CHENMKO ENTERPRISE CO.,LTD 2SA2119PT SURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * For switching,for muting. FEATURE .019 (0.50) .041 (1.05) .033 (0.85) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) 3 CIRCUIT (2) .002 (0.05) .055 (1.40) .047 (1.20) (3) .007 (0.177) .066 (1.70) .119 (3.04) * PNP Silicon Transistor .110 (2.80) .082 (2.10) (1) CONSTRUCTION .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * A collector current is large. * Collector saturation voltage is low. VCE(sat)<=250mA At Ic=200mA/IB=10mA 1 2 SOT-23 Dimensions in inches and (millimeters) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -15 Volts Collector - Emitter Voltage Open Base VCEO - -12 Volts Collector Current DC IC - -500 mAmps Peak Collector Current ICM - -1000 mAmps PTOT - 150 Total Power Dissipation TA ≤ 25OC; Note 1 mW Storage Temperature TSTG -55 +150 o Junction Temperature TJ - +150 o C TAMB -55 +150 o C Operating Ambient Temperature C Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2004-12 RATING CHARACTERISTICS ( 2SA2119PT ) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. Typ. MAX. UNIT uA − − -0.1 collector-base breakdown voltage IC =-10uA collector-emitter breakdown voltage IC =-1mA -15 − V -12 − − − V BVEBO emitter-base breakdown voltage IE =-10uA -6 − − V hFE DC current transfer ratio VCE=-2V , IC=-10mA 270 − 680 VCEsat collector-emitter saturation voltage IC/IB=-200mA/-10mA − -100 -250 mV Cob collector output capacitance IE = 0; VCB = -10V ; f = 1 MH z − 6.5 − pF fT transition frequency IE = -10 mA; VCE= - 2V; f = 30 MHz − 260 − MHz ICBO collector cut-off current BVCBO BVCEO Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VCB=-15V RATING CHARACTERISTIC CURVES ( 2SA2119PT ) 1000 VCE=2V Ta=125°C Ta=25°C Ta= −40°C 100 50 20 10 5 2 200 Ta=125°C Ta=25°C Ta= −40°C 100 50 20 10 5 100 1.0 1 1.5 20 10 5 2 1 2 5 10 20 50 100 200 Fig.1 Grounded Emitter Propagation Characteristics Fig.2 DC Current Gain vs. Collector Current Ta=25°C 200 100 50 IC / IB=50 IC / IB=20 20 IC / IB=10 10 5 2 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 10000 IC / IB=20 5000 Ta= −40°C Ta=25°C Ta=125°C 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 1 500 1000 COLLECTOR CURRENT : IC (mA) 500 Ta=125°C Ta=25°C Ta= −40°C 50 500 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Base-Emitter Saturation Voltage vs.Collecter Current 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) 1000 TRANSITION FREQUENCY : fT (MHz) 0.5 IC / IB=20 200 2 0 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 500 BASE TO EMITTER VOLTAGE : VBE (V) 1 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC CURRENT GAIN : hFE 200 1 VCE=2V 500 500 BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Ta=25°C 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IC (mA) Fig.6 Gain Bandwidth Product vs. Emitter Current