A-POWER AP4502GM

AP4502GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Low Gate Charge
RDS(ON)
D1
D1
▼ Fast Switching Performance
20V
18mΩ
ID
SO-8
S1
S2
G1
G2
8.3A
-20V
P-CH BVDSS
RDS(ON)
Description
45mΩ
ID
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
-5A
D2
D1
The SO-8 package is widly preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
20
-20
V
±12
±12
V
3
8.3
-5
A
3
6.5
-4
A
30
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
201009074-1/7
AP4502GM
N-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
Typ.
20
-
-
V
VGS=10V, ID=9A
-
-
16
mΩ
VGS=4.5V, ID=8.3A
-
-
18
mΩ
VGS=2.5V, ID=5.2A
-
-
30
mΩ
VDS=VGS, ID=250uA
0.5
-
-
V
VGS=0V, ID=250uA
2
Max. Units
VDS=10V, ID=8.3A
-
8.3
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=8A
-
22
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
VDS=10V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
30
-
ns
tf
Fall Time
RD=10Ω
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
1350
-
pF
Coss
Output Capacitance
VDS=20V
-
325
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
255
-
pF
Min.
Typ.
IS=1.8A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
32
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
24
-
nC
2/7
AP4502GM
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
Typ.
-20
-
-
V
VGS=-10V, ID=-6A
-
-
40
mΩ
VGS=-4.5V, ID=-5A
-
-
45
mΩ
VGS=-2.5V, ID=-4A
-
-
80
mΩ
VDS=VGS, ID=-250uA
-0.5
-
-
V
VGS=0V, ID=-250uA
2
Max. Units
VDS=-10V, ID=-2.2A
-
2.2
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=-5A
-
13
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.5
-
nC
VDS=-10V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
24
-
ns
tf
Fall Time
RD=10Ω
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
920
-
pF
Coss
Output Capacitance
VDS=-20V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
Max.
30
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-1.8A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
AP4502GM
N-Channel
30
30
5.0V
4.5V
3.5V
2.5V
20
V G = 2.0 V
10
20
V G =2.0V
10
0
0
0
1
2
0
3
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
34
1.8
I D = 5.2A
I D =8.3A
V G =10V
T A = 25 o C
Normalized R DS(ON)
30
RDS(ON0 (mΩ)
5.0V
4.5V
3.5V
2.5V
T A =150 ℃
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 ℃
26
22
18
1.4
1.0
30
14
10
-30
0.6
1
2
3
4
5
-50
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
1.6
Normalized VGS(th) (V)
10
6
IS(A)
50
o
V GS , Gate-to-Source Voltage (V)
T j =150 o C
0
T j =25 o C
4
2
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4502GM
N-Channel
f=1.0MHz
10000
10
ID=8A
V DS = 10 V
C iss
1000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
4
2
10
0
0
10
20
30
40
1
50
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R thja)
Duty factor=0.5
100us
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5/7
AP4502GM
P-Channel
20
20
T A = 150 o C
- 5.0 V
- 4.5 V
- 3.5 V
- 2.5 V
V G = - 1.5 V
T A =25 o C
16
-ID , Drain Current (A)
-ID , Drain Current (A)
16
12
8
4
-5.0 V
- 4.5 V
- 3.5 V
- 2.5 V
12
V G = - 1.5 V
8
4
0
0
0
1
2
3
4
5
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.4
60
I D = -5.7 A
I D = -5.7 A
V G = - 10V
T A =25 o C
56
Normalized R DS(ON)
RDS(ON) (mΩ)
1.2
52
48
1.0
0.8
44
30
0.6
40
1
2
3
4
-50
5
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.2
Normalized -VGS(th) (V)
6
-IS(A)
-30
4
T j =150 o C
T j =25 o C
1.0
0.8
2
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP4502GM
P-Channel
f=1.0MHz
10000
9
I D = -5A
V DS = -16V
1000
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
3
10
0
0.0
5.0
10.0
15.0
20.0
25.0
1
30.0
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thja)
100
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
100us
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
0.01
Rthja=135 oC/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7/7
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
4502GM
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
θ