Semiconductor SM5427-H / SM5427-H(B) High Brightness LED Lamp Features • • • • • • Green colored transparency lens type φ5mm(T-13/4) all plastic mold type High efficiency led lamp High luminosity Flangeless package Low power consumption Application • Full color displays • Message boards Outline Dimensions unit : STRAIGHT TYPE mm STOPPER TYPE 4.6±0.2 4.6±0.2 7.7±0.2 7.7±0.2 3.6±0.5 0.5 0.5 22.0 MIN 22.0 MIN 1.0 MIN 2.54 NOM 1.0 MIN 2.54 NOM PIN Connections 1.Anode 2.Cathode TENTATIVE 1 SM5427-H / SM5427-H(B) Absolute maximum ratings Characteristic Symbol Ratings Unit Power Dissipation PD 110 mW Forward Current IF 30 mA IFP 50 mA Reverse Voltage VR 4 V Operating Temperature Topr -25∼85 ℃ Storage Temperature Tstg -30∼100 ℃ 1 * Peak Forward Current 2 260℃ for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF= 20mA - 2.2 2.8 V Luminous Intensity IV IF= 20mA 68 120 155 mcd λP Δλ IR IF= 20mA - 570 - nm IF= 20mA - 30 - nm VR=4V - - 10 uA - ±17 - Peak Wavelength Spectrum Bandwidth Reverse Current *3Half angle θ1/2 X Y IF= 20mA ±35 deg *3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity TENTATIVE 2 SM5427-H / SM5427-H(B) Characteristic Diagrams Fig. 2 IV - IF Forward Current IF [mA] Luminous Intensity Iv [mcd] Fig. 1 IF - VF Forward Voltage VF [V] Forward Fig. 3 IF – Ta Forward Relative Intensity [%] Current IF [mA] Fig.4 Spectrum Distribution Ambient Temperature Ta [℃] Wavelength λ [nm] Fig. 5-1 Radiation Diagram(X) 100 Current IF [mA] 50 0 Fig. 5-2 Radiation Diagram(Y) 50 100 Relative Luminous Intensity Iv [%] 100 50 0 50 100 Relative Luminous Intensity Iv [%] TENTATIVE 3