CHENMKO BAS16DPT

CHENMKO ENTERPRISE CO.,LTD
BAS16DPT
SURFACE MOUNT
FAST SWITCHING DIODE ARRAY
VOLTAGE 75 Volts CURRENT 150 mAmpere
APPLICATION
* Ultra high speed switching
* For general purpose switching application
FEATURE
SC-88/SOT-363
* Small surface mounting type. (SC-88/SOT-363)
* High speed. (TRR= 1.5nSec Typ.)
* Suitable for high packing density.
* Maximum total power disspation is 200mW.
* Peak forward current is 300mA.
* Lead free devices
(1)
(6)
0.65
1.2~1.4
2.0~2.2
0.65
CONSTRUCTION
(4)
0.15~0.35 (3)
1.15~1.35
* Silicon epitaxial planar
MARKING
* DA
0.8~1.1
0.08~0.15
0~0.1
0.1 Min.
CIRCUIT
6
4
1
3
2.15~2.45
Dimensions in millimeters
SC-88/SOT-363
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
BAS16DPT
UNITS
Maximum Non-Repetitive Peak Reverse Voltage
RATINGS
VRM
100
Volts
Maximum RMS Voltage
VRMS
53
Volts
VRRM, VDC
75
Volts
IO
150
mAmps
Maximum Repetitive Peak Reverse and DC Blocking Voltage
Maximum Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
@t=1.0uSec
@t=1.0Sec
IFSM
2.0
1.0
Amps
Typical Junction Capacitance between Terminal (Note 1)
CJ
2.0
pF
Maximum Reverse Recovery Time (Note 2)
TRR
4.0
nSec
625
o
Thermal Resistance Junction to Ambient (Note 3)
Maximum Operating and Storage Temperature Range
R
JA
TJ,TSTG
-65 to +150
C/W
o
C
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Maximum Instantaneous Forward Voltage
@IF=1.0mA
@IF=10mA
@IF=50mA
@IF=150mA
Maximum Average Reverse Current
@VR=20V
@VR=75V
@VR=25V, TJ=150OC
@VR=75V, TJ=150OC
NOTES : 1.
2.
3.
4.
BAS16DPT
UNITS
VF
0.715
0.855
1.00
1.25
Volts
IR
25
1.0
30
50
nAmps
uAmps
uAmps
uAmps
Measured at 1.0 MHZ and applied reverse voltage of 0 volts.
Measured at applied froward current of 10mA and reverse current of 10mA.
Device mounted on FR-4 by 1 inch X 0.85 inch X 0.062 inch
ESD sensitive product handling required.
2002-9
FIG. 1 - TYPICAL FORWARD CURRENT
DERAING CURVE
125
100
75
50
25
200
100
50
Ta=85oC
50oC
25oC
0oC
o
- 30 C
20
10
5
2
1
0
25
0
50
75
100
125
150
0
0.2
0.6
0.8
1.0
1.4
1.2
FORWARD VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
FIG. 4 - REVERSE CHARACTERISTICS
4
2
1.6
10u
f=1MHz
Ta=100oC
1u
75oC
50oC
100
25oC
10
0oC
1
-
25oC
0.1
0
0
2
4
6
8
10
12
14
16
18
20
0
10
REVERSE VOLTAGE, (V)
20
30
40
50
60
70
REVERSE VOLTAGE, (V)
FIG. 5 - REVERSE RECOVERY TIME
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
10
REVERSE RECOVERY TIME, (nS)
0.4
AMBIENT TEMPERATURE, (oC)
REVERSE CURRENT, (nA)
JUNCTION CAPACITANCE, (pF)
FIG. 2 - FORWARD CHARACTERISTICS
500
FORWARD CURRENT, (mA)
AVERAGE FORWARD CURRENT, (%)
RATING CHARACTERISTIC CURVES ( BAS16DPT )
0.01µF
9
D.U.T.
VR=6V
8
5
7
PULSE GENERATOR
OUTPUT 50
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
FORWARD CURRENT, (mA)
8
9
10
50
SAMPLING
OSCILLOSCOPE
80