CHENMKO ENTERPRISE CO.,LTD 2SC5663TPT SURFACE MOUNT Low Ferquency NPN Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * For switching,for muting. FEATURE SC-75/SOT-416 * Small surface mounting type. (SC-75/SOT-416) * High current * Collector saturation voltage is low. VCE(sat)<=250mA At Ic=200mA/IB=10mA (2) 0.1 0.2±0.05 (3) 1.0±0.1 0.1 0.3±0.05 MARKING (1) CONSTRUCTION * NPN Silicon Transistor 0.5 1.6±0.2 0.5 0.1 0.2±0.05 0.8±0.1 * 31 0.6~0.9 0.15±0.05 0~0.1 0.1Min. C (3) 1.6±0.2 CIRCUIT (1) B SC-75/SOT-416 Dimensions in millimeters E (2) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 15 Volts Collector - Emitter Voltage Open Base VCEO - 12 Volts Collector Current DC IC - 500 mAmps Peak Collector Current ICM - 1000 mAmps PTOT - 150 Total Power Dissipation TA ≤ 25OC; Note 1 mW Storage Temperature TSTG -55 +150 o Junction Temperature TJ - +150 o C TAMB -55 +150 o C Operating Ambient Temperature Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. C 2007-06 RATING CHARACTERISTICS ( 2SC5663TPT ) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 2 5 °C unless otherwise SYMBOL PARAMETER CONDITIONS MIN. Typ. MAX. UNIT uA − − 0.1 15 − V 12 − − − V 6 − − V VCE=2V , IC=10mA 270 − 680 collector-emitter saturation voltage IC/IB=200mA/10mA − 90 250 mV Cob collector output capacitance IE = 0; VCB = 10V ; f = 1 MH z − 7.5 − pF fT transition frequency IE = -10 mA; VCE = 2 V; f = 30 MHz − 320 − MHz ICBO collector cut-off current BVCBO BVCEO collector-base breakdown voltage IC =10uA collector-emitter breakdown voltage IC =1mA BVEBO emitter-base breakdown voltage IE =10uA hFE DC current transfer ratio VCEsat Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VCB=15V RATING CHARACTERISTIC CURVES ( 2SC5663TPT ) 1000 VCE = 2V DC CURRENT GAIN : hFE 200 100 -40°C 25°C 10 25°C 50 20 5 200 100 50 20 10 5 2 1 1 0.5 1.0 1.5 25°C -40°C 2 0 1 2 200 100 50 IC/IB = 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) IE = 0A f = 1MHz Ta = 25°C 200 100 50 Cib 20 Cob 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 500 1000 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage IC/IB = 20 500 200 100 50 Ta = 125°C 25°C 20 -40°C 10 5 2 1 1 2 10000 50 100 200 500 1000 VCE = 2V Ta = 25°C 200 Pulsed 25°C 125°C 100 1000 500 200 50 20 100 10 50 5 20 2 10 20 500 Ta = -40°C 2000 10 1000 IC/IB = 20 5000 5 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) 1 1 2 5 10 20 50 100 200 500 1000 Fig.5 Base-emitter saturation voltage vs. collector current Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 500 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 1000 20 fT (MHZ) COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Ta = 25°C 500 10 10 Fig.2 DC current gain vs. collector current Fig.1 Grounded emitter propagation characteristics 20 5 1000 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) 1000 VCE = 2V Ta = 125°C 500 500 Ta = 1 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) !Electrical characteristic curves 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance Emitter input capacitance vs. base voltage