CHENMKO ENTERPRISE CO.,LTD CH837SPT SURFACE MOUNT NPN Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts CURRENT 0.2 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-74/SOT-457 * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. (1) * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated NPN transistors in one package. (6) 0.95 1.7~2.1 2.7~3.1 0.95 (3) (4) 0.25~0.5 CONSTRUCTION 1.4~1.8 * Two NPN transistors in one package. 0.935~1.3 0.08~0.2 0~0.15 0.3~0.6 CIRCUIT C1 B2 E2 6 5 4 2.6~3.0 TR2 TR1 1 2 3 E1 B1 C2 SC-74/SOT-457 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 45 V VCES collector-base voltage open emitter − 50 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 200 mA ICM peak collector current − 400 mA IBM peak base current − 2 mA Ptot total power dissipation − 300 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-12 RATING CHARACTERISTIC ( CH837SPT ) THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT note 1 415 K/W thermal resistance from junction to ambient Rth j-s Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO PARAMETER CONDITIONS collector cut-off current MIN. MAX. UNIT IE = 0; VCB = 30 V − 15 nA IC = 0; VCB = 30 V; TA = 150 OC − 30 uA nA IEBO emitter cut-off current IC = 0; VEB = 4 V − 15 hFE DC current gain IC = 2.0 mA; VCE = 5.0V; note 1 110 630 VCEsat collector-emitter saturation voltage IC = 10 mA ; I B = 0.5 mA IC = 10 mA ; I B = 0.5 mA − 250 mV − 650 mV base-emitter saturation voltage IC = 2.0 mA;VCE = 5.0 V 0.58 0.70 V IC = 10 mA;VCE = 5.0 V − 0.77 V VBEsat Cc collector capacitance IE = ie = 0; VCB = 10V ; f = 1 MHz − 2.0 pF fT transition frequency IC = 50 mA; VCE = 5 V ; f = 100 MHz 200 − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Typical Puls ed Current Gain vs Collector Curr ent 1200 V CE = 5.0 V 125 °C 1000 800 600 25 °C 400 - 40 °C 200 0 0.01 0.03 0.1 0.03 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 VCESAT - COLLE CTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN RATING CHARACTERISTIC CURVES ( CH837SPT ) Collector-Emitter Saturation Voltage vs Collector Current 0.3 0. 25 B= 10 0.2 125 °C 0. 15 0.1 0.0 5 0.1 25 °C - 40 °C 1 10 I C - COLLECTOR CURRENT (mA) 100 RATING CHARACTERISTIC CURVES ( CH837S ) 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 B= 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter ON Voltage vs Collector Curre nt VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs C ollect or Current 1 ° - 40 C 0.8 ° 25 C 0.6 ° 125 C 0.4 V CE = 5.0 V 0.2 0.1 f = 1.0 MHz CAPACITANCE (pF) VCB = 45V 1 150 O Cont ours of Constant Gain Bandwidth Product (f T ) 10 7 2 1 0.1 3 C te 2 C ob 1 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 Norm alized Coll ect or-Cut off Current vs Ambient Temperature 1000 175 MHz 5 3 4 0 50 75 100 125 TA - AMBIENT TEMPERATURE ( ° C ) CHARACTERISTICS vs vALUE AT TA=25 C I CBO - COLLECTOR CURRENT (nA) 5 10 0.1 25 40 Inp ut and Output Capacitanc e vs Reverse Bias Voltage Collect or-Cutoff Current vs Ambient Tem perature V CE - COLLECTOR VOLTAGE (V) 1 10 I C - COLL ECTOR CURRENT (mA) 150 MHz 125 MHz 100 MHz 75 MHz 1 10 I C - COLLECTOR CURRENT (mA) 100 100 10 1 25 50 75 100 125 T A - A MB IE NT TEMP ERATURE ( °C) 150 RATING CHARACTERISTIC CURVES ( CH837SPT ) Noise Figure vs F requency Wideband N oise Frequenc y vs S ource Resi st anc e I C = 200 uA, R S = 10 k 5 V CE = 5.0 V NF - NOISE FIGURE (dB) 8 I C = 100 uA, R S = 10 k 6 I C = 1.0 m A, R S = 500 4 I C = 1.0 mA, R S = 5.0 k 2 V CE = 5.0V 0 0.0001 0.001 0.01 0.1 1 f - FREQUENCY (MHz) 10 100 4 BA NDWIDTH = 15.7 kHz I C = 100 uA 3 I C = 30 uA 2 1 I C = 10 uA 0 1,000 2,000 5,000 500 400 300 200 100 0 0 10,000 20,000 50,000 RS - SOURCE RESISTANCE ( Ohms ) Power Dissipation vs Ambient Temperature P D - POWER DISSIPATION (mW) NF - NOISE FIGURE (dB) 10 25 50 75 100 TEMPERATURE (º C) 125 150 100,000