CHENMKO ENTERPRISE CO.,LTD CH740H-40PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.04 Ampere APPLICATION * Low barrier diode for detectors up to GHz frequencies SC-76/SOD-323 FEATURE * Small surface mounting type. (SC-76/SOD-323) * Low VF and low IR * High reliability Cathode Band (1) (2) 0.25~0.4 1.15~1.4 CONSTRUCTION 1.6~1.8 * Silicon epitaxial planar MARKING * JC 0.6~1.0 0.08~0.177 0.25~0.45 0.1Max. CIRCUIT 2.3~2.7 (2) Dimensions in millimeters (1) SC-76/SOD-323 o MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted ) RATINGS CH740H-40PT SYMBOL Maximum Recurrent Peak Reverse Voltage UNITS MIN. TYP. MAX. VRRM - - 40 Volts IO - - 40 mAmps PTOT - - 150 mW Typical Series Inductance LS - 1.8 - nH Typical Case Capacitance CC - 0.1 - pF Typical Junction Capacitance between Terminal (Note 1) CJ - 0.35 0.6 pF Typical Differential Resistance (Note 2) RO - 225 - k TJ,TSTG -55 - +150 o Maximum Average Forward Rectified Current Total Power Dissipation, TS< 85 oC Operating and Storage Temperature Range C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CH740H-40PT CHARACTERISTICS SYMBOL UNITS MIN. TYP. MAX. Maximum Instantaneous Forward Voltage at IF= 2mA VF - 0.58 1.00 Volts Maximum Average Reverse Current at VR= 40V IR - - 10 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at 1.0 KHZ and applied reverse voltage of 0 volts. 2. ESD sensitive product handling required. 2002-6 RATING CHARACTERISTIC CURVES ( CH740H-40PT ) Forward current I F = f (VF ) Leakage current I R = f (VR) TA = parameter TA = Parameter 10 3 10 4 uA uA 125°C 10 2 TA = 25°C 10 3 IR IF TA = 85°C TA = 125°C TA = -40°C 85°C 10 1 10 2 10 0 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V 10 -1 0 2.0 25°C 5 10 15 20 25 V 30 40 VR VF Diode capacitance C J = f (VR) Rectifier voltage VA = f (VE) f = 1MHz f = 900 MHz RL = parameter in 10 4 mV 0.6 10 3 pF 0.4 VA CJ 10 2 10 1 0.3 10 0 0.2 10 -1 10 -2 0.1 0 0 5 10 15 20 V 30 VR 10 -3 0 10 10 1 10 2 10 3 mV 10 4 VE