A-POWER AP2623GY

AP2623GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D2
D1
▼ Low On-resistance
▼ Surface Mount Package
-30V
RDS(ON)
170mΩ
ID
G2
G1
BVDSS
- 2A
S2
S1
Description
D2
S1
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
D1
G2
SOT-26
The SOT-26 package is universally used for all commercial-industrial
applications.
S2
G1
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-30
V
±20
V
3
-2
A
3
-1.6
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-20
A
[email protected]=25℃
Total Power Dissipation
1.2
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
110
℃/W
200614041
AP2623GY
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-2A
-
-
170
mΩ
VGS=-4.5V, ID=-1.6A
-
-
280
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-5V, ID=-2A
-
2
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=-2A
-
2.8
4.5
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
o
IGSS
2
VGS=0V, ID=-250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
1.4
-
nC
VDS=-15V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
15
-
ns
tf
Fall Time
RD=15Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
150
240
pF
Coss
Output Capacitance
VDS=-25V
-
42
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
32
-
pF
Min.
Typ.
IS=-1A, VGS=0V
-
-
-1.2
V
IS=-2A, VGS=0V,
-
20
-
ns
dI/dt=100A/µs
-
13
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
AP2623GY
12
20
T A = 25 o C
10
-ID , Drain Current (A)
-ID , Drain Current (A)
15
-5.0V
-4.5V
10
- 10 V
-7.0V
T A = 150 o C
- 10 V
-7.0V
5
8
-5.0V
-4.5V
6
4
2
V G =-3.0V
VVG =-3.0V
G =-3.0V
0
0
0
1
2
3
4
5
6
0
7
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
230
I D = - 1.6 A
210
I D =- 2 A
V G = - 10V
1.6
T A =25 o C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
1
-V DS , Drain-to-Source Voltage (V)
190
170
1.2
1.0
150
0.8
130
0.6
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
2.0
T j =150 o C
Normalized -VGS(th) (V)
-IS(A)
1.5
T j =25 o C
1.0
0.5
0.0
1.2
0.8
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2623GY
f=1.0MHz
-VGS , Gate to Source Voltage (V)
12
1000
V DS =-24V
I D =-2A
10
8
C (pF)
C iss
6
100
C oss
C rss
4
2
10
0
0
1
2
3
4
1
5
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
1ms
1
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthja)
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 180℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q