CHENMKO ENTERPRISE CO.,LTD 2SD2098PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. 1.6MAX. 4.6MAX. 0.4+0.05 2.5+0.1 CONSTRUCTION 0.8MIN. * NPN Cilicon Transistor +0.08 0.45-0.05 MARKING * hFE Classification Q: Q98 +0.08 0.40-0.05 +0.08 0.40-0.05 R: R98 1.50+0.1 1.50+0.1 1 1 Base 4.6MAX. 1.7MAX. 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E SC-62/SOT-89 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 50 Volts Collector - Emitter Voltage Open Base VCEO - 20 Volts Emitter - Base Voltage Open Collector VEBO - 6 Volts IC - 5 Amps Peak Collector Current ICM - 10 Amps Peak Base Current IBM - 0.5 Amps PTOT - 2.0 Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TSTG -55 W +150 o C C C TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-10 RATING CHARACTERISTIC CURVES ( 2SD2098PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=40V CONDITION ICBO - - 0.5 uA Emitter Cut-off Current IC=0; VEB=5V ICEO - - 0.5 uA DC Current Gain VCE=2V; Note 1 IC=0.5A hFE 120 - 390 Collector-Emitter Saturation Voltage IC=4A; IB=0.1A VCEsat - 0.25 1.0 Volts Base-Emitter Saturation Voltage IC=4A; IB=0.1A VBEsat - 1.0 2.0 Volts Collector Capacitance IE=ie=0; VCB=20V; f=1MHz CC - 30 - pF Transition Frequency IC=-0.05A; VCE=6.0V; f=100MHz fT - 150 - MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE(2) Classification Q: 120 to 270, R: 180 to 390. RATING CHARACTERISTIC CURVES ( 2SD2098PT ) Fig.1 Grounded emitter propagation characteristics Ta=100oC 25oC -25oC 0.2 0.1 0.05 0.02 0.01 5m 40mA 3 35mA 2 5mA 1 0.4 0.6 0.8 1.0 1.2 0 0 1.4 5000 0.8 1.2 2V 100 1V 50 20 IB 0mA 1.6 2.0 VCE=2V 2000 Ta=100oC 25oC -25oC DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 0.4 5000 VCE = 1V 200 100 50 20 10 1000 500 Ta=100oC 25oC -25oC 200 100 50 20 10 5 1m 2m 5m 0.01 0.020.05 0.10.2 0.5 1 2 5 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) 5 10 IC/IB=10 1 0.5 Ta=100oC 25oC -25oC 0.1 0.05 0.02 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 2 Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) 2 0.5 0.2 0.1 0.05 0.02 0.5 Ta=100oC 25oC -25oC 0.1 0.05 0.02 COLLECTOR CURRENT : IC (A) IC/IB=50 40 30 10 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Fig.9 Collector-emitter saturation voltage vs. collector current ( IV ) IC/IB=30 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Ta=25oC 1 COLLECTOR CURRENT : IC (A) 1 0.2 5 10 COLLECTOR CURRENT : IC (A) Fig.8 Collector-emitter saturation voltage vs. collector current ( III ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 5 1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2 COLLECTOR CURRENT : I (A) Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 200 Fig.5 DC current gain vs. collector current ( III ) 2000 0.2 VCE=5V 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 DC current gain vs. collector current ( II ) 500 1000 10 0.2 BASE TO EMITTER VOLTAGE : VBE (V) 1000 10mA Ta=25oC 2000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2m 1m 0 4 5000 5 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1 0.5 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : Ic (A) 2 Ta=25oC 30mA 25mA 20mA 15mA 50mA 45mA VCE = 2V DC CURRENT GAIN : hFE 5 10 5 Fig.3 DC current gain vs. collector current ( I ) Fig.2 Grounded emitter output characteristics 2 IC/IB=40 1 0.5 0.2 Ta=100oC 25oC -25oC 0.1 0.05 0.02 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 RATING CHARACTERISTIC CURVES ( 2SD2098PT ) IC/IB=50 1 0.5 Ta=100oC 25oC -25oC 0.2 0.1 0.05 0.02 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.13 Safe operating area 20 10 5 Ic max (Pulse) Pw =1 2 00 m s DC 1 500m Ta=25OC Single pulse Recommended land pattern s m 00 =1 s Pw m =1 s Pw 10m = Pw COLLECTOR CURRENT : IC (A) 50 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 500 Ta=25OC VCE=6V 200 100 50 20 10 5 2 1 -1m -2m -5m -10m -20m -50m -0.1 -0.2 EMITTER CURRENT : IE (A) -0.5 -1 Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 2 Fig.11 Gain bandwidth product vs. emitter current TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.10 Collector-emitter saturation voltage vs. collector current ( V ) 1000 500 Ta=25OC f=1MHz IC=0A IE=0A 200 Cib 100 50 Cob 20 10 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)