BCDSEMI AP2127_09

Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
General Description
Features
The AP2127 Series are positive voltage regulator ICs
fabricated by CMOS process.
·
·
·
The AP2127 Series have features of low dropout
voltage, low noise, high output voltage accuracy, and
low current consumption which make them ideal for
use in various battery-powered devices.
·
·
AP2127 has 1.0V, 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V,
3.3V, 4.2V, 4.75V, 5.2V fixed voltage versions and
0.8V to 5.5V adjustable voltage versions.
AP2127 series are available in SOT-23-5 Package.
AP2127
Wide Operating Voltage: 2.5V to 6V
High Output Voltage Accuracy: ±2%
High Ripple Rejection:
68dB@ f=1kHz, 54dB@ f=10kHz
Low Standby Current: 0.1µA
Low Dropout Voltage: [email protected] for
VOUT=3.3V, [email protected] for VOUT=5.2V
·
·
Low Quiescent Current: 60µA Typical
Low Output Noise: 60µ[email protected]=0.8V
·
·
·
Short Current Limit: 50mA
Over Temperature Protection
Compatible with Low ESR Ceramic Capacitor:
1µF for CIN and COUT
·
·
·
Excellent Line/Load Regulation
Soft Start Time: 50µs
Auto Discharge Resistance: RDS(ON)=60Ω
Applications
·
·
·
Datacom
Notebook Computers
Mother Board
SOT-23-5
Figure 1. Package Type of AP2127
Oct. 2009 Rev. 1.3
BCD Semiconductor Manufacturing Limited
1
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Pin Configuration
K Package
(SOT-23-5)
VIN
1
GND
2
Shutdown
3
5
VOUT
4
NC/ADJ
Figure 2. Pin Configuration of AP2127 (Top View)
Functional Block Diagram
SHUTDOWN
Shutdown
and
Logic Control
VIN
VREF
MOS Driver
Current Limint
And
Thermal
Protection
VOUT
GND
Figure 3. Functional Block Diagram of AP2127 for Fixed Version
Oct. 2009 Rev. 1.3
BCD Semiconductor Manufacturing Limited
2
Data Sheet
Preliminary
Datasheet LOW NOISE CMOS LDO REGULATOR
300mA HIGH
SPEED, EXTREMELY
AP2127
Functional Block Diagram (Continued)
SHUTDOWN
Shutdown
and
Logic Control
VIN
VREF
MOS Driver
Current Limint
And
Thermal
Protection
VOUT
ADJ
GND
Figure 4. Functional Block Diagram of AP2127 for Adjustable Version
Oct. 2009 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
3
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Ordering Information
AP2127
G1: Green
Circuit Type
TR: Tape and Reel
ADJ: ADJ Output
1.0: Fixed Output 1.0V
1.2: Fixed Output 1.2V
1.5: Fixed Output 1.5V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
2.8: Fixed Output 2.8V
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
4.2: Fixed Output 4.2V
4.75: Fixed Output 4.75V
5.2: Fixed Output 5.2V
Package
K: SOT-23-5
Package
Temperature Range
SOT-23-5
-40 to 85oC
Part Number
Marking ID
Packing Type
AP2127K-ADJTRG1
GEH
Tape & Reel
AP2127K-1.0TRG1
GEG
Tape & Reel
AP2127K-1.2TRG1
GE1
Tape & Reel
AP2127K-1.5TRG1
GEP
Tape & Reel
AP2127K-1.8TRG1
GEQ
Tape & Reel
AP2127K-2.5TRG1
GER
Tape & Reel
AP2127K-2.8TRG1
GES
Tape & Reel
AP2127K-3.0TRG1
GHF
Tape & Reel
AP2127K-3.3TRG1
GET
Tape & Reel
AP2127K-4.2TRG1
GEU
Tape & Reel
AP2127K-4.75TRG1
GEZ
Tape & Reel
AP2127K-5.2TRG1
GEW
Tape & Reel
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Oct. 2009 Rev. 1.3
BCD Semiconductor Manufacturing Limited
4
Data Sheet
Preliminary
Datasheet LOW NOISE CMOS LDO REGULATOR
300mA HIGH
SPEED, EXTREMELY
AP2127
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Shutdown Input Voltage
VCE
-0.3 to VIN+0.3
V
Output Current
IOUT
450
mA
TA
150
oC
TSTG
-65 to 150
oC
TLEAD
260
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
o
C
Thermal Resistance
θJA
250
oC/W
ESD (Human Body Model)
ESD
6000
V
ESD (Machine Model)
ESD
250
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
2.5
6
V
Operating Junction Temperature Range
TA
-40
85
oC
Oct. 2009 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Electrical Characteristics
(VIN=2.5V (for 0.8V to 1.8V voltage versions), VIN=VOUT+1V (for 2.5V to 4.75V voltage versions), [email protected]=5.2V,
TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.8
0.816
V
Reference Voltage
VREF
VIN=VOUT+1V
1mA≤IOUT≤300mA
0.784
Output Voltage
VOUT
VIN=VOUT+1V
1mA≤IOUT≤300mA
98%×
VOUT
102%×
VOUT
V
2.5
6
V
Input Voltage
VIN
IOUT(MAX)
VIN-VOUT=1V,
VOUT=0.98×VOUT
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN-VOUT=1V,
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VOUT+0.5V≤VIN≤6V
IOUT=30mA
0.06
%/V
Maximum Output Current
Dropout Voltage
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
Short Current Limit
VDROP
IQ
ISTD
PSRR
(∆VOUT/VOUT)
/∆T
ISHORT
300
400
mA
VOUT=1.0V, IOUT=300mA
1400
1500
VOUT=1.2V, IOUT=300mA
1200
1300
VOUT=1.5V, IOUT=300mA
900
1000
VOUT=1.8V, IOUT=300mA
600
700
VOUT=2.5V, 2.8V, 3.0V, 3.3V,
4.2V, IOUT=300mA
170
300
140
300
60
90
µA
0.1
1.0
µA
VOUT=4.75V and 5.2V,
IOUT=300mA
VIN=VOUT+1V, IOUT=0mA
VIN=VOUT+1V,
VSHUTDOWN in off mode
mV
f=100Hz
AP2127-1.0V to
4.2V, Ripple 1Vp-p f=1kHz
VIN=VOUT+1V
f=10kHz
68
dB
68
dB
54
dB
AP2127-4.75V and f=100Hz
5.2V, Ripple
f=1kHz
0.5Vp-p
VIN=VOUT+1V
f=10kHz
63
dB
63
dB
45
dB
IOUT=30mA, -40oC≤TA≤85oC
±100
ppm/oC
50
mA
VOUT=0V
Oct. 2009 Rev. 1.3
BCD Semiconductor Manufacturing Limited
6
Data Sheet
Preliminary
Datasheet LOW NOISE CMOS LDO REGULATOR
300mA HIGH
SPEED, EXTREMELY
AP2127
Electrical Characteristics (Continued)
(VIN=2.5V (for 0.8V to 1.8V voltage versions), VIN=VOUT+1V (for 2.5V to 4.75V voltage versions), [email protected]=5.2V,
TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.)
Parameter
Soft Start Time
RMS Output Noise
Symbol
Conditions
Min
tSS
VNOISE
o
TA=25 C, 10Hz ≤f≤100kHz,
VOUT=0.8V
Typ
Max
Unit
50
µs
60
µVrms
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
Shutdown Pull Down Resistance
60
Ω
3
MΩ
Thermal Shutdown
165
o
C
Thermal Shutdown Hysteresis
30
o
C
Thermal Resistance
θJC
SOT-23-5
Oct. 2009 Rev. 1. 3
150
o
C/W
BCD Semiconductor Manufacturing Limited
7
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Typical Performance Characteristics
1.010
IOUT=10mA
1.009
1.008
IOUT=300mA
1.007
VIN=2.5V
1.006
VOUT=1.0V
IOUT=10mA
IOUT=150mA
3.338
IOUT=300mA
3.336
Output Voltage (V)
Output Voltage (V)
3.340
IOUT=150mA
1.005
1.004
1.003
1.002
VIN=4.3V
VOUT=3.3V
3.334
3.332
3.330
3.328
3.326
1.001
3.324
1.000
-40
-20
0
20
40
60
80
100
120
-40
-20
0
o
Case Temperature ( C)
20
40
60
80
100
120
o
Case Temperature ( C)
Figure 5. Output Voltage vs. Case Temperature
Figure 6. Output Voltage vs. Case Temperature
5.275
5.270
IOUT=10mA
5.265
IOUT=150mA
5.255
IOUT=300mA
0.8
VIN=6V, VOUT=5.2V
Output Voltage (V)
Output Voltage (V)
5.260
1.0
5.250
5.245
5.240
5.235
0.6
0.4
IOUT=0
0.2
IOUT=300mA
5.230
o
0.0
5.225
-40
TC=25 C
-20
0
20
40
60
80
100
120
0.0
o
Case Temperature ( C)
VOUT=1.0V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Figure 8. Output Voltage vs. Input Voltage
Figure 7. Output Voltage vs. Case Temperature
Oct. 2009 Rev. 1.3
BCD Semiconductor Manufacturing Limited
8
Data Sheet
Preliminary
Datasheet LOW NOISE CMOS LDO REGULATOR
300mA HIGH
SPEED, EXTREMELY
AP2127
Typical Performance Characteristics (Continued)
6.0
3.5
IOUT=0
5.5
IOUT=300mA
5.0
3.0
o
TC=25 C, VOUT=5.2V
4.5
Output Voltage (V)
Output Voltage (V)
2.5
2.0
1.5
1.0
IOUT=0
0.5
3.5
3.0
2.5
2.0
1.5
1.0
IOUT=300mA
o
0.5
TC=25 C, VOUT=3.3V
0.0
4.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
1
2
3
4
5
6
Input Voltage (V)
Input Voltage (V)
Figure 9. Output Voltage vs. Input Voltage
Figure 10. Output Voltage vs. Input Voltage
3.5
1.0
3.0
Output Voltage (V)
Output Voltage (V)
0.8
0.6
0.4
o
TC=-40 C
o
TC=25 C
0.2
o
TC=85 C
VIN=2.5V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
2.0
1.5
o
TC=-40 C
1.0
o
TC=25 C
o
TC=85 C
0.5
VOUT=1.0V
0.0
2.5
VIN=4.3V, VOUT=3.3V
0.0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0.50
Output Current (A)
Output Current (A)
Figure 12. Output Voltage vs. Output Current
Figure 11. Output Voltage vs. Output Current
Oct. 2009 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
9
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Typical Performance Characteristics (Continued)
6
3.5
5
2.5
Output Voltage (V)
Output Voltage (V)
3.0
2.0
1.5
VIN=3.8V
VIN=4.3V
1.0
3
2
o
TC=-40 C
o
VIN=6V
TC=25 C
1
o
TC=25 C, VOUT=3.3V
0.5
4
o
TC=85 C
VIN=6V, VOUT=5.2V
0
0.0
0.0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0.1
0.2
0.3
0.4
0.5
Output Current (A)
Output Current (A)
Figure 13. Output Voltage vs. Output Current
Figure 14. Output Voltage vs. Output Current
80
80
70
70
Quiescent Current (µA)
Quiescent Current (µA)
60
50
40
30
o
TC=-40 C
20
o
TC=25 C
o
TC=85 C
10
-10
VOUT=1.0V
1
2
3
4
5
50
40
30
o
TC=-40 C
20
o
TC=25 C
10
IOUT=0
0
60
o
TC=85 C
IOUT=0, VOUT=3.3V
0
6
0
Input Voltage (V)
1
2
3
4
5
6
Input Voltage (V)
Figure 15. Quiescent Current vs. Input Voltage
Figure 16. Quiescent Current vs. Input Voltage
Oct. 2009 Rev. 1.3
BCD Semiconductor Manufacturing Limited
10
Data Sheet
Preliminary
Datasheet LOW NOISE CMOS LDO REGULATOR
300mA HIGH
SPEED, EXTREMELY
AP2127
Typical Performance Characteristics (Continued)
120
80
o
TC=-40 C
110
70
o
TC=25 C
Quiescent Current (µA)
Quiescent Current (µA)
o
60
50
40
o
TC=-40 C
30
o
TC=25 C
20
o
TC=85 C
10
0
IOUT=0, VOUT=5.2V
0
1
2
3
4
5
100
TC=85 C
VIN=2.5V
VOUT=1.0V
90
80
70
60
6
0.00
0.05
0.10
Input Voltage (V)
0.15
0.20
0.25
0.30
Output Current (A)
Figure 17. Quiescent Current vs. Input Voltage
Figure 18. Quiescent Current vs. Output Current
115
110
o
110
TC=-40 C
105
TC=25 C
100
105
o
TC=85 C
VIN=4.3V, VOUT=3.3V
95
90
85
80
75
o
TC=25 C
100
TC=85 C
VIN=6V, VOUT=5.2V
95
90
85
80
75
70
65
0.00
o
TC=-40 C
o
Quiescent Current (µA)
Quiescent Current (µA)
o
0.05
0.10
0.15
0.20
0.25
70
0.00
0.30
Output Current (A)
0.05
0.10
0.15
0.20
0.25
0.30
Output Current (A)
Figure 19. Quiescent Current vs. Output Current
Figure 20. Quiescent Current vs. Output Current
Oct. 2009 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
11
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Typical Performance Characteristics (Continued)
64
VIN=2.5V
73
IOUT=0
62
72
Quiescent Current (µA)
Quiescent Current (µA)
VOUT=1.0V
60
58
56
54
71
70
69
68
IOUT=0
52
-40
67
-20
0
20
40
60
80
100
120
-40
VIN=4.3V, VOUT=3.3V
-20
0
o
60
80
100
120
Figure 22. Quiescent Current vs. Case Temperature
80
0.26
79
IOUT=0
0.24
78
VIN=6V,VOUT=5.2V
0.22
77
0.20
76
0.18
Dropout Voltage (V)
Quiescent Current (µA)
40
Case Temperature ( C)
Figure 21. Quiescent Current vs. Case Temperature
75
74
73
72
71
0.16
o
TC=-40 C
o
TC=25 C
o
TC=85 C
VOUT=3.3V
0.14
0.12
0.10
0.08
0.06
70
0.04
69
68
-40
20
o
Case Temperature ( C)
0.02
-20
0
20
40
60
80
100
0.00
0.00
120
o
Case Temperature ( C)
0.05
0.10
0.15
0.20
0.25
0.30
Output Current (A)
Figure 23. Quiescent Current vs. Case Temperature
Figure 24. Dropout Voltage vs. Output Current
Oct. 2009 Rev. 1.3
BCD Semiconductor Manufacturing Limited
12
Data Sheet
Preliminary
Datasheet LOW NOISE CMOS LDO REGULATOR
300mA HIGH
SPEED, EXTREMELY
AP2127
Typical Performance Characteristics (Continued)
0.24
0.18
Dropout Voltage (V)
0.14
0.12
0.22
TC=-40 C
o
0.20
o
0.18
TC=25 C
TC=85 C
VOUT=5.2V
0.16
Dropout Voltage (V)
0.16
o
0.10
0.08
0.06
0.14
0.12
0.10
0.04
0.08
IOUT=10mA
0.06
IOUT=150mA
IOUT=300mA
0.04
0.02
0.00
0.00
VOUT=3.3V
0.02
0.05
0.10
0.15
0.20
0.25
0.00
0.30
-40
-20
40
60
80
100
Figure 26. Dropout Voltage vs. Case Temperature
0.18
2.0
0.16
1.8
0.14
1.6
IOUT=10mA
0.12
Power Dissipation (W)
Dropout Voltage (V)
20
Case Temperature ( C)
Figure 25. Dropout Voltage vs. Output Current
IOUT=150mA
IOUT=300mA
0.10
VOUT=5.2V
0.08
0.06
0.04
VOUT=1.0V
No heatsink
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.02
0.00
-40
0
o
Output Current (A)
-20
0
20
40
60
0.0
-40
80
-20
0
20
40
60
80
100
120
o
Case Temperature( C)
o
Case Temperature ( C)
Figure 27. Dropout Voltage vs. Case Temperature
Figure 28. Power Dissipation vs. Case Temperature
Oct. 2009 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
13
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Typical Performance Characteristics (Continued)
VIN
500mV/div
IOUT
200mA/div
VOUT
50mV/div
VOUT
50mV/div
Figure 29. Line Transient
(Condition: CIN=COUT=1µF, IOUT=10mA,
VIN=2.5V to 3.3V, VOUT=1V)
Figure 30. Load Transient
(Condition: CIN=COUT=1µF,Sew Rate=20mA/µs,
VIN=2.5V, VOUT=1V, IOUT=10mA to 300mA)
IOUT
IOUT
200mA/div
200mA/div
VOUT
50mV/div
VOUT
50mV/div
Figure 32. Load Transient
(Condition: CIN=COUT=1µF,Sew Rate=20mA/µs,
VIN=6V, VOUT=5.2V, IOUT=10mA to 300mA)
Figure 31. Load Transient
(Condition: CIN=COUT=1µF, IOUT=10mA to 300mA,
VIN=4.3V, VOUT=3.3V)
Oct. 2009 Rev. 1.3
BCD Semiconductor Manufacturing Limited
14
Data Sheet
Preliminary
Datasheet LOW NOISE CMOS LDO REGULATOR
300mA HIGH
SPEED, EXTREMELY
AP2127
Typical Performance Characteristics (Continued)
90
IOUT=10mA
80
70
IOUT=300mA
VOUT=1V,Ripple=1VPP
70
60
50
50
PSRR (dB)
PSRR (dB)
60
40
30
20
40
30
20
IOUT=300mA
10
10
0
IOUT=10mA
100
1000
10000
100000
VOUT=3.3V, Ripple=1VPP
100
Frequency (Hz)
1k
10k
100k
Frequency (Hz)
Figure 33. PSSR vs. Frequency
(Conditions: CIN=COUT=1µF, VIN=2.5V, VOUT=1V
Ripple=1VPP)
Figure 34. PSSR vs. Frequency
(Conditions: CIN=COUT=1µF, VIN=4.3V, VOUT=3.3V
Ripple=1VPP)
70
60
PSRR (dB)
50
40
30
IOUT=10mA
20
IOUT=300mA
VOUT=5.2V, Ripple=0.5VPP
10
100
1k
10k
100k
Frequency (Hz)
Figure 35. PSSR vs. Frequency
(Conditions: CIN=COUT=1µF, VIN=6V, VOUT=5.2V
Ripple=0.5VPP)
Oct. 2009 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
15
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2127
Typical Application
VIN
VOUT
VIN
VOUT
AP2127
Shutdown
R1
ADJ
R2
COUT
1µF
GND
CIN
1µF
VOUT=0.8*(1+R1/R2) V
VOUT
VIN
VIN
VOUT
AP2127
Shutdown
CIN
1µF
COUT
1µF
GND
For 1.0V to5.2V fixed voltage versions
Figure 36. Typical Application of AP2127
Oct. 2009 Rev. 1.3
BCD Semiconductor Manufacturing Limited
16
Data Sheet
Preliminary
Datasheet LOW NOISE CMOS LDO REGULATOR
300mA HIGH
SPEED, EXTREMELY
AP2127
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
MAX
1.450(0.057)
0.950(0.037)
TYP
0.100(0.004)
0.900(0.035)
1.300(0.051)
Oct. 2009 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
17
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE
IMPORTANT
NOTICE
BCD Semiconductor
BCD
Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products or
or specifispecifications herein.
cations
herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular
purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of
any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey any
any license
license under
under its
its patent
patent rights
rights or
or
other rights
other
rights nor
nor the
the rights
rights of
of others.
others.
MAIN SITE
SITE
MAIN
- Headquarters
BCD
Semiconductor Manufacturing Limited
BCD
Semiconductor
Manufacturing Limited
- Wafer
Fab
No.
1600, Zi
Xing Road,
Shanghai ZiZhu
Science-basedLimited
Industrial Park, 200241, China
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Tel:
Fax: +86-21-24162277
800,+86-21-24162266,
Yi Shan Road, Shanghai
200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL
- Wafer
FabSemiconductor Manufacturing Limited
BCD
Shanghai
SIM-BCD
Semiconductor Manufacturing Co., Ltd.
- IC Design
Group
800 Yi
Shan Road,
Shanghai
200233,
China Corporation
Advanced
Analog
Circuits
(Shanghai)
Tel: +86-21-6485
1491,YiFax:
0008200233, China
8F, Zone B, 900,
Shan+86-21-5450
Road, Shanghai
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
Shanghai
Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Taiwan
Semiconductor
Shenzhen SIM-BCD
Office
Office (Taiwan) Company Limited
Room
E, 5F,
Noble Center,
No.1006,Manufacturing
3rd Fuzhong Road,
Futian
District,Office
Shenzhen,
4F, 298-1,
Guang Road,(Taiwan)
Nei-Hu District,
Taipei,
Shanghai
SIM-BCD
Semiconductor
Co., Ltd.
Shenzhen
BCDRui
Semiconductor
Company
Limited
518026,
China
Taiwan
Advanced
Analog Circuits (Shanghai) Corporation Shenzhen Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel:
+86-755-8826
Tel: +886-2-2656
2808
Room
E, 5F, Noble 7951
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Taiwan
Fax:
+86-755-88267951
7865
Fax: +886-2-2656
28062808
Tel: +86-755-8826
Tel: +886-2-2656
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
USA Office
BCD Office
Semiconductor Corp.
USA
30920Semiconductor
Huntwood Ave.Corporation
Hayward,
BCD
CA 94544,
USA Ave. Hayward,
30920
Huntwood
Tel :94544,
+1-510-324-2988
CA
U.S.A
Fax:: +1-510-324-2988
+1-510-324-2788
Tel
Fax: +1-510-324-2788