CSD22202W15 www.ti.com SLPS431 – JUNE 2013 P-Channel NexFET™ Power MOSFET Check for Samples: CSD22202W15 PRODUCT SUMMARY FEATURES 1 • • • • • • • Low Resistance Small Footprint 1.5-mm × 1.5-mm Pb Free Gate ESD Protection RoHS Compliant Halogen Free Gate-Source Voltage Clamp VDS Drain to Drain Voltage –8 V Qg Gate Charge Total (–4.5V) 6.5 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage Battery Management Battery Protection Load Switch Applications Top View and Circuit Configuration Source S S S S VGS = –4.5V 10.2 mΩ –0.8 Device Package Media CSD22202W15 1.5-mm × 1.5-mm Wafer BGA Package 7-Inch Reel TA = 25°C unless otherwise stated The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. S mΩ V Qty Ship 3000 Tape and Reel . ABSOLUTE MAXIMUM RATINGS DESCRIPTION G nC 14.5 . ORDERING INFORMATION APPLICATIONS • • • 1.0 VGS = –2.5V VALUE UNIT VDS Drain to Source Voltage –8 V VGS Gate to Source Voltage –6.0 V ID Continuous Drain Current(1) (Silicon Limitted) -10 A A (2) Pulsed Drain Current -48 IG Continuous Gate Current(3) -0.5 A PD Power Dissipation(1) 1.5 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C (1) RθJA = 75°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300μs, duty cycle ≤2% (3) Limited by gate resistance. Gate D D D Drain RDS(on) vs VGS GATE CHARGE 5 TC = 25°C Id = −2A TC = 125ºC Id = −2A 27 − VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 30 24 21 18 15 12 9 6 3 0 0 1 2 3 4 5 − VGS - Gate-to- Source Voltage (V) 6 G001 ID = −2A VDS =−4V 4 3 2 1 0 0 1 2 3 4 5 Qg - Gate Charge (nC) 6 7 8 G001 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2013, Texas Instruments Incorporated CSD22202W15 SLPS431 – JUNE 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, IDS = –250μA BVGSS Gate to Source Voltage VDS = 0V, IG = –250μA –8 V –6.0 V IDDS Drain to Source Leakage Current VGS = 0V, VDS = –4V –1 μA IGSS Gate to Source Leakage Current VDS = 0V, VGS = –4V –100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = –250μA –0.8 -1.1 V RDS(on) Drain to Source On Resistance VGS = –2.5V, IDS = –2A 14.5 17.4 mΩ VGS = –4.5V, IDS = –2A 10.2 12.2 mΩ gfs Transconductance VDS = –4V, IDS = –2A 15.3 -0.6 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance RG Series Gate Resistance 28 Qg Gate Charge Total (–4.5V) 6.5 Qgd Gate Charge - Gate to Drain Qgs Gate Charge - Gate to Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = –4V, f = 1MHz VDS = –4V, ID = –2A VDS = –4V, VGS = 0V VDS = –4V, VGS = –4.5V, IDS = –2A, RG = 10Ω 1060 1390 pF 588 765 pF 192 250 pF 8.4 nC Ω 1.0 nC 1.6 nC 0.8 nC 2.7 nC 10.4 ns 8.4 ns 109 ns 38 ns Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time IDS = –2A, VGS = 0V -0.75 VDS = –4V, IF = –2A, di/dt = 200A/μs 22 -1 nC V 19 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER RθJA (1) (2) 2 TYPICAL VALUES UNIT Junction to Ambient Thermal Resistance (1) 75 °C/W (2) 210 °C/W Junction to Ambient Thermal Resistance Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Device mounted on FR4 material with minimum Cu mounting area. Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD22202W15 CSD22202W15 www.ti.com SLPS431 – JUNE 2013 Typ RθJA = 210°C/W when mounted on minimum pad area of 2 oz. Cu. Typ RθJA = 75°C/W when mounted on 1inch2 of 2 oz. Cu. M0149-01 M0150-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD22202W15 3 CSD22202W15 SLPS431 – JUNE 2013 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 50 VGS = −4.5V VGS = −2.5V VGS = −1.8V 45 40 − IDS - Drain-to-Source Current (A) − IDS - Drain-to-Source Current (A) 50 35 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 − VDS - Drain-to-Source Voltage (V) 40 35 30 25 20 15 TC = 125°C TC = 25°C TC = −55°C 10 5 0 1 VDS = −5V 45 0 0.5 G001 Figure 2. Saturation Characteristics TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 4 3 2 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd f = 1MHz VGS = 0V 1400 1200 C − Capacitance (nF) − VGS - Gate-to-Source Voltage (V) G001 1600 ID = −2A VDS =−4V 1000 800 600 400 1 200 0 0 1 2 3 4 5 Qg - Gate Charge (nC) 6 7 0 8 0 1 2 3 4 5 6 − VDS - Drain-to-Source Voltage (V) G001 Figure 4. Gate Charge 7 8 G001 Figure 5. Capacitance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1.1 30 RDS(on) - On-State Resistance (mΩ) ID = −250uA − VGS(th) - Threshold Voltage (V) 3 Figure 3. Transfer Characteristics 5 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 −75 −25 25 75 125 TC - Case Temperature (ºC) Figure 6. Threshold Voltage vs. Temperature 4 1 1.5 2 2.5 − VGS - Gate-to-Source Voltage (V) 175 TC = 25°C Id = −2A TC = 125ºC Id = −2A 27 24 21 18 15 12 9 6 3 0 0 G001 1 2 3 4 5 − VGS - Gate-to- Source Voltage (V) 6 G001 Figure 7. On-State Resistance vs. Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD22202W15 CSD22202W15 www.ti.com SLPS431 – JUNE 2013 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 10 VGS = −2.5V VGS = −4.5V 1.3 ID = −2A − ISD − Source-to-Drain Current (A) Normalized On-State Resistance 1.4 1.2 1.1 1 0.9 0.8 0.7 −75 −25 25 75 125 TC - Case Temperature (ºC) 175 TC = 25°C TC = 125°C 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 − VSD − Source-to-Drain Voltage (V) G001 Figure 8. Normalized On-State Resistance vs. Temperature G001 Figure 9. Typical Diode Forward Voltage TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 100 1000 1ms 10ms 100ms 1s DC − IAV - Peak Avalanche Current (A) − IDS - Drain-to-Source Current (A) 1 100 10 1 0.1 Single Pulse Typical RthetaJA =210ºC/W(min Cu) 0.01 0.01 0.1 1 − VDS - Drain-to-Source Voltage (V) 10 TC = 25ºC TC = 125ºC 1 0.01 10 0.1 TAV - Time in Avalanche (ms) G001 Figure 10. Maximum Safe Operating Area 1 G001 Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING − IDS - Drain- to- Source Current (A) 6.0 5.0 4.0 3.0 2.0 1.0 Typical RthetaJA =75ºC/W(max Cu) 0.0 −50 −25 0 25 50 75 100 125 TA - Ambient Temperature (ºC) 150 175 G001 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD22202W15 5 CSD22202W15 SLPS431 – JUNE 2013 www.ti.com MECHANICAL DATA CSD22202W15 Package Dimensions Solder Ball Ø 0.31 ±0.075 Pin 1 Mark 1 2 3 2 3 1 A B 1.50 B 1.00 +0.00 –0.08 0.50 A C C 1.50 +0.00 –0.08 0.62 Max Top View 0.50 Bottom View 0.04 0.62 Max 0.35 ±0.10 Side View Seating Plate Front View M0171-01 NOTE: All dimensions are in mm (unless otherwise specified) Pinout POSITION 6 DESIGNATION A1 Gate A2, A3, B1, B2, B3 Source C1, C2, C3 Drain Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD22202W15 CSD22202W15 www.ti.com SLPS431 – JUNE 2013 Recommended Land Pattern Ø 0.25 1 2 3 1.00 0.50 A B C 0.50 M0172-01 NOTE: All dimensions are in mm (unless otherwise specified) Text Added For Spacing Text Added For Spacing Tape and Reel Information 4.00 ±0.10 2.00 ±0.05 4.00 ±0.10 Ø 0.50 ±0.05 0.86 ±0.05 1.60 ±0.05 5° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 Ø 1.50 ±0.10 0.254 ±0.02 1.60 ±0.05 5° Max M0173-01 NOTES: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. Thickness: 0.30 ±0.05mm 6. MSL1 260°C (IR and convection) PbF reflow compatible Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD22202W15 7 PACKAGE OPTION ADDENDUM www.ti.com 17-Jul-2013 PACKAGING INFORMATION Orderable Device Status (1) CSD22202W15 ACTIVE Package Type Package Pins Package Drawing Qty DSBGA YZF 9 3000 Eco Plan Lead/Ball Finish (2) Green (RoHS & no Sb/Br) MSL Peak Temp Op Temp (°C) Device Marking (3) SNAGCU Level-1-260C-UNLIM (4/5) -55 to 150 22202 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 Samples PACKAGE MATERIALS INFORMATION www.ti.com 17-Jul-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD22202W15 Package Package Pins Type Drawing SPQ DSBGA 3000 YZF 9 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 180.0 8.4 Pack Materials-Page 1 1.65 B0 (mm) K0 (mm) P1 (mm) 1.65 0.81 4.0 W Pin1 (mm) Quadrant 8.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 17-Jul-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD22202W15 DSBGA YZF 9 3000 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications. In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. Nonetheless, such components are subject to these terms. No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of non-designated products, TI will not be responsible for any failure to meet ISO/TS16949. Products Applications Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps DSP dsp.ti.com Energy and Lighting www.ti.com/energy Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial Interface interface.ti.com Medical www.ti.com/medical Logic logic.ti.com Security www.ti.com/security Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com Wireless Connectivity www.ti.com/wirelessconnectivity Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2013, Texas Instruments Incorporated