CHENMKO ENTERPRISE CO.,LTD 2N7002M1PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.115 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FBPT-723 FEATURE * Small surface mounting type. (FBPT-723) * High density cell design for low RDS(ON). * Suitable for high packing density. 0.5±0.05 1.2±0.05 * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. CONSTRUCTION 1.2±0.05 0.05±0.04 * N-Channel Enhancement 0.84±0.05 0.32±0.05 0.15(REF.) 0.47(REF.) (3) D (3) CIRCUIT (2) 0.28±0.05 (1) G 0.22±0.05 Dimensions in millimeters S (2) Absolute Maximum Ratings (1) 0.23(REF.) 0.25±0.05 FBPT-723 TA = 25°C unless otherwise noted 2N7002M1PT Symbol Parameter VDSS Drain-Source Voltage 60 Units V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous 115 mA PD Maximum Power Dissipation 150 mW TJ,TSTG Operating Temperature Range TSTG Storage Temperature Range 150 °C -55 to 150 °C 625 °C/W Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 2006-12 RATING CHARACTERISTIC CURVES ( 2N7002M1PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 60 Typ Max Units 1 µA 0.5 mA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V V TC=125°C IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V -100 nA 2.5 V Ω ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA 1.2 7.5 VGS = 5.0 V, ID = 50 mA 1.7 7.5 VDS(ON) ID(ON) gFS Drain-Source On-Voltage VDS = VGS, ID = 250 µA 1 VGS = 10 V, ID = 500mA 3.75 VGS = 5.0 V, ID = 50 mA 0.375 V On-State Drain Current VGS = 10 V, VDS = 7.0VDS(on) 500 mA Forward Transconductance VDS = 10 V DS(on), ID = 200 m A 80 mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time toff Turn-Off Time VDS = 25 V, VGS = 0 V, f = 1.0 MHz 50 25 pF 5 VDD = 25 V, RG = 25 Ω, ID = 500 mA, VGS = 10 V, RL = 50 Ω 20 nS 40 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Drain-Source Diode Forward Voltage Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. VGS = 0 V, IS = 200 mA (Note 1) 0.85 1.2 V RATING CHARACTERISTIC CURVES ( 2N7002M1PT ) Typical Electrical Characteristics Figure 2. Capacitance Characteristics Figure 1. Output Characteristics 1.0 60 VG S =1 0 , 7 , 6 , 5 , 4 V 50 C,CAPACITANCE(pF) I D , DRAIN CURRENT (A) 0.8 0.6 VG S =3 . 0 V 0.4 40 30 Ciss 20 Coss 0.2 10 Crss 0 0 1.0 3.0 4.0 2.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 5.0 Figure 5. Gate Threshold Variation with Temperature 2.2 1.2 R DS(on) , NORMALIZED 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE 2.0 1.1 THRESHOLD VOLTAGE Vth , NORMALIZED GATE-SOURCE VDS=VGS ID=250uA 15 20 10 5 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 0 25 Figure 4. On-Resistance Variation with Temperature VGS=7V ID=10A 1.6 1.2 0.8 0.4 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150