A-POWER AP86T02GJ

AP86T02GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
BVDSS
25V
RDS(ON)
6mΩ
ID
▼ Fast Switching Characteristic
G
75A
S
Description
G
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP86T02GJ) is
available for low-profile applications.
G
D
D S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V3
75
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
62
A
1
IDM
Pulsed Drain Current
300
A
[email protected]=25℃
Total Power Dissipation
75
W
Linear Derating Factor
0.5
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Units
2
℃/W
110
℃/W
1
200808159
AP86T02GH/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
25
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=45A
-
-
6
mΩ
VGS=4.5V, ID=30A
-
-
10
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
42
-
S
IDSS
Drain-Source Leakage Current
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=175 C)
VDS=20V, VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=30A
-
23
37
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
5
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
14
nC
VDS=10V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
105
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
32
-
ns
tf
Fall Time
RD=0.3Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
1830 2930
pF
Coss
Output Capacitance
VDS=25V
-
490
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
360
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.6
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
Test Conditions
2
Max. Units
VSD
Forward On Voltage
IS=45A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Min.
Typ.
-
-
Drain-Source Avalanche Ratings
Symbol
EAS
Parameter
Test Conditions
4
Drain-Source Avalanche Energy
ID=24A, VDD=20V, L=100uH
Max. Units
29
mJ
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A .
4.Single Pulse Test.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP86T02GH/J
200
120
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
150
T C = 175 C
90
100
V G =3.0V
50
60
V G = 3 .0V
30
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.8
I D =30A
T c =25 ℃
I D =45A
V G =10V
Normalized RDS(ON)
12
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
o
ID , Drain Current (A)
o
T C =25 C
8
4
1.4
1.0
0.6
2
4
6
8
10
25
50
75
100
125
150
175
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
T j =175 o C
T j =25 o C
Is (A)
20
Normalized VGS(th) (V)
1.2
10
0
0.8
0.4
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
25
50
75
100
125
150
175
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP86T02GH/J
f=1.0MHz
10000
I D =30A
12
V DS =10V
V DS =15V
V DS =20V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
16
1000
C oss
C rss
4
100
0
0
10
20
30
40
1
50
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
ID (A)
100
1ms
10
10ms
100ms
1s
DC
o
T c =25 C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
40
2.8V 3V
30
3.2V
3.5V
3.8V
80
T j =25 o C
RDS(ON) (mΩ)
ID , Drain Current (A)
V DS =5V
T j =175 o C
40
20
4.2V
4.5V
10
10V
0
0
0
2
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
0
20
40
60
80
100
I D (A)
Fig 12. Drain-Source On Resistance
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
86T02GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-251
D
Millimeters
A
SYMBOLS
c1
D1
E1
E
A1
B2
F
B1
MIN
NOM
MAX
A
2.20
2.30
2.40
A1
0.90
1.20
1.50
B1
0.50
0.69
0.88
B2
0.60
0.87
1.14
c
c1
0.40
0.50
0.60
0.40
0.50
0.60
D
6.40
6.60
6.80
D1
5.20
5.35
5.50
E
6.70
7.00
7.30
E1
5.40
5.80
6.20
e
----
2.30
----
F
5.88
6.84
7.80
1.All Dimensions Are in Millimeters.
c
e
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
86T02GJ
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
LOGO
Date Code (YWWSSS)
Y :Last Digit Of The Year
WW :Week
SSS :Sequence
6