MRF5174 NPN RF POWER TRANSISTOR DESCRIPTION: The MRF5174 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 225 to 400 MHz Band. PACKAGE STYLE .280 4L STUD A 45° FEATURES INCLUDE: E B • High Gain • Gold Metallization • Emitter Ballasting C E B C D J E I F G MAXIMUM RATINGS H K 0.5 A IC 40 V VCBO PDISS O 8.75 W @ TC = 25 C O O O O TJ -55 C to +200 C TSTG -55 C to +200 C θJC 20 C/W CHARACTERISTICS DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 MAXIMUM .137 / 3.48 .572 / 14.53 F .130 / 3.30 G .245 / 6.22 H .255 / 6.48 .640 / 16.26 I O #8-32 UNC J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 40 V BVCEO IC = 1.0 mA 28 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCE = 28 V IC = 100 mA 20 f = 1.0 MHz POUT = 2.0 W f = 400 MHz 12 50 13 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 500 µA 120 --- 5.0 pF dB % REV. A 1/1