A-POWER AP9972GP

AP9972GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ Surface Mount Package
BVDSS
60V
RDS(ON)
18mΩ
ID
60A
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9972GP)
are available for low-profile applications.
G
Absolute Maximum Ratings
Parameter
Symbol
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±25
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
60
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
38
A
1
IDM
Pulsed Drain Current
230
A
[email protected]=25℃
Total Power Dissipation
89
W
0.7
W/℃
Linear Derating Factor
3
EAS
Single Pulse Avalanche Energy
450
mJ
IAR
Avalanche Current3
30
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
200803183
AP9972GS/P
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=35A
-
-
18
mΩ
VGS=4.5V, ID=25A
-
-
22
mΩ
VGS=0V, ID=250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=35A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=35A
-
32
51
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
VDS=30V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=35A
-
58
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
45
-
ns
tf
Fall Time
RD=0.86Ω
-
80
-
ns
Ciss
Input Capacitance
VGS=0V
-
3170 5070
pF
Coss
Output Capacitance
VDS=25V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
-
Ω
Min.
Typ.
IS=35A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=35A, VGS=0V,
-
50
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
48
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP9972GS/P
200
150
10V
7.0V
150
ID , Drain Current (A)
ID , Drain Current (A)
10V
7.0V
5.0V
100
4.5V
5.0V
100
4.5V
50
50
V G =3.0V
o
T C = 150 C
V G =3.0V
o
T C =25 C
0
0
0
2
4
6
8
10
12
0
14
2
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
20
I D = 25 A
T C =25 o C
I D =35A
V G =10V
Normalized RDS(ON)
1.4
RDS(ON) (mΩ)
18
16
1.2
1.0
0.8
14
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
1.7
IS(A)
T j =150 o C
Normalized VGS(th) (V)
15
T j =25 o C
10
1.2
0.7
5
0
0.2
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9972GS/P
f=1.0MHz
12
10000
C iss
V DS =48V
V DS =38V
V DS =30V
8
C (pF)
VGS , Gate to Source Voltage (V)
I D = 35 A
10
6
1000
4
C oss
C rss
2
100
0
0
20
40
1
60
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
ID (A)
100us
1ms
10ms
10
T C =25 o C
Single Pulse
100ms
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
V DS =5V
ID , Drain Current (A)
80
T j =25 o C
QG
T j =150 o C
4.5V
60
QGS
QGD
40
20
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
φ
L2
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
L1
L5
c1
D
L4
b1
L3
L
c
b
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.6
3.10
3.6
L4
14.70
15.50
16
L5
6.30
6.50
6.70
φ
3.50
3.60
3.70
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
9972GP
meet Rohs requirement
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
SYMBOLS
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
D
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
E
9.70
10.10
10.50
e
2.04
2.54
3.04
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
b1
L2
L3
b
e
L4
Millimeters
A
A2
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c θ
c1
A1
Part Marking Information & Packing : TO-263
Part Number
Package Code
XXXXXS
9972GS
meet Rohs requirement
YWWSSS
LOGO
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
6