CHENMKO ENTERPRISE CO.,LTD CH501S-40PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.1 Ampere APPLICATION * Low power rectification SC-79/SOD-523 FEATURE * Small surface mounting type. (SC-79/SOD-523) * Low VF. (VF=0.43V Typ. at 100mA) * High reliability Cathode (1) (2) 0.25~0.35 CONSTRUCTION 0.75~0.85 1.1~1.3 * Silicon epitaxial planar MARKING *A 0.5~0.77 0.07~0.17 1.5~1.7 (2) CIRCUIT Dimensions in millimeters (1) SC-79/SOD-523 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL CH501S-40PT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 45 Volts Maximum RMS Voltage VRMS 32 Volts Maximum DC Blocking Voltage VDC 40 Volts IO 0.1 Amps Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave IFSM 1.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 6.0 pF Maximum Operating Temperature Range TJ +125 o C TSTG -40 to +125 o C Storage Temperature Range o ELECTRICAL CHARACTERISTICS ( At TA = 25 C unless otherwise noted ) CHARACTERISTICS SYMBOL CH501S-40PT UNITS Maximum Instantaneous Forward Voltage at IF(1)= 10mA VF(1) 0.34 Volts Maximum Instantaneous Forward Voltage at IF(2)= 100mA VF(2) 0.55 Volts IR 30 uAmps Maximum Average Reverse Current at VR= 10V NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. 2002-5 RATING CHARACTERISTIC CURVES ( CH501S-40PT ) FIG. 2 - REVERSE CHARACTERISTICS FIG. 1 - FORWARD CHARACTERISTICS 10m REVERSE CURRENT, (A) o Ta=125 C o C 100 -25 o C 25 o C 75 o C 5 10 Ta =1 2 FORWARD CURRENT, (mA) 1000 o 75 C 100u 10u o 25 C 1u 0.1u 1 0 0.1 0.2 0.3 0.4 0.5 10 20 30 40 FORWARD VOLTAGE, (V) REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, (%) 10 10 0 0.6 100 JUNCTION CAPACITANCE , (pF) 1m 5 10 15 20 25 REVERSE VOLTAGE, (V) 30 35 120 100 80 60 40 20 0 0 25 50 75 100 AMBIENT TEMPERATURE, (oC) 125 150