CHENMKO CH3906N1PT

CHENMKO ENTERPRISE CO.,LTD
CH3906N1PT
SURFACE MOUNT
PNP Switching Transistor
VOLTAGE 40 Volts
CURRENT 0.2 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FBPT-923
FEATURE
* Small surface mounting type. (FBPT-923)
* Low current (Max.=200mA).
* Suitable for high packing density.
0.5±0.05
1.0±0.05
* Low voltage (Max.=40V) .
* High saturation current capability.
* Voltage controlled small signal switch.
0.37(REF.)
1.0±0.05
0.25(REF.)
CONSTRUCTION
0.05±0.04
* PNP Switching Transistor
0.68±0.05
MARKING
0.42±0.05
* S2A
3
CIRCUIT
0.3±0.05
1
0.26±0.05
2
FBPT-923
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
-40
V
VCEO
collector-emitter voltage
open base
−
-40
V
VEBO
emitter-base voltage
open collector
−
-5
V
IC
collector current DC
−
-200
mA
ICM
peak collector current
−
-200
mA
IBM
peak base current
−
-100
mA
Ptot
total power dissipation
−
100
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 °C; note 1
2006-07
RATING CHARACTERISTIC CURVES ( CH3906N1PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
500
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = - 30 V
−
-50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 6 V
−
-50
nA
hFE
DC current gain
VCE = -1V; note 1
VCEsat
VBEsat
IC = -0.1mA
60
−
IC = -1mA
80
−
IC = -10 mA
100
300
IC = - 50 mA
60
−
IC = -100 mA
30
−
collector-emitter saturation
voltage
IC = -10 mA; IB = - 1 mA
−
-250
mV
IC = -50 mA; IB = - 5 mA
−
-400
mV
base-emitter saturation voltage
IC = -10 mA; IB = -1mA
-650
-850
mV
IC = -50 mA; IB = - 5 mA
−
-950
mV
Cc
collector capacitance
IE = ie = 0; VCB = - 5 V ; f = 1 MHz
−
4.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = -500 mV;
f = 1 MHz
−
10
pF
fT
transition frequency
IC = 10 mA; VCE = - 2 0 V ;
f = 100 MHz
250
−
MHz
F
noise Þgure
IC = 100 µA; VCE = - 5 V; RS = 1 k Ω ; −
f = 10 Hz to 15.7 kHz
4
dB
Switching times (between 10% and 90% levels);
−
65
ns
−
35
ns
rise time
−
35
ns
toff
turn-off time
−
300
ns
ts
storage time
−
225
ns
tf
fall time
−
75
ns
ton
turn-on time
td
delay time
tr
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
ICon = -10 mA; IBon = -1 mA;
IBoff = 1 mA
RATING CHARACTERISTIC CURVES ( CH3906N1PT )
Permissible Pulse Load
DC current gain hFE = f ( IC)
VCE = 1 V, normalized
Ptotmax/PtotDC = f ( tp)
10 3
10 1
Ptot max
5
Ptot DC
D=
tp
T
tp
h FE
T
10 2
125 C
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
5
25 C
10 0
-55 C
5
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 -1
-1
10
10 0
5 10 0
5 10 1
tp
mA
10
2
IC
Saturation voltage IC = f (VBEsat; VCEsat)
Short-circuit forward current
hFE = 10
transfer ratio h21e = f (IC)
VCE = 10V, f = 1MHz
10 3
2
mA
C
10 2
h 21e
5
5
V BE
V CE
10 2
10
1
5
5
10 0
0
0.2
0.4
0.6
0.8
1.0 V 1.2
V BE sat , V CE sat
10 1
-1
10
5
10
0
mA
IC
5
10
1
RATING CHARACTERISTIC CURVES ( CH3906N1PT )
Open-circuit output admittance
Delay time td = f (IC )
h22e = f (IC )
VCE = 10V, f = 1MHz
Rise time tr = f (IC )
10 2
s
h 22e
10 3
ns
5
tr
td
t r ,t d
10 2
h FE = 10
VCC = 3 V
10 1
15 V
40 V
5
10
1
V BE = 2 V
0V
10 0
-1
10
5
10
0
mA
5
10
10 0
0
10
1
5 10 1
5 10 2 mA 5 10 3
ΙC
ΙC
Fall time tf = f (IC)
Input impedance
h11e = f (IC )
VCE = 10 V, f = 1kHz
10 2
10 3
25 C
125 C
ns
h 11e
k
tf
VCC = 40 V
10 1
10 2
h FE = 20
10 1
h FE = 10
5
10 0
5
10 0
0
10
5 10 1
5 10 2 mA 5 10 3
ΙC
10 -1 -1
10
5
10 0
mA
ΙC
10 1