THN5601B Semiconductor SiGe NPN Transistor □ Applications Unit in mm SOT-223 o VHF and UHF band medium power amplifier 6.5 3.0 4 □ Features 3.5 7.0 o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz 1 o GP = 8.5 dB at f = 900 MHz 2 3 2.3 0.7 4.6 Pin Configuration Pin No Symbol Description 1 E Emitter 2 B Base 3 E Emitter 4 C Collector □ Absolute Maximum Ratings (TA = 25 ℃) Symbol Parameter Ratings Unit VCBO Collector to Base Breakdown Voltage 20 V VCEO Collector to Emitter Breakdown Voltage 8 V VEBO Emitter to Base Breakdown Voltage 3 V IC Collector Current 350 mA Ptot Total Power Dissipation 1 W Tstg Storage Temperature -65 ~ 150 ℃ Tj Operating Junction Temperature 150 ℃ 1 THN5601B □ Thermal Characteristics Symbol Rth j-s Parameter Thermal resistance from junction to soldering point Test Condition Value Unit Ptot = 1W; Ts = 60 ℃;note1 55 K/W * Note 1. Ts is temperature at the soldering point of the collector pin. □ Quick Reference Data RF performance at Ts ≤ 60 ℃ in common emitter test circuit Mode of Operation f [MHz] VCE [V] POUT [mW] GP [dB] ηC [%] CW, class-AB 900 4.8 600 ≥7 ≥ 60 2 THN5601B □ Electrical Characteristics (TA = 25 ℃, unless otherwise specified) Parameter Symbol Min. Test Conditions Typ. Max. Unit ICBO VCB = 19 V, IE = 0 mA 0.5 ㎂ ICEO VCE = 8 V, IB = 0 mA 10 ㎂ Emitter Cut-off Current IEBO VEB = 1.5 V, IC = 0 mA 1.0 ㎂ DC Current Gain hFE VCE = 4.8 V, IC = 60 mA Gain Bandwidth Product fT VCE = 4.8 V, IC = 100 mA Collector Cut-off Current 60 300 GHz Insertion Power Gain |S21|2 VCE = 4.8 V, IC = 100 mA, f = 1 GHz dB Maximun Available Gain MAG VCE = 4.8 V, IC = 100 mA, f = 1 GHz dB Reverse Transfer Capacitance Cre VCB = 4.8 V, IE = 0mA, f = 1 MHz 4.2 pF □ hFE Classification Marking R1401 R1401· hFE Value 60 - 200 170 - 300 DC Current Gain vs. Collector Current Reverse Transfer Capacitance vs. Collector to Base Voltage DC Current Gain, hFE 180 Reverse Transfer Capacitance, Cre (pF) 200 VCE = 4.8 V 160 140 120 100 80 60 40 20 0 -3 10 10 -2 -1 10 Collector Current, IC (A) 0 10 7 f = 1 MHz 6 5 4 3 0 2 4 6 8 10 Collector to Base Voltage, VCB (V) 3 THN5601B □ Application Information (I) RF performance at Ts ≤ 60 ℃ in common emitter test circuit Mode of Operation f [MHz] VCE [V] POUT [mW] GP [dB] ηC [%] CW, class-AB 900 4.8 600 ≥7 ≥ 60 Power Gain and Collector Efficiency vs. Output Power 80 GP 70 60 8 50 6 40 ηC 30 20 4 10 5 10 15 20 25 30 Output Power. POUT (dBm) 10 f = 900 MHz, VCE = .48 V, ICQ = 5 mA 90 Collector Efficiency, ηC (%) f = 900 MHz, VCE = 4.8 V, ICQ = 5 mA Power Gain, GP (dB) 35 100 12 2 Output Power vs. Input Power 30 25 20 15 10 5 0 35 0 5 10 15 20 25 Input Power, PIN (dBm) Output Power, POUT (dBm) Typical Large Signal Impedance At VCE = 4.8 V, ICQ = 5 mA, POUT = 28 dBm Freq.[MHz] 800 820 840 860 880 900 920 940 960 980 1000 Γ source Mag 0.615 0.631 0.65 0.666 0.682 0.698 0.711 0.724 0.735 0.746 0.760 Γ load Ang -162.5 -164 -165.9 -167.6 -169.5 -171.2 -172.7 -174.5 -175.9 -177.6 -179.3 Mag 0.460 0.478 0.494 0.509 0.524 0.538 0.550 0.563 0.578 0.593 0.600 Ang 161.4 159.6 158.0 156.2 154.0 151.9 150.0 147.3 145.0 142.8 140.3 4 THN5601B □ Application Information (II) RF performance at Ts ≤ 60 ℃ in common emitter configuration. (I CQ = 5mA) Mode of Operation f [MHz] VCE [V] PL [mW] GP [dB] ηC [%] CW, class-AB 450 4.8 630 ≥ 14 ≥ 60 Optimum Input/Load Impedance as a frequency ZL ZS Freq. [MHz] RS XS RL XL 400 8.35 -3.34 23.32 4.19 450 7.38 -7.19 20.24 9.95 500 6.80 -11.03 18.27 16.37 550 6.74 -14.89 17.30 23.65 600 7.03 -18.92 17.05 32.08 ZL ZS Input Impedance vs. Frequency 20 35 15 30 10 Load Impedance, ZL (Ω ) InputInput Impedance, Impedance,ZSZS(Ω) ( ) W Load Impedance vs. Frequency RS 5 0 -5 -10 XS 400 450 500 550 Frequency (MHz) RL 20 15 XL 10 5 -15 -20 350 25 600 650 0 350 400 450 500 550 600 650 Frequency (MHz) 5 THN5601B □ Evaluation Board for 900 MHz Application Unit : mm Part List C1, C11 100nF C2, C10 1nF 53 C3, C4, C8, C9 THN5601B 100pF C5 6pF C7 4pF R1 2.2Ω R2, R3 10Ω L1, L2 50nH 119 Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm Test condition : CW test, V CC = 4.8 V, ICQ = 5 mA, frequency = 900 MHz. □ Test Circuit Schematic Diagram VBB 2.2 Ω 100 nF 50 nH 50 nH 10 Ω 10 Ω 1 nF 100 pF 90 Ω, λ/4 @ 900 MHz 100 pF 1 nF VCC 100 nF 90 Ω, λ/4 @ 900 MHz OUTPUT 100 pF INPUT 4 pF THN5601 B 100 pF 6 pF 6 THN5601B □ Package Dimensions 0.95 0.85 Unit : mm S seating plane 6.7 6.3 0.32 0.24 3.1 2.9 4 0.10 0.01 16° max 3.7 3.3 7.3 6.7 16° 10° max 1.8 max 1 2 3 0.8 0.6 2.3 4.6 7