CHENMKO ENTERPRISE CO.,LTD 2SD882PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. 1.6MAX. 4.6MAX. 0.4+0.05 2.5+0.1 CONSTRUCTION 0.8MIN. * NPN Switching Transistor +0.08 0.45-0.05 MARKING 4.6MAX. 1.7MAX. * hFE Classification Q: Q82 +0.08 0.40-0.05 +0.08 0.40-0.05 P: P82 1.50+0.1 1.50+0.1 E: 882 1 1 Base 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E SC-62/SOT-89 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 40 Volts Collector - Emitter Voltage Open Base VCEO - 30 Volts Emitter - Base Voltage Open Collector VEBO - 5 Volts IC - 3 Amps Peak Collector Current ICM - 3 Amps Peak Base Current IBM - 0.5 Amps PTOT - 1500 mW TSTG -55 +150 o C C C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-8 RATING CHARACTERISTIC CURVES ( 2SD882PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=30V CONDITION ICBO - - 1.0 uA Emitter Cut-off Current IC=0; VEB=3V IEBO - - 1.0 uA DC Current Gain VCE=2V; Note 1 IC=0.02A IC=1.0A; Note 2 hFE 30 100 160 500 Collector-Emitter Saturation Voltage IC=2A; IB=0.2A VCEsat - 0.3 0.5 Volts Base-Emitter Saturatio Voltage IC=2A; IB=-0.2A VBEsat - 1.0 2.0 Volts Collector Capacitance IE=ie=0; VCB=10V; f=1MHz CC - 55 - pF Transition Frequency IC=0.02A; VCE=20V; f=100MHz fT - 100 - MHz SYMBOL MIN. TYPE MAX. UNITS ton - 0.1 - uSec ts - 1.0 - uSec tf - 0.1 - uSec SWITCHING TIMES ( Between 10% and 90% levels ) PARAMETERS CONDITION OUTPUT Storage Time IB1 IB2 INPUT 20uSec Fall Time IB1=-IB2=0.05A Duty cycle<1% IB2 30 ohmS Turn-on Time IB1 30V Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500. RATING CHARACTERISTIC CURVES ( 2SD882PT ) Typical Electrical Characteristics Figure 2. Cutoff Frequency - IC 3000 3000 1000 1000 V CE =5V CUTOFF FREQUENCY (MHz) COLLECTOR CAPACITANCE CC (pF) Figure 1. CC - Reverse VCB 100 10 1 0.1 100 10 1 0.3 1.0 3.0 10 30 100 1 10 COLLECTOR-BASE REVERSE BIAS VOLTAGE V CB (V) COMMON EMITTER V CE =2V 500 300 100 50 30 COLLECTOR POWER DISSIPATION PC (W) 1.5 1000 DC CURRENT GAIN hFE 1000 Figure 4. PC - TA Figure 3. hFE - IC 1.4 (1) Mounted on ceramic substrate ( 250mm 2x0.8t ) (2) No heat sink (1) 1.2 1.0 0.8 (2) 0.6 0.4 0.2 0 10 10 30 100 300 1000 0 3000 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE T A ( OC) COLLECTOR CURRENT I C (mA) Figure 5. VCE(sat) - IC Figure 6. VBE(sat) - IC 1 10 COMMON EMITTER 0.5 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 100 COLLECTOR CURRENT I C (mA) I C /I B =10 0.3 0.1 0.05 0.03 0.01 COMMON EMITTER 5 I C /I B =10 3 1 0.5 0.3 0.1 10 30 100 300 COLLECTOR CURRENT I C (mA) 1000 3000 10 30 100 300 COLLECTOR CURRENT I C (mA) 1000 3000 RATING CHARACTERISTIC CURVES ( 2SD882PT ) Typical Electrical Characteristics Figure 9. Safe Operation Area COLLECTOR CURRENT IC (mA) 30000 10000 1 mS 5000 3000 100 mS 1000 500 300 100 50 30 10 0.1 1S Single nonrepetitive pulse TA=25OC Curve must be derated linearly with increase in temperature Tested without a substrate 0.3 1.0 3.0 10 COLLECTOR-EMITTER VOLTAGE V CE (V) 30 100