HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System A E ØC E B D H MAXIMUM RATINGS J G #8-32 UNC-2A 1.0 A IC I F E VCBO 65 V VCEO 35 V VCES VEBO MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 65 V B .980 / 24.89 C .370 / 9.40 .385 / 9.78 4.0 V D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 PDISS 13.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 13.5 °C/W CHARACTERISTICS ORDER CODE: ASI10736 TC = 25 °C NONETEST CONDITIONS SYMBOL .175 / 4.45 .750 / 19.05 J MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 200 mA 65 V BVCES IC = 200 mA 65 V BVCEO IC = 200 mA 35 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 30 V GP VCC = 28 V IC = 200 mA 5.0 f = 1.0 MHz PIN = 1.0 W f = 150 MHz 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA --- --- 15 pF dB REV. B 1/1