CHAMP CMT60N06G

CMT60N06G
N-CHANNEL Logic Level Power MOSFET
APPLICATION
FEATURES
‹
DC motor control
‹
Low ON Resistance
‹
UPS
‹
Low Gate Charge
‹
Class D Amplifier
‹
Peak Current vs Pulse Width Curve
‹
Inductive Switching Curves
VDSS
RDS(ON) Typ.
ID
60V
15.8mΩ
60A
PIN CONFIGURATION
SYMBOL
TO-220
D
SOURCE
DRAIN
GATE
Front View
G
S
1
2
N-Channel MOSFET
3
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current - Continuous Tc = 25℃, [email protected]
- Continuous Tc = 100℃, [email protected]
Symbol
Value
Unit
VDSS
60
V
ID
60
A
ID
43
IDM
241
Gate-to-Source Voltage - Continue
VGS
±20
Total Power Dissipation
PD
150
W
1.0
W/℃
dv/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
℃
Single Pulse Avalanche Energy L=144μH,ID=40 Amps
EAS
500
mJ
Maximum Lead Temperature for Soldering Purposes
TL
300
℃
TPKG
260
℃
IAS
60
A
- Pulsed Tc = 25℃, [email protected] (Note 2)
Derating Factor above 25℃
Peak Diode Recovery dv/dt (Note 3)
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
V
THERMAL RESISTANCE
Symbol
RθJC
Parameter
Junction-to-case
RθJA
Junction-to-ambient
2006/03/07
Rev 1.1
Min
Typ
Max
1.0
Units
℃/W
62
℃/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +175℃
1 cubic foot chamber, free air
Champion Microelectronic Corporation
Page 1
CMT60N06G
N-CHANNEL Logic Level Power MOSFET
ORDERING INFORMATION
Part Number
Package
CMT60N06G
TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT60N06G
Characteristic
Symbol
Min
VDSS
60
Typ
Max
Units
OFF Characteristics
Drain-to-Source Breakdown Voltage
V
(VGS = 0 V, ID = 250 μA)
Breakdown Voltage Temperature Coefficient
ΔVDSS/ΔTJ
0.069
mV/℃
(Reference to 25℃, ID = 250 μA)
Drain-to-Source Leakage Current
IDSS
μA
(VDS = 60 V, VGS = 0 V, TJ = 25℃)
25
(VDS = 48 V, VGS = 0 V, TJ = 150℃)
250
Gate-to-Source Forward Leakage
IGSS
100
nA
IGSS
-100
nA
2.0
3.0
V
15.8
18
(VGS = 20 V)
Gate-to-Source Reverse Leakage
(VGS = -20 V)
ON Characteristics
VGS(th)
Gate Threshold Voltage
1.0
(VDS = VGS, ID = 250 μA)
Static Drain-to-Source On-Resistance
RDS(on)
(Note 4)
(VGS = 10 V, ID = 60A)
Forward Transconductance (VDS = 15 V, ID = 60A)
(Note 4)
mΩ
gFS
36
S
Ciss
1430
Coss
420
pF
pF
Crss
88
pF
(VDS = 30 V, ID = 60 A,
Qg
37.7
VGS = 10 V) (Note 5)
Qgs
8.4
nC
nC
Qgd
9.8
nC
td(on)
12.1
trise
64
ns
ns
td(off)
69
ns
tfall
39
ns
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Gate-to-Source Charge
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Gate-to-Drain (“Miller”) Charge
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 30 V, ID = 60 A,
VGS = 10 V,
RG = 9.1Ω) (Note 5)
Source-Drain Diode Characteristics
Continuous Source Current
IS
60
A
A
Integral pn-diode in MOSFET
(Body Diode)
Pulse Source Current (Body Diode)
ISM
241
Diode Forward On-Voltage
(IS = 60 A, VGS = 0 V)
VSD
1.5
Reverse Recovery Time
(IF = 60A, VGS = 0 V,
trr
55
ns
di/dt = 100A/μs)
Qrr
110
nC
Reverse Recovery Charge
V
Note 1: TJ = +25℃ to +175℃
Note 2: Repetitive rating; pulse width limited by maximum junction temperature.
Note 3: ISD = 60A, di/dt <100A/μs, VDD < BVDSS, TJ = +175℃
Note 4: Pulse width < 250μs; duty cycle<2%
Note 5: Essentially independent of operating temerpature.
2006/03/07
Rev 1.1
Champion Microelectronic Corporation
Page 2
CMT60N06G
N-CHANNEL Logic Level Power MOSFET
2006/03/07
Rev 1.1
Champion Microelectronic Corporation
Page 3
CMT60N06G
N-CHANNEL Logic Level Power MOSFET
2006/03/07
Rev 1.1
Champion Microelectronic Corporation
Page 4
CMT60N06G
N-CHANNEL Logic Level Power MOSFET
2006/03/07
Rev 1.1
Champion Microelectronic Corporation
Page 5
CMT60N06G
N-CHANNEL Logic Level Power MOSFET
PACKAGE DIMENSION
TO-220
A
D
c1
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E1
E
F
φ
A
A1
L1
b
b1
c
c1
D
L
E
E1
e
e1
F
L
b1
e
e1
b
A1
c
L1
φ
Side View
Front View
2006/03/07
Rev 1.1
Champion Microelectronic Corporation
Page 6
CMT60N06G
N-CHANNEL Logic Level Power MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
2006/03/07
Rev 1.1
T E L : +886-2-8692 1591
F A X : +886-2-8692 1596
Champion Microelectronic Corporation
Page 7