@vic SOT-23 Plastic-Encapsulate Transistors AV9015LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0. 4 2. 9 2. 4 1. 3 0. 95 0.2 1. 9 PCM: 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA DC current gain hFE(1) VCE=-5V, IC= -1mA Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V fT Transition frequency VCE=-5V, IC= -10mA f=30MHz 200 1000 150 MHz CLASSIFICATION OF hFE(1) Rank Range DEVICE MARKING L H 200-450 450-1000 S9015LT1=M6 Copyright @vic Electronics Corp. Website http://www.avictek.com