BCDSEMI AP2129_09

Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
General Description
Features
The AP2129 is a 300mA, positive Voltage regulator
ICs fabricated by CMOS process. The AP2129
provides two kinds of output voltage operation modes
for setting the output voltage. Fixed output voltage
mode senses the output voltage on VOUT, adjustable
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output voltage mode needs two resistors as a voltage
divider
The AP2129 Series have features of low dropout
voltage, low noise, high output voltage accuracy, and
low current consumption which make them ideal for
use in various battery-powered devices.
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AP2129 has 1.0V, 1.2V, 3.3V fixed voltage version and
0.8V to 4.5V adjustable voltage version.
AP2129
Wide Operating Voltage: 1.8V to 6V
High Output Voltage Accuracy: ±2%
High Ripple Rejection:
65dB@ f=1kHz, 45dB@ f=10kHz
Low Standby Current: 0.1µA
Low Quiescent Current: 60µA Typical
Low Output Noise: 60µVrms
Short Current Limit: 50mA
Over Temperature Protection
Compatible with Low ESR Ceramic Capacitor:
1µF for CIN and COUT
Excellent Line/Load Regulation
Soft Start Time: 50µs
Auto Discharge Resistance: RDS(ON)=60Ω
Applications
AP2129 series are available in SOT-23-5 Package.
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Datacom
Notebook Computers
Mother Board
SOT-23-5
Figure 1. Package Type of AP2129
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Pin Configuration
K Package
(SOT-23-5)
Shutdown
1
GND
2
VIN
3
5
ADJ/NC
4
VOUT
Figure 2. Pin Configuration of AP2129 (Top View)
Functional Block Diagram
UVLO &
Shutdown
Logic
SHUTDOWN
VIN
Foldback
Current Limit
Thermal
Shutdown
VOUT
3MΩ
NC
VREF
GND
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Functional Block Diagram (Continued)
UVLO &
Shutdown
Logic
SHUTDOWN
VIN
Foldback
Current Limit
Thermal
Shutdown
VOUT
3MΩ
ADJ
VREF
GND
Figure 3. Functional Block Diagram of AP2129
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Ordering Information
AP2129
G1: Green
Circuit Type
TR: Tape and Reel
Package
ADJ: ADJ Output
1.0: Fixed Output 1.0V
1.2: Fixed Output 1.2V
3.3: Fixed Output 3.3V
K: SOT-23-5
Product
AP2129
Package
SOT-23-5
Temperature
Range
-40 to 85oC
Part Number
Marking ID Packing Type
AP2129K- ADJTRG1
GEJ
Tape & Reel
AP2129K-1.0TRG1
GEK
Tape & Reel
AP2129K-1.2TRG1
GEL
Tape & Reel
AP2129K-3.3TRG1
GEM
Tape & Reel
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Shutdown Input Voltage
VCE
-0.3 to VIN+0.3
V
Output Current
IOUT
450
mA
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
Thermal Resistance
θJA
250
oC/W
ESD (Human Body Model)
ESD
6000
V
ESD (Machine Model)
ESD
200
V
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
o
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
1.8
6
V
TJ
-40
85
oC
Operating Junction Temperature Range
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
5
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Electrical Characteristics
AP2129-1.0/1.2/3.3 Electrical Characteristics
(CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
VIN=VOUT+1V, (Note 2)
1mA≤IOUT≤300mA
VIN
Min
Max
Unit
98%*
VOUT
102%*
VOUT
V
1.8
6
V
IOUT(MAX)
Typ
450
mA
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN-VOUT=1V, (Note 2)
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VOUT+0.5V≤VIN≤6V, (Note 2)
IOUT=30mA
0.06
%/V
Dropout Voltage
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
VDROP
IQ
ISTD
PSRR
(∆VOUT/VOUT)
/∆T
VOUT=1.0V, IOUT=300mA
1400
1500
VOUT=1.2V, IOUT=300mA
1200
1300
VOUT=3.3V, IOUT=300mA
170
300
VIN=VOUT+1V, IOUT=0mA
60
90
µA
VIN=VOUT+1V,
VSHUTDOWN in off mode
0.1
1.0
µA
Ripple 1Vp-p
VIN=VOUT+1V
f=100Hz
65
dB
f=1KHz
65
dB
f=10KHz
45
dB
±100
ppm/oC
400
mA
IOUT=30mA, -40oC≤TJ≤85oC
Output Current Limit
ILIMIT
VIN-VOUT=1V,
VOUT=0.98*VOUT
Short Current Limit
ISHORT
VOUT=0V
Soft Start Time
RMS Output Noise
tUP
VNOISE
mV
TA=25oC, 10Hz ≤f≤100kHz
50
mA
50
µs
60
µVrms
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
Shutdown Pull Down Resistance
60
Ω
3
MΩ
Thermal Shutdown
165
Thermal Shutdown Hysteresis
30
Thermal Resistance
θJC
SOT-23-5
150
o
C
oC
o
C/W
Note 2: VIN=1.8V for 1.0 and 1.2 version
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Electrical Characteristics (Continued)
AP2129-ADJ Electrical Characteristics
(CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Reference Voltage
Input Voltage
Maximum Output Current
Symbol
VREF
Conditions
VIN=1.8V
1mA≤IOUT≤300mA
VIN
Min
Typ
Max
Unit
0.748
0.8
0.816
V
6
V
1.8
IOUT(MAX)
450
mA
Load Regulation
∆VOUT
/(∆IOUT*VOUT)
VIN-VOUT=1V,
1mA≤IOUT≤300mA
0.6
%/A
Line Regulation
∆VOUT
/(∆VIN*VOUT)
VOUT+0.5V≤VIN≤6V
IOUT=30mA
0.06
%/V
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
IQ
ISTD
PSRR
(∆VOUT/VOUT)
/∆T
Output Current Limit
ILIMIT
Short Current Limit
ISHORT
Soft Start Time
RMS Output Noise
VIN=VOUT+1V, IOUT=0mA
60
90
µA
VIN=VOUT+1V,
VSHUTDOWN in off mode
0.1
1.0
µA
Ripple 1Vp-p
VIN=VOUT+1V
f=100Hz
65
dB
f=1KHz
65
dB
f=10KHz
45
dB
±100
ppm/oC
400
mA
50
mA
50
µs
60
µVrms
IOUT=30mA, -40oC≤TJ≤85oC
VOUT=0V
tUP
VNOISE
o
TA=25 C, 10Hz ≤f≤100kHz
Shutdown "High" Voltage
Shutdown input voltage "High"
1.5
6
V
Shutdown "Low" Voltage
Shutdown input voltage "Low"
0
0.4
V
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
Shutdown Pull Down Resistance
60
Ω
3
MΩ
Thermal Shutdown
165
o
C
Thermal Shutdown Hysteresis
30
o
C
Thermal Resistance
θJC
SOT-23-5
150
Oct. 2009 Rev. 1.1
oC/W
BCD Semiconductor Manufacturing Limited
7
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics
100
VOUT=0.8V
90
3.5
No Load
80
3.0
o
Tc=25 C
Supply Current(µA)
70
Output Voltage (V)
2.5
2.0
1.5
o
T C=-40 C
1.0
50
40
30
o
T C=25 C
20
o
T C=125 C
0.5
10
VIN=4.4V
0.0
60
0
50
100
150
200
250
300
350
400
450
0
0.0
500
0.5
1.0
1.5
2.0
Output Current (mA)
Figure 4. Output Voltage vs. Output Current
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Figure 5. Supply Current vs. input Current
120
60
VOUT=0.8V
110
VOUT=0.8V
58
VIN=1.8V
VIN=1.8V
No Load
56
o
TC=25 C
100
54
Supply Current(µA)
Supply Current (µA)
2.5
Input Voltage(V)
90
80
70
60
52
50
48
46
44
50
40
0.00
42
0.03
0.06
0.09
0.12
0.15
0.18
0.21
0.24
0.27
40
-40
0.30
Output Current(A)
-20
0
20
40
60
80
o
Case Temperature( C)
Figure 6. Supply Current vs. Output Current
Figure 7. Supply Current vs. Case Temperature
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
0.90
VOUT=0.8V
320
IO=150mA
0.86
Ouput short to GND
240
VOUT=0.8V
0.84
Output Voltage(V)
Short Current (mA)
280
IO=10mA
0.88
VIN=1.8V
200
160
120
VIN=1.8V
0.82
0.80
0.78
0.76
80
0.74
40
0
0.72
-30
-15
0
15
30
45
60
0.70
75
-30
-15
0
o
Case Temperature( C)
0.9
0.8
0.8
0.7
0.7
Output Voltage (V)
Output Voltage (V)
1.0
0.9
0.6
0.5
o
TC=-40 C
o
TC=125 C
o
TC=25 C
VOUT=0.8V
0.2
0.1
45
60
75
Figure 9. Output Voltage vs. Case Temperature
1.0
0.3
30
o
Figure 8. Shot Output vs. Case Temperature
0.4
15
Case Temperature( C)
0.6
0.5
0.4
o
TC=-40 C
o
0.3
TC=25 C
0.2
TC=125 C
o
VOUT=0.8V
0.1
VIN=1.8V
0.0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0.0
0.0
Output Current(A)
No Load
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage(V)
Figure 10. Output Voltage vs. Output Current
Figure 11. Output Voltage vs. Input Voltage
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
9
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
1.0
0.9
Output Voltge (V)
0.8
0.7
IOUT
0.6
0.5
0.4
o
0.3
TC=-40 C
0.2
TC=25 C
o
0.0
VOUT
o
TC=85 C
VOUT=0.8V
0.1
0
1
2
3
4
5
6
Input Voltage (V)
Figure 12. Output Voltage vs. Input Voltage
(IOUT=300mA)
Figure 13. Load Transient
(Conditions: CIN=COUT=1µF, VIN=2.5V, VOUT=0.8V)
IOUT
VIN
VOUT
VOUT
Figure 14. Load Transient
Figure 15. Line Transient
(Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V)
(Conditions: IOUT=30mA, CIN=COUT=1µF,
VIN=2.5 to 3.5V, VOUT=0.8V)
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
10
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
VIN
VOUT
VShutdown
VOUT
Figure 16. Line Transient
Figure 17. Soft Start Time
(Conditions: IOUT=30mA, CIN=COUT=1µF,
(Conditions: IOUT=0mA, CIN=COUT=1µF,
VIN=4 to 5V, VOUT=3.3V)
VShutdown=0 to 2V, VOUT=3.3V)
100
IOUT=10mA
90
IOUT=300mA
80
ripple=1Vpp, COUT=1µF, VOUT=0.8V
PSRR (dB)
70
VOUT
60
50
40
30
VShutdown
20
10
0
100
1000
10000
100000
Frequency (Hz)
Figure 18. Soft Start Time
Figure 19. PSSR vs. Frequency
(Conditions: IOUT=0mA, CIN=COUT=1µF,
VShutdown=0 to 2V, VOUT=0.8V)
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
11
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Performance Characteristics (Continued)
100
2.0
90
IOUT=10mA
1.8
80
IOUT=300mA
1.6
ripple=1Vpp, COUT=1µF, VOUT=3.3V
Power Dissipation (W)
PSRR (dB)
70
60
50
40
30
20
No heatsink
1.4
1.2
1.0
0.8
0.6
0.4
10
0
VOUT=0.8V
0.2
100
1000
10000
0.0
-40
100000
Frequency (Hz)
-20
0
20
40
60
80
100
120
o
Case Temperature( C)
Figure 21. Power Dissipation vs. Case Temperature
Figure 20. PSRR vs. Frequency
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
12
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Typical Application
VOUT
VIN
VIN
VOUT
AP2129
Shutdown
R1
ADJ
R2
CIN
1µF
COUT
1µF
GND
VOUT=0.8*(1+R1/R2) V
VOUT
VIN
VIN
VOUT
AP2129
Shutdown
CIN
1µF
COUT
1µF
GND
VOUT=1.0V, 1.2V, 3.3V
Figure 22. Typical Application of AP2129
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
13
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2129
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
MAX
1.450(0.057)
0.950(0.037)
TYP
0.100(0.004)
0.900(0.035)
1.300(0.051)
Oct. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
14
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