BRIGHT LED ELECTRONICS CORP. BM-10EG58MD SINCE 1981 Features : 1. 1.476 inch (37.5mm) matrix height. 2. Dot size 3.00mm. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Multiplex drive , column anode com. ● Package Dimensions : PIN 1. 37.50(1.476) 23.40(.921) and row cathode com. 7. Multi color available. 8. Categorized for luminous intensity. 9. Stackable vertically and horizontally. + 2.54x10=25.4(1.000) ● 3.0(.118) 8.00(.315) 6.30 0.5 (.248 .020) 0.50(.020) 12.7(.500) ● 1. 2. Description : The BM-10EG58MD is a 37.5mm(1.476") Notes: 1. All dimensions are in millimeters(inches). matrix height 5×8 dot matrix display. 2. Tolerance is ±0.25mm(.01")unless otherwise This product use hi-eff red chips and specified. 3. Specifications are subject to change without green chips, the hi-eff red chips are notice. made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. 3. This product have a black face and white dots. 4. This product doesn't contain restriction substance, comply ROHS standard. ● Internal Circuit Diagram : 佰鴻工業股份有限公司 http://www.brtled.com Ver.1.0 1.1 Page 1 of 3 BRIGHT LED ELECTRONICS CORP. BM-10EG58MD SINCE 1981 ● Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Hi-eff red Green Unit Power Dissipation Per Dot Pd 80 80 mW Forward Current Per Dot IF 30 30 mA IFP (Duty 1/10, 1KHZ) 150 150 mA VR 5 5 V Peak Forward Current Per Dot Reverse Voltage Per Dot ● Operating Temperature Topr -40℃~80℃ - Storage Temperature Tstg -40℃~85℃ - Soldering Temperature (1/16" From Body) Tsol 260℃ For 5 Seconds - Electrical And Optical Characteristics(Ta=25℃) Hi-eff red Parameter Symbol Condition Min. Typ. Max. Unit Forward Voltage Per Dot VF IF=10mA - 1.9 2.5 V Luminous Intensity Per Dot Iv IF=10mA - 9.0 - mcd Reverse Current Per Dot IR VR=5V - - 100 µA Peak Wave Length λp IF=10mA - 640 - nm Dominant Wave Length λd IF=10mA 626 - 636 nm Spectral Line Half-width ∆λ IF=10mA - 40 - nm Min. Typ. Max. Unit Green Parameter Symbol Condition 佰鴻工業股份有限公司 http://www.brtled.com Forward Voltage Per Dot VF IF=10mA - 2.1 2.5 V Luminous Intensity Per Dot Iv IF=10mA - 9.0 - mcd Reverse Current Per Dot IR VR=5V - - 100 µA Peak Wave Length λp IF=10mA - 568 - nm Dominant Wave Length λd IF=10mA 569 - 574 nm Spectral Line Half-width ∆λ IF=10mA - 30 - nm Ver.1.0 Page 2 of 3 BRIGHT LED ELECTRONICS CORP. BM-10EG58MD SINCE 1981 Typical Electro-Optical Characteristics Curves (25℃ Ambient Temperature Unless Otherwise Noted) Fig.1 Relative Radiant Intensity VS. Wavelength (G) (E) 0.5 0 530 Forward Current (mA) 50 560 590 620 Wavelength(nm) Fig.2 Forward Current VS. Forward Voltage Relative Luminous Intensity (@20mA) Relative Radiant Intensity 1.0 (E) (G) 40 30 20 10 0 1 2 3 4 5 3.0 650 3.0 680 710 Fig.3 Relative Luminous Intensity VS. Ambient Temperature 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 Ambient Temperature Ta( C) Forward Voltage (V) Fig.4 Relative Luminous Intensity VS. Forward Current 50 Fig.5 Forward Current Derating Curve VS. Ambient Temperature 佰鴻工業股份有限公司 http://www.brtled.com (G) 2.0 (E) 1.0 0.0 0 10 20 30 40 Forward Current(mA) 50 Forward Current(mA) Relative Luminous Intensity (@20mA) ● 40 30 20 10 0 20 40 60 80 100 120 Ambient Temperature Ta( C) Ver.1.0 Page 3 of 3