SRAM MT5C6408 Austin Semiconductor, Inc. 8K x 8 SRAM PIN ASSIGNMENT (Top View) SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) 4 3 2 1 28 27 26 • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention • High-performance, low-power CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE1\ and CE2 • All inputs and outputs are TTL compatible OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access -12 -15 -20 -25 -35 -45 -55* -70* C EC F NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss Vcc WE\ CE2 A8 A9 A11 OE\ A10 CE1\ DQ8 DQ7 DQ6 DQ5 DQ4 A5 A4 A3 A2 A1 A0 DQ0 25 24 23 22 21 20 19 5 6 7 8 9 10 11 A8 A9 A11 OE\ A10 CE1\ DQ7 12 13 14 15 16 17 18 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc WE\ CE2 A8 A9 A11 OE\ A10 CE1\ DQ8 DQ7 DQ6 DQ5 DQ4 GENERAL DESCRIPTION The MT5C6408, 8K x 8 SRAM, employs high-speed, low-power CMOS technology, eliminating the need for clocks or refreshing. These SRAM’s have equal access and cycle times. For flexibility in high-speed memory applications, Austin Semiconductor offers dual chip enables (CE1\, CE2) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH. Reading is accomplished when WE\ and CE2 remain HIGH and CE1\ and OE\ go LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. These devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. No. 108 No. 204 No. 302 L *Electrical characteristics identical to those provided for the 45ns access devices. For more products and information please visit our web site at www.austinsemiconductor.com MT5C6408 Rev. 3.0 2/01 28 27 26 25 24 23 22 21 20 19 18 17 16 15 28-Pin Flat Pack (F) • Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT • 2V data retention/low power 1 2 3 4 5 6 7 8 9 10 11 12 13 14 DQ6 DQ5 DQ4 DQ3 Vss DQ2 DQ1 NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss FEATURES • Package(s) Ceramic DIP (300 mil) Ceramic LCC Ceramic Flatpack A6 A7 A12 NC Vcc WE\ CE2\ • SMD 5962-38294 • MIL-STD-883 28-Pin LCC (EC) Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM MT5C6408 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM VCC I/O CONTROL DQ8 ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 Vss 65,536-BIT MEMORY ARRAY DQ1 CE1\ CE2 COLUMN DECODER OE\ WE\ A8 A9 A10 A11 A12 POWER DOWN TRUTH TABLE MODE STANDBY STANDBY READ READ WRITE MT5C6408 Rev. 3.0 2/01 CE1\ H X L L L CE2 X L H H H WE\ X X H H L OE\ X X L H X DQ POWER HIGH-Z STANDBY HIGH-Z STANDBY Q ACTIVE HIGH-Z ACTIVE D ACTIVE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM MT5C6408 Austin Semiconductor, Inc. *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ABSOLUTE MAXIMUM RATINGS* Voltage on any Input or DQ Relative to Vss........-0.5V to +7.0V Voltage on Vcc Supply Relative to Vss.................-0.5V to +7.0V Storage Temperature….........................................-65oC to +150oC Power Dissipation......................................................................1W Max Junction Temperature..................................................+175°C Lead Temperature (soldering 10 seconds)........................+260oC Short Circuit Output Current................................................50mA ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current CONDITIONS 0V ≤ VIN ≤ Vcc Output(s) disabled 0V < VOUT < Vcc IOH = -4.0mA IOL = 8.0mA Output Leakage Current Output High Voltage Output Low Voltage PARAMETER Power Supply Current: Operating Power Supply Current: Standby SYMBOL VIH VIL IL I MIN 2.2 -0.5 -10 MAX Vcc+0.5 0.8 10 -10 2.4 10 µA 0.4 V V ILO VOH VOL UNITS V V µA NOTES 1 1, 2 1 1 CONDITIONS CE\ < VIL; VCC = MAX f = MAX = 1/tRC (MIN) Output Open SYM -12 -15 MAX -20 -25 -35 -45 Icc 180 170 160 155 155 145 mA CE\ > VIH; All Other Inputs < VIL or > VIH, VCC = MAX f = 0 Hz ISBTSP 40 40 40 40 40 40 mA ISBTLP 30 30 30 30 30 30 mA CE\ > (VCC -0.2); VCC = MAX All Other Inputs < 0.2V or > (VCC - 0.2V), f = 0 Hz ISBCSP 20 20 20 20 20 20 mA ISBCLP 10 10 10 10 10 10 mA UNITS NOTES 3 CAPACITANCE DESCRIPTION Input Capacitance Output Capacitance MT5C6408 Rev. 3.0 2/01 CONDITIONS o TA = 25 C, f = 1MHz Vcc = 5V SYM MAX UNITS NOTES CI 6 pF 4 CO 7 pF 4 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM MT5C6408 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC; VCC = 5V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z MT5C6408 Rev. 3.0 2/01 -12 -15 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tAOE tLZOE tHZOE 12 tWC tCW tAW tAS tAH tWP tDS tDH 12 10 10 0 0 10 7 0 2 0 tLZWE tHZWE 15 12 12 2 2 20 15 15 0 0 7 8 0 0 0 10 12 0 7 7 0 0 0 10 3 0 0 10 15 25 ns ns ns ns ns ns ns ns ns ns 3 0 0 25 20 0 30 35 30 30 0 0 30 15 5 0 0 40 ns ns ns ns ns ns ns ns ns 45 45 15 15 15 25 20 20 0 0 20 15 0 0 0 45 35 35 15 15 15 20 15 15 0 0 15 12 0 0 0 35 25 25 15 15 10 15 13 13 0 0 13 10 0 0 0 25 20 20 15 45 40 40 0 0 40 20 5 0 0 7 6, 7 6 7 6, 7 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM MT5C6408 Austin Semiconductor, Inc. AC TEST CONDITIONS Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2 167Ω Q 30pF 167Ω VTH = 1.73V Q VTH = 1.73V 5pF Fig. 1 Output Load Equivalent Fig. 2 Output Load Equivalent allowing for actual tester RC time constant. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE and tHZOE is less than tLZOE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enables are held in their active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = Read Cycle Time. 12. CE2 timing is the same as CE1\ timing. The waveform is inverted. 13. Chip enable (CE1\, CE2) and write enable (WE\) can initiate and terminate a WRITE cycle. NOTES 1. 2. 3. All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV typical from steady state voltage, DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION CONDITIONS VCC for Retention Data SYM MIN MAX UNITS NOTES VDR 2 --- V 300 µA --- ns 4 ns 4, 11 CE\ > (VCC - 0.2V) Data Retention Current VIN > (VCC - 0.2V) or < 0.2V VCC = 2V Chip Deselect to Data Retention Time Operation Recovery Time ICCDR tCDR 0 tR tRC LOW Vcc DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V VDR > 2V t CDR CE\ VIH VIL 1234 123456789 123 123456789 123 1234 123456789 123 1234 123456789 123 1234 4.5V tR VDR 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 123 123 123 123 DON’T CARE 1234 1234 1234 1234UNDEFINED MT5C6408 Rev. 3.0 2/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM MT5C6408 Austin Semiconductor, Inc. READ CYCLE NO. 1 8, 9 ttRC RC ADDRESS VALID ttAA AA ttOH OH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10, 12 ttRC RC CE\ ttAOE AOE t HZOE tHZOE tLZOE tLZOE OE\ ttLZCE LZCE tACE tACE tHZCE tHZCE DQ DATA VALID ttPU PU ttPD PD Icc 1234 1234 1234DON’T CARE 1234 1234 1234 1234 UNDEFINED MT5C6408 Rev. 3.0 2/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM MT5C6408 Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12 (Chip Enabled Controlled) t WC tWC ADDRESS tAW tAW ttAS AS t AH tAH tCW tCW CE\ 1234567890123456789012 1 1 WE\ 1234567890123456789012 t WP tWP1 1123456789012345678901234567890121234567890 1123456789012345678901234567890121234567890 t DH tDH ttDS DS DQ D DATA VAILD Q HIGH Z WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled) tWC tWC ADDRESS tAW tAW 12345678901234567 121 12345678901234567 12 121 CE\ 12345678901234567 ttAS AS WE\ ttAH AH tCW tCW 12345678901234567890123 1 1212345678901234567890123 112345678901234567890123 t WP tWP1 123456789 123456789 123456789 tDS DQ D t DH tDH DATA VALID Q HIGH-Z 1234 1234 1234DON’T CARE 1234 12345 12345 12345 12345UNDEFINED NOTE: Output enable (OE\) is inactive (HIGH). MT5C6408 Rev. 3.0 2/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM MT5C6408 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #108 (Package Designator C) SMD 5962-38294, Case Outline Z D S2 A Q L E S1 b2 e b eA c SMD SPECIFICATIONS MIN MAX SYMBOL A --0.225 b 0.014 0.026 b2 0.045 0.065 c 0.008 0.018 D --1.485 E 0.240 0.310 eA 0.300 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.070 S1 0.005 --S2 0.005 --NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6408 Rev. 3.0 2/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM MT5C6408 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #204 (Package Designator EC) SMD 5962-38294, Case Outline U D1 B2 D2 L2 e E3 E E1 E2 h x 45o D L hx45o B1 D3 A A1 SYMBOL A A1 B1 B2 D D1 D2 D3 E E1 E2 E3 e h L L2 SMD SPECIFICATIONS MIN MAX 0.060 0.075 0.050 0.065 0.022 0.028 0.072 REF 0.342 0.358 0.200 BSC 0.100 BSC --0.358 0.540 0.560 0.400 BSC 0.200 BSC --0.558 0.050 BSC 0.040 REF 0.045 0.055 0.075 0.095 NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6408 Rev. 3.0 2/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM MT5C6408 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #302 (Package Designator F) SMD 5962-38294, Case Outline M e b D S Top View E L A c Q E2 E3 SYMBOL A b c D E E2 E3 e L Q S SMD SPECIFICATIONS MIN MAX 0.045 0.115 0.015 0.019 0.004 0.009 --0.640 0.350 0.420 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 0.000 --- NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches. MT5C6408 Rev. 3.0 2/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM MT5C6408 Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: MT5C6408C-25L/XT Device Number EXAMPLE: MT5C6408EC-15L/IT Package Speed Options** Process Type ns MT5C6408 C MT5C6408 MT5C6408 MT5C6408 Device Number MT5C6408 Package Speed Options** Process Type ns -12 L /* EC -12 L /* C -15 L /* MT5C6408 C -20 L /* MT5C6408 EC -15 L /* EC -20 L /* C -25 L /* MT5C6408 EC -25 L /* MT5C6408 C -35 L /* MT5C6408 EC -35 L /* MT5C6408 C -45 L /* MT5C6408 EC -45 L /* MT5C6408 C -55 L /* MT5C6408 EC -55 L /* MT5C6408 C -70 L /* MT5C6408 EC -70 L /* EXAMPLE: MT5C6408F-55/883C Device Number Package Speed Options** Process Type ns MT5C6408 F -12 L /* MT5C6408 F -15 L /* MT5C6408 F -20 L /* MT5C6408 F -25 L /* MT5C6408 F -35 L /* MT5C6408 F -45 L /* MT5C6408 F -55 L /* MT5C6408 F -70 L /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing -40oC to +85oC -55oC to +125oC -55oC to +125oC ** OPTIONS L = 2V Data Retention/Low Power MT5C6408 Rev. 3.0 2/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM Austin Semiconductor, Inc. MT5C6408 ASI TO DSCC PART NUMBER CROSS REFERENCE* ASI Package Designator EC ASI Package Designator C ASI Part # MT5C6808C-12/883C MT5C6808C-12L/883C MT5C6808C-20/883C MT5C6808C-20L/883C MT5C6808C-25/883C MT5C6808C-25L/883C MT5C6808C-35/883C MT5C6808C-35L/883C MT5C6808C-45/883C MT5C6808C-45L/883C MT5C6808C-55/883C MT5C6808C-55L/883C MT5C6808C-70/883C SMD Part # 5962-3829447MZX 5962-3829446MZX 5962-3829458MZA 5962-3829457MZA 5962-3829456MZA 5962-3829455MZA 5962-3829454MZA 5962-3829453MZA 5962-3829452MZA 5962-3829451MZA 5962-3829450MZA 5962-3829449MZA 5962-3829448MZA ASI Part # MT5C6808EC-12/883C MT5C6808EC-12L/883C MT5C6808EC-20/883C MT5C6808EC-20L/883C MT5C6808EC-25/883C MT5C6808EC-25L/883C MT5C6808EC-35/883C MT5C6808EC-35L/883C MT5C6808EC-45/883C MT5C6808EC-45L/883C MT5C6808EC-55/883C MT5C6808EC-55L/883C MT5C6808EC-70/883C SMD Part # 5962-3829447MUX 5962-3829446MUX 5962-3829458MUA 5962-3829457MUA 5962-3829456MUA 5962-3829455MUA 5962-3829454MUA 5962-3829453MUA 5962-3829452MUA 5962-3829451MUA 5962-3829450MUA 5962-3829449MUA 5962-3829448MUA ASI Package Designator F ASI Part # MT5C6808F-12/883C MT5C6808F-12L/883C MT5C6808F-20/883C MT5C6808F-20L/883C MT5C6808F-25/883C MT5C6808F-25L/883C MT5C6808F-35/883C MT5C6808F-35L/883C MT5C6808F-45/883C MT5C6808F-45L/883C MT5C6808F-55/883C MT5C6808F-55L/883C MT5C6808C-70/883C SMD Part # 5962-3829447MMX 5962-3829446MMX 5962-3829458MMA 5962-3829457MMA 5962-3829456MMA 5962-3829455MMA 5962-3829454MMA 5962-3829453MMA 5962-3829452MMA 5962-3829451MMA 5962-3829450MMA 5962-3829449MMA 5962-3829448MZA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C6408 Rev. 3.0 2/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12