = 25°C 100 300 900 VDD = 1.8V, VVM = 0V, TA = –40°C to +85°C 78 300 1310 VDD = 3.5V, VVM = 1.0V, TA = 25°C 10 20 40 VDD = 3.5V, VVM = 1.0V, TA = –40°C to +85°C 7.2 20 44 www.aosmd.com kΩ kΩ Page 4 of 15 AOZ9006DIL Electrical Characteristics (Continued) TA = 25°C unless otherwise specified. Parameters specified over TA = -40°C to +85°C are guaranteed by design only and not production tested. Control IC (Continued) Symbol Parameter Condition Min. Typ. Max. Unit s Detection Delay Time tCU tDL tDIOV tCIOV tSHORT Overcharge Detection Delay Time Over-Discharge Detection Delay Time Discharge Over-Current Detection Delay Time Charge Over-Current Detection Delay Time Load Short-Circuiting Detection Delay Time TA = 25°C .96 1.2 1.4 TA = –40°C to +85°C 0.7 1.2 2 TA = 25°C 120 150 180 TA = –40°C to +85°C 83 150 255 TA = 25°C 7.2 9 11 5 9 15 TA = –40°C to +85°C TA = 25°C 7.2 9 11 5 9 15 TA = 25°C 240 300 360 TA = –40°C to +85°C 150 300 540 Min. Typ. Max. TA = –40°C to +85°C ms ms ms ms Integrated MOSFET: Symbol Parameter Condition BVDS_C Charge Control MOSFET Drain-Source Breakdown VDD = VCU ILEAK_C Charge Control MOSFET Leakage VDD = VCU BVDS_D Discharge Control MOSFET Drain-Source Breakdown Voltage VDD = VDL ILEAK_D Discharge Control MOSFET Leakage Current VDD = VDL Total Output Resistance (OUTM to VSS) VDD = 3.5V, IOUT = 1.5A RSS Rev. 1.0 August 2008 www.aosmd.com 30 V 1 30 32 Unit µA V 40 1 µA 48 mΩ Page 5 of 15 AOZ9006DIL Typical Performance Characteristics Transfer Characteristics On-Regions Characteristics 20 30 V DS = 5V 3.5V 15 20 ID(A) ID(A) V GS = 2.5V 10 125°C V GS = 2V 10 5 25°C 0 0 1 2 3 4 0 5 0.0 0.5 1.0 V DS(Volts) 2.0 2.5 V GS(Volts) On-Resistance vs. Drain Current and Gate Voltage On-Resistance vs. Junction Temperature 1.6 Normalize ON-Resistance 80 V DD = 2.5V 70 60 RSS(ON)(m Ω ) 1.5 V DD = 4.5V 50 40 30 20 1.4 V DD=4.5V 1.2 V DD=2.5V 1.0 0.8 10 0 0 5 10 15 0.6 -50 -25 20 0 25 ID (A) 75 100 125 150 175 Tem perature (°C) Body-Diode Characteristics On-Resistance vs. Gate-Source Voltage 60 1E+01 1E+00 50 1E-01 40 125°C IS(A) RSS(ON)(m Ω ) 50 125°C 1E-02 30 1E-03 20 25°C 25°C 1E-04 1E-05 10 1 2 3 4 5 6 7 8 9 10 0.2 0.4 0.6 0.8 1.0 V SD (Volts) V DD (Volts) Rev. 1.0 August 2008 0.0 www.aosmd.com Page 6 of 15 AOZ9006DIL Theory of Operation Please refer to the Timing Diagrams for more information. Normal Status The AOZ9006DIL monitors the voltage between the VDD pin and VSS pin and the voltage difference between the VM pin and VSS pin to control charging and discharging. Since the device only draws a few microamperes of current during operation and the voltage drop across the low-pass filter R1 is negligible, the voltage between VDD and VSS is equal to the battery voltage. When the battery voltage is in the range between over-discharge detection voltage (VDL) and overcharge detection voltage (VCU), and the VM pin voltage is in the range between the charge over-current detection voltage (VCIOV) and discharge over-current detection voltage (VDIOV), the IC turns both the charging and discharging control FETs on. In this normal status, charging and discharging can be carried out freely. Caution: Products with “Shut-down Function Available” feature may not enable discharging when the battery is connected for the first time. Connect the charger or short VM pin to VSS can restore the normal status. Overcharge Status When the battery voltage rises higher than overcharge detection voltage (VCU) for the overcharge detection delay time (tCU) or longer in the normal status, the AOZ9006DIL turns off the charging control MOSFET to stop charging. This condition is the overcharge status. The resistance (RVMD) between the VM pin and VDD pin, and the resistance (RVMS) between the VM pin and VSS pin are not connected. The overcharge status is released in the following two cases: 1. When the battery voltage falls below overcharge release voltage (VCL) and VM pin voltage is higher than -0.7V (Typ.) (charger is removed), the AOZ9006DIL turns on the charging control MOSFET and returns to the normal status. 2. When a load is connected and battery voltage is below overcharge detection voltage (VCU), the AOZ9006DIL turns on the charging control MOSFET and returns to the normal status. Caution: When both charger and load are connected after overcharge detection, charging control FET still remains off and a portion of the load current may flow through body diode of charging control FET if the charger can not supply the full load current. This condition may overheat the charging control FET. Please refer to the Typical Characteristics for more information. Rev. 1.0 August 2008 Over-Discharge Status When the battery voltage falls below over-discharge detection voltage (VDL) for the over-discharge detection delay time (tDL) or longer, the IC turns off the discharging control MOSFET to stop discharging. This condition is the over-discharge status. Under the over-discharge status, the VM pin voltage is pulled up by the resistor between the VM pin and VDD pin in the IC (RVMD). The resistance (RVMS) between the VM pin and VSS pin is not connected in the over-discharge status. When voltage difference between the VM pin and VDD pin is 1.3V (Typ.) or lower, the productions with “Shut-down Function Available” feature can enter the shut-down status to save power. At this status, the current consumption is reduced to the shut-down current consumption (IPON). The shut-down status is released when a charger is connected and the voltage difference between the VM pin and VDD pin becomes 1.3V (Typ.) or higher. When a battery in the over-discharge status is connected to a charger and provides that the VM pin voltage is lower than -0.7V (Typ.), the AOZ9006DIL releases the overdischarge status and turns on the discharging MOSFET when the battery voltage reaches over-discharge detection voltage (VDL) or higher. If VM pin voltage is not lower than -0.7V (Typ.), the AOZ9006DIL releases the over-discharge status and turns on the discharging MOSFET when the battery voltage reaches overdischarge detection voltage (VDU) or higher. Discharge Over-Current Status (Discharge Over-current, Load Short-circuiting) When a battery is in the normal status, and the discharge current becomes higher than specified value and the status lasts for the discharge over-current detection delay time (tDIOV), the IC turns off the discharge control MOSFET and stops discharging. This status is the discharge over-current status. In the discharge overcurrent status, the VM pin and VSS pin are shorted by the resistor between VM pin and VSS pin (RVMS) in the IC. When the load is disconnected, the VM pin returns to the VSS potential. When the impedance between the EB+ pin and EB- pin (Refer to Figure 1) increases and is equal to the impedance that enables automatic restoration and the voltage at the VM pin returns to discharge overcurrent detection voltage (VDIOV) or lower, the discharge over-current status is restored to the normal status. Even if the connected impedance is smaller than automatic restoration level, the AOZ9006DIL will be restored to the normal status from discharge over-current detection status when the voltage at the VM pin becomes the discharge over-current detection voltage (VDIOV) or lower www.aosmd.com Page 7 of 15 AOZ9006DIL by connecting the charger. The resistance (RVMD) between the VM pin and VDD pin is not connected in the discharge over-current detection status. When a battery is in the normal status, and the discharge current becomes abnormally higher (EB+ pin and EB- pin shorted), and thus the VM pin voltage is equal or higher than load short-circuiting detection voltage (VSHORT) for load short-circuiting detection delay time (tSHORT), the IC turns off the discharge control MOSFET and stops discharging. This status is the load shorting-circuiting status. In the load shorting-circuiting status, the VM pin and VSS pin are shorted by the resistor between VM pin and VSS pin (RVMS) in the IC. When the short-circuiting condition is released, the VM pin returns to the VSS potential. The resistance (RVMD) between the VM pin and VDD pin is not connected in the load shorting-circuiting status. Charge Over-current Status This function is used to recharge a connected battery whose voltage is 0V due to self-discharge. When the 0V battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EB+ and EB- pins by connecting a charger, the charging control MOSFET gate is fixed to the VDD pin voltage. When the voltage between the gate and source of the charging control MOSFET becomes equal to or higher than the turn-on voltage due to the charger voltage, the charging control MOSFET is turned on to start charging. At this time, the discharging control MOSFET is off and the charging current flows through the internal parasitic diode in the discharging control MOSFET. When the battery voltage becomes equal to or higher than overdischarge release voltage (VDU), the AOZ9006DIL enters the normal status. Calculation of Current Limit When a battery in the normal status is in the status, and the charge current is higher than the specified value and the status lasts for the charge over-current detection delay time (tCIOV), the charge control MOSFET is turned off and charging is stopped. This status is the charge over-current status. This IC will be restored to the normal status from the charge over-current status when, the voltage at the VM pin returns to charge over-current detection voltage (VCIOV) or higher by removing the charger. The charge over-current detection function does not work in the over-discharge status. The resistance (RVMD) between the VM pin and VDD pin, and the resistance (RVMS) between the VM pin and VSS pin are not connected in the charge over-current status. Rev. 1.0 August 2008 0V Battery Charging Function “Available” The charge and discharge current limit is determined by the charge and discharge over-current threshold voltages (VDIOV and VCIOV), and the total resistance of the internal MOSFET (RSS). Use the following equations to determine the maximum and minimum current limits: I DIOV _ MAX = I CIOV _ MAX = www.aosmd.com VDIOV _ MAX R SS_ MIN VCIOV _ MAX R SS_ MIN ; I DIOV _ MIN = ; I CIOV _ MIN = VDIOV _ MIN R SS_ MAX VCIOV _ MIN R SS_ MAX Page 8 of 15 AOZ9006DIL Timing Diagrams VCU Battery Voltage VCL VDU VDL Charge tCU tDL Battery Current Discharge VDD VM Pin VDIOV Voltage V SS VEB- Connect Load Connect Charger Mode (1) (2) (1) Connect Charger (3) (1) Mode: 1. Normal Mode 2. Overcharge Mode 3. Over-Discharge Mode Figure 2. Overcharge and Over-discharge Detection Timing Diagram Rev. 1.0 August 2008 www.aosmd.com Page 9 of 15 AOZ9006DIL VCU VCL Battery Voltage VDU VDL Charge Battery Current tDIOV tSHORT Discharge VDD VM Pin Vshort Voltage VDIOV VSS Normal Load Mode Overcurrent Load (1) (4) Short Circuit (1) (4) Normal Load (1) Mode: 1. Normal Mode 4. Discharge Over-current Mode Figure 3. Discharging Over-current Detection Timing Diagram Rev. 1.0 August 2008 www.aosmd.com Page 10 of 15 AOZ9006DIL Battery Voltage VCU VCL VDU VDL Charge Battery Current tCIOV tCIOV Discharge VDD VM Pin Voltage VSS VCIOV VEBConnected Charger with Charge Overcurrent Connected Charger with Charge Overcurrent Mode (3) (1) (5) (1) (5) Mode: 1. Normal Mode 3. Over-Discharge Mode 5. Charge Over-Current Mode Figure 4. Charging Over-current Detection Timing Diagram Rev. 1.0 August 2008 www.aosmd.com Page 11 of 15 AOZ9006DIL Applications Information 1 C1 0.1µF EB+ DO VSS EB- OUTM AOZ9006DIL VDD OUTM R2 2kΩ VM R1 220Ω Figure 5. AOZ9006D Applications Circuit A low-pass filter formed by R1 and C1 reduces supply voltage fluctuation on the VDD pin. R1 also provides ESD protection and serves as a current-limiting resistor in the event of charger reverse connection. The supply current of AOZ9006DIL has to flow through R1, so a small R1 should be chosen to guarantee detection accuracy of VDD voltage. Choose a resistor value between 100Ω and 330Ω for R1. Choose the value of C1 to be 0.022µF or higher. Both R1 and C1 should be placed as close as possible to AOZ9006DIL to minimize parasitic effect. R2 provides ESD protection and serve as a currentlimiting resistor in the event of charger reverse connection. A large value resistor should be chosen to limit power consumption during this condition. However, an extremely large value of R2, of course, will cause inaccuracy of VM pin voltage detection. Choose a resistor value between 300Ω and 4kΩ for R2. Table 2. External Components Selection Range Designator Purpose Min. Typ. Max. 0.022µF 0.1µF 1.0µF C1 Reduce supply voltage fluctuation, provide ESD protection, and limit current when a charger is reversely connected R1 Reduce supply voltage fluctuation 100Ω 220Ω 330Ω R2 Provide ESD protection and limit current when a charger is reversely connected 300Ω 2kΩ 4kΩ Rev. 1.0 August 2008 www.aosmd.com Page 12 of 15 AOZ9006DIL Package Dimensions, 2x5 6L, EP1_P D D1 c b A1 L1 L θ1 (All) θ1 (All) E2 E1 E A e RECOMMENDED LAND PATTERN 0.50 0.60 0.25 2.77 0.57 1.80 BOTTOM VIEW Dimensions in millimeters Symbols A A1 Min. 0.70 0.00 b c D D1 E 0.20 0.10 E1 E2 e L L1 θ1 θ2 Nom. 0.75 — Symbols A A1 Min. 0.028 0.000 0.23 0.30 0.15 0.20 2.00 BSC 1.30 1.35 1.55 5.00 BSC b c D D1 E 0.008 0.004 4.50 BSC 2.67 0.50 BSC 0.40 0.50 0 — 0° 10° 3° BSC E1 E2 e L L1 θ1 θ2 2.60 Max. 0.80 0.05 Dimensions in inches 2.95 0.60 0.10 12° Nom. 0.030 — Max. 0.031 0.002 0.009 0.012 0.006 0.008 0.079 BSC 0.051 0.053 0.061 0.197 BSC 0.177 BSC 0.105 0.116 0.020 BSC 0.016 0.020 0.024 0 — 0.004 0° 10° 12° 3° BSC 0.102 UNIT: mm Notes: 1. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 2. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Rev. 1.0 August 2008 www.aosmd.com Page 13 of 15 AOZ9006DIL Tape and Reel Dimensions, DFN 2 x 5 DFN2X5 Carrier Tape P1 P2 D0 D1 E1 R0.3 Max E2 E B0 K0 R0.3 Typ T P0 A0 Feeding Direction Unit: mm Package DFN 2X5 A0 2.41 ±0.10 B0 5.34 ±0.10 K0 1.10 ±0.10 D0 1.50 +0.1/-0 D1 E 1.50 12.00 +0.1/-0 ±0.10 DFN 2X5 Reel E1 1.75 ±0.10 E2 5.50 ±0.10 P0 4.00 ±0.10 P1 4.00 ±0.10 W2 P2 2.00 ±0.10 T 0.30 ±0.10 ø318 ø242 ø254 R 6:1 30° 30° M R6 P B ø110 6.0±1 W1 Tape Size Reel Size 12mm ø330 M W1 W2 B P R ø330.00 +0.3/-0.4 12.40 +2.0/-0.0 18.40 Max 2.40 ±0.3 0.5 1 DFN2X5 Tape Leader/Trailer & Orientation Trailer Tape 300mm min. Rev. 1.0 August 2008 Components Tape Orientation in Pocket www.aosmd.com Leader Tape 500mm min. Page 14 of 15 AOZ9006DIL AOZ9006D Package Marking Option Code Part Number Code Z9006DIX FAYWLT Assembly Lot Code Fab & Assembly Location Year & Week Code This datasheet contains preliminary data; supplementary data may be published at a later date. Alpha & Omega Semiconductor reserves the right to make changes at any time without notice. LIFE SUPPORT POLICY ALPHA & OMEGA SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. Rev. 1.0 August 2008 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.aosmd.com Page 15 of 15