CHENMKO ENTERPRISE CO.,LTD CH3904M1PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FBPT-723 FEATURE * Small surface mounting type. (FBPT-723) * Low current (Max.=200mA). * Suitable for high packing density. 0.5±0.05 1.2±0.05 * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. 1.2±0.05 CONSTRUCTION 0.05±0.04 0.84±0.05 * NPN Switching Transistor 0.32±0.05 0.15(REF.) 0.47(REF.) 3 CIRCUIT (3) (1) (2) 0.28±0.05 0.23(REF.) 1 0.22±0.05 2 0.25±0.05 FBPT-723 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current DC − 200 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 V 2006-07 RATING CHARACTERISTIC CURVES ( CH3904M1PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 30 V − 50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V − 50 nA hFE DC current gain VCE = 1 V; note 1 − IC = 0.1 mA 60 IC = 1 mA 80 − IC = 10 mA 100 300 IC = 50 mA 60 − IC = 100 mA 30 − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 200 mV IC = 50 mA; IB = 5 mA − 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV IC = 50 mA; IB = 5 mA − 950 mV Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 pF Ce emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 8 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 − MHz F noise Þgure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 5 dB Switching times (between 10% and 90% levels); − 65 ns − 35 ns rise time − 35 ns toff turn-off time − 240 ns ts storage time − 200 ns tf fall time − 50 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA RATING CHARACTERISTIC CURVES ( CH3904M1PT ) Figure 2. Collector-Emitter saturation voltage Characteristic Figure 1. Power Derating COLLECTOR-EMITTER SATURATION VOLTAGE, VCEsat(V) POWER DISSIPATION, PD(mW) 200 160 120 80 40 0 0 20 40 60 80 100 120 140 160 180 200 Figure 3. DC Current Gain DC CURRENT GAIN, hFE VCE=10V Ta = 125oC 100 Ta = -25oC Ta = 25oC 10 1 0.1 1.0 10 100 COLLECTOR CURRENT, IC(mA) Ic/IB =10 0.1 0 0.1 1 10 COLLECTOR CURRENT, IC(mA) AMBIENT TEMPERATURE, TA(OC) 1000 1.0 1000 100 1000