A-POWER AP85T03GJ

AP85T03GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
BVDSS
30V
RDS(ON)
6mΩ
ID
▼ Fast Switching
G
75A
S
Description
G D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP85T03GJ) is
available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
75
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
55
A
1
IDM
Pulsed Drain Current
350
A
[email protected]=25℃
Total Power Dissipation
107
W
Linear Derating Factor
0.7
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
1
200810235
AP85T03GH/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=45A
-
-
6
mΩ
VGS=4.5V, ID=30A
-
-
10
mΩ
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
gfs
Forward Transconductance
VDS=10V, ID=30A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=175 C) VDS=24V, VGS=0V
-
-
500
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=30A
-
33
52
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
8
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
24
nC
Qoss
Output Charge
VDD=15V,VGS=0V
-
24.5
39
nC
VDS=15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
77
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
35
-
ns
tf
Fall Time
RD=0.5Ω
-
67
-
ns
Ciss
Input Capacitance
VGS=0V
-
2700 4200
pF
Coss
Output Capacitance
VDS=25V
-
550
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
380
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP85T03GH/J
300
150
o
o
T C = 175 C
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
10V
7.0V
6.0V
250
200
150
4.5V
100
100
4.5V
V G =4.0V
50
V G =4.0V
50
0
0
0
1
2
3
4
5
0
6
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
13
2.0
I D =30A
T c =25 ℃
I D =45A
V G =10V
Normalized RDS(ON)
11
RDS(ON) (mΩ)
10V
7.0V
6.0V
9
7
1.5
1.0
5
0.5
3
2
4
6
8
-50
10
0
50
100
150
200
o
T j , Junction Temperature ( C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
2.4
2
T j =25 o C
1.6
IS (A)
VGS(th) (V)
T j =175 o C
20
10
1.2
0.8
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
25
100
175
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP85T03GH/J
14
f=1.0MHz
10000
I D =30A
V DS =15V
V DS =20V
V DS =24V
10
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
12
6
1000
C oss
C rss
4
2
100
0
0
10
20
30
40
50
60
1
70
6
Q G , Total Gate Charge (nC)
11
16
21
26
31
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
ID (A)
100us
1ms
10
10ms
100ms
DC
T c =25 o C
Single Pulse
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
E3
B1
F1
e
Millimeters
SYMBOLS
E1
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
F
2.20
2.63
3.05
F1
0.50
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Laser Marking
Part Number
85T03GH
Package Code
Meet Rohs requirement
for low voltage MOSFET only
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D
Millimeters
A
SYMBOLS
c1
D1
E2
E1
E
A1
B2
F
B1
c
e
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.40
0.60
0.80
B2
0.60
0.85
1.05
c
c1
0.40
0.50
0.60
0.40
0.50
0.60
D
6.40
6.60
6.80
D1
4.80
5.20
5.50
E
6.70
7.00
7.30
E1
5.40
5.60
5.80
E2
1.30
1.50
1.70
e
----
2.30
----
F
7.00
8.30
9.60
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
85T03GJ
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
LOGO
Date Code (YWWSSS)
Y :Last Digit Of The Year
WW :Week
SSS :Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
6