CHENMKO 2SA1037M1PT

CHENMKO ENTERPRISE CO.,LTD
2SA1037M1PT
SURFACE MOUNT
General Purpose PNP Transistor
VOLTAGE 50 Volts
CURRENT 0.15 Ampere
APPLICATION
* Small Power Amplifier .
FEATURE
* Small surface mounting type. (FBPT-723)
* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-50mA)
* Low cob. Cob=4.0pF(Typ.)
FBPT-723
0.5±0.05
* PC= 150mW (Collector power dissipation).
1.2±0.05
CONSTRUCTION
1.2±0.05
* PNP Silicon Transistor
* Epitaxial planner type
0.05±0.04
0.84±0.05
0.32±0.05
0.15(REF.)
0.47(REF.)
C (3)
CIRCUIT
(3)
(2)
0.28±0.05
(1)
0.23(REF.)
(1) B
0.22±0.05
E (2)
0.25±0.05
FBPT-723
Dimensions in millimeters
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
-60
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
-50
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
-6
Volts
IC
-
-150
mAmps
PTOT
-
150
mW
TSTG
-55
+150
o
C
+150
o
C
Collector Current DC
Collector Power Dissipation
TA ≤ 25OC
Storage Temperature
Junction Temperature
TJ
-
2007-01
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
RATING CHARACTERISTICS ( 2SA1037M1PT)
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYPE
MAX.
UNITS
Collector Cut-off Current
PARAMETERS
VCB=-60V
CONDITION
ICBO
-
-
-0.1
uA
Emitter Cut-off Current
VEB=-6V
IEBO
-
-
-0.1
uA
DC Current Gain
VCE=-6V; Note 1
IC=-1mA; Note 2
hFE
120
-
560
Collector-Emitter Saturation Voltage
IC=-50mA; IB=-5mA
VCEsat
-
-
-0.5
Volts
Collector-Emitter Breakdown Voltage
IC=-1uA
VCEO
-50
-
-
Volts
Output Collector Capacitance
IE=ie=0; VCB=-12V;
f=1MHz
Cob
-
4.0
5.0
pF
Transition Frequency
IE=2mA; VCE=-12V;
f=30MHz
fT
-
140
-
MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560
RATING CHARACTERISTIC CURVES ( 2SA1037M1PT)
−10
Ta=100˚C
25˚C
−40˚C
−5
−2
−1
−0.5
−0.2
−0.1
−10
VCE=−6V
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Grounded emitter output
characteristics (1)
−35.0
Ta=25˚C
−31.5
−28.0
−8
−24.5
−21.0
−6
−17.5
−14.0
−4
−10.5
−7.0
−2
−3.5µA
0
−0.4
−0.8
−1.2
IB=0
−1.6
−2.0
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.3
−100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
−50
−20
Fig.2
Grounded emitter propagation
characteristics
COLLECTOR CURRENT : IC (mA)
Fig.1
−80
−60
Grounded emitter output
characteristics (2)
Ta=25˚C
−500
−450
−400
−350
−300
−250
−200
−150
−40
−100
−20
−50µA
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
RATING CHARACTERISTIC CURVES ( 2SA1037M1PT)
500
lC/lB=10
Ta=100˚C
25˚C
−0.5
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
−40˚C
200
100
50
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
−0.2 −0.5 −1
−2
VCE=−6V
−5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig. 6 Gain bandwidth product
vs. emitter current
1000
TRANSITION FREQUENCY : fT (MHz)
−1
Fig.5 DC current gain vs.
collector current
DC CURRENT GAIN : hFE
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Ta=25˚C
VCE=−12V
500
200
100
50
0.5
1
2
5
10
20
EMITTER CURRENT : IE (mA)
50
100