CHENMKO 2SA2119TPT

CHENMKO ENTERPRISE CO.,LTD
2SA2119TPT
SURFACE MOUNT
Low Ferquency PNP Transistor
VOLTAGE 12 Volts
CURRENT 0.5 Ampere
APPLICATION
* For switching,for muting.
FEATURE
SC-75/SOT-416
* Small surface mounting type. (SC-75/SOT-416)
* A collector current is large.
* Collector saturation voltage is low.
VCE(sat)<=250mA
At Ic=200mA/IB=10mA
(2)
0.1
0.2±0.05
(3)
1.0±0.1
0.1
0.3±0.05
MARKING
(1)
CONSTRUCTION
* PNP Silicon Transistor
0.5 1.6±0.2
0.5
0.1
0.2±0.05
0.8±0.1
* PU
0.6~0.9
0.15±0.05
0~0.1
0.1Min.
1.6±0.2
3
CIRCUIT
1
2
SC-75/SOT-416
Dimensions in millimeters
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
-15
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
-12
Volts
Collector Current DC
IC
-
-500
mAmps
Peak Collector Current
ICM
-
-1000
mAmps
PTOT
-
150
Total Power Dissipation
TA ≤ 25OC; Note 1
mW
Storage Temperature
TSTG
-55
+150
o
Junction Temperature
TJ
-
+150
o
C
TAMB
-55
+150
o
C
Operating Ambient Temperature
C
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2004-12
RATING CHARACTERISTICS ( 2SA2119TPT )
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Typ.
MAX.
UNIT
uA
−
−
-0.1
collector-base breakdown voltage
IC =-10uA
collector-emitter breakdown voltage IC =-1mA
-15
−
V
-12
−
−
−
V
BVEBO
emitter-base breakdown voltage
IE =-10uA
-6
−
−
V
hFE
DC current transfer ratio
VCE=-2V , IC=-10mA
270
−
680
VCEsat
collector-emitter saturation
voltage
IC/IB=-200mA/-10mA
−
-100
-250
mV
Cob
collector output capacitance
IE = 0; VCB = -10V ; f = 1 MH z
−
6.5
−
pF
fT
transition frequency
IE = -10 mA; VCE= - 2V; f = 30 MHz
−
260
−
MHz
ICBO
collector cut-off current
BVCBO
BVCEO
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
VCB=-15V
RATING CHARACTERISTIC CURVES ( 2SA2119TPT )
1000
VCE=2V
Ta=125°C
Ta=25°C
Ta= −40°C
100
50
20
10
5
2
200
Ta=125°C
Ta=25°C
Ta= −40°C
100
50
20
10
5
100
1.0
1
1.5
20
10
5
2
1
2
5
10 20
50 100 200
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.2 DC Current Gain vs.
Collector Current
Ta=25°C
200
100
50
IC / IB=50
IC / IB=20
20
IC / IB=10
10
5
2
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
10000
IC / IB=20
5000
Ta= −40°C
Ta=25°C
Ta=125°C
2000
1000
500
200
100
50
20
10
1
2
5
10 20
50 100 200
1
500 1000
COLLECTOR CURRENT : IC (mA)
500
Ta=125°C
Ta=25°C
Ta= −40°C
50
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
1000
TRANSITION FREQUENCY : fT (MHz)
0.5
IC / IB=20
200
2
0
1000
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (mV)
500
BASE TO EMITTER VOLTAGE : VBE (V)
1
1000
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
DC CURRENT GAIN : hFE
200
1
VCE=2V
500
500
BASER SATURATION VOLTAGE : VBE (sat) (mV)
COLLECTOR CURRENT : IC (mA)
1000
VCE=2V
Ta=25°C
500
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
EMITTER CURRENT : IC (mA)
Fig.6 Gain Bandwidth Product vs.
Emitter Current