A-POWER AP9435GH

AP9435GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
G
BVDSS
-30V
RDS(ON)
50mΩ
ID
- 20A
S
Description
G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
D
S
TO-252(H)
The TO-252/TO-251 package is widely used for commercial-industrial
application.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
- 30
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current
- 20
A
[email protected]=100℃
Continuous Drain Current
-13
A
1
IDM
Pulsed Drain Current
-60
A
[email protected]=25℃
Total Power Dissipation
12.5
W
Linear Derating Factor
0.1
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
10
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
201017075-1/4
AP9435GH/J
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-10A
-
-
50
mΩ
VGS=-4.5V, ID=-5A
-
-
90
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
10
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=± 20V
-
-
±100
nA
ID=-10A
-
8
16
nC
VGS(th)
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.3
-
nC
VDS=-15V
-
6.3
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-10A
-
46
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=1.5Ω
-
7.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
570
740
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Min.
Typ.
IS=-10A, VGS=0V
-
-
-1.3
V
IS=-10A, VGS=0V,
-
18
-
ns
dI/dt=-100A/µs
-
10
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9435GH/J
80
70
o
-10V
T C =25 C
o
T C =150 C
-10V
60
-ID , Drain Current (A)
-ID , Drain Current (A)
-8.0V
60
-6.0V
40
-4.5V
20
V G =-4.0V
-8.0V
50
40
-6.0V
30
-4.5V
20
V G =-4.0V
10
0
0
0
2
4
6
8
10
0
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
Fig 2. Typical Output Characteristics
90
1.8
I D =-10A
T C =25 ℃
I D =-10A
V G =-10V
1.6
Normalized RDS(ON)
80
RDS(ON) (mΩ)
2
-V DS , Drain-to-Source Voltage (V)
70
60
50
1.4
1.2
1.0
0.8
40
0.6
30
2
4
6
8
-50
10
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
1.8
-VGS(th) (V)
10
6
-IS(A)
50
o
-V GS , Gate-to-Source Voltage (V)
T j =150 o C
0
T j =25 o C
4
1.6
1.4
1.2
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9435GH/J
f=1.0MHz
1000
I D =-10A
V DS =-24V
10
Ciss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
Coss
Crss
4
2
0
10
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
10
-ID(A)
100us
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
9435GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
ADVANCED POWER ELECTRONICS CORP.
D
Millimeters
A
c1
SYMBOLS MIN
D1
NOM
MAX
Original Original
E2
E1
E
A1
B2
F
B1
Original
A
2.10
2.30
2.50
A1
0.60
1.20
1.80
B1
0.40
0.60
0.80
B2
0.60
0.95
1.25
c
c1
0.40
0.50
0.65
0.40
0.55
0.70
D
6.00
6.50
7.00
D1
4.80
5.40
5.90
E1
5.00
5.50
6.00
E2
1.20
1.70
2.20
e
----
2.30
----
F
7.00
---
16.70
1.All Dimensions Are in Millimeters.
c
e
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
meet Rohs requirement
Package Code
9435GJ
LOGO
YWWSSS
Date Code (YWWSSS)
Y :Last Digit Of The Year
WW :Week
SSS :Sequence