CHENMKO CHDTC314TUPT

CHENMKO ENTERPRISE CO.,LTD
CHDTC314TUPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 30 Volts
CURRENT 600 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SC-70/SOT-323
* Small surface mounting type. (SC-70/SOT-323)
* High current gain.
* Suitable for high packing density.
(2)
* Low colloector-emitter saturation(VCE(sat)=40mV
at IC/IB=50mA/2.5mA).
* High Collector current (IC(Max.)=600mA).
* Internal isolated NPN transistors in one package.
* Built in single resistor(R1=10kΩ, Typ. )
(3)
(1)
1.3±0.1
0.65
2.0±0.2
0.65
0.3±0.1
1.25±0.1
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
MARKING
TUH
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
Emitter
CIRCUIT
Base
2
2.0~2.45
1
TR
R1
3
Collector
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VALUE
CONDITIONS
UNIT
VCBO
Coll ector -Base voltage
30
V
VCEO
Collector-Emitter voltage
15
V
VEBO
Emitter-Base voltage
5
V
IC(Max.)
Coll ector current
600
mA
PD
Power dissipation
200
mW
TSTG
Storage temperature
−55 ∼ +150
O
TJ
Junction temperature
+150
O
C
140
O
C/W
RθJ-S
Thermal resistance , Note 1
Tamb ≤ 25 OC, Note 1
junction - soldering point
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2005-06
RATING CHARACTERISTIC ( CHDTC314TUPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
30
−
−
V
15
−
−
V
IE=50uA
5.0
−
−
V
Collector cutoff current
VCB=20V
−
−
0.5
uA
Emitter cutoff current
VEB=4V
−
−
0.5
uA
VCE(sat)
Collector-emitter saturation voltage
IC/IB=50mA/2.5mA
−
0.08
V
hFE
DC current gain
IC=50mA; VCE=5.0V
100
0.04
250
R1
fT
Input resistor
Transition frequency
10
13
−
BVCBO
Collector-base breakdown voltage
BVCEO
Collector-emitter breakdown voltage IC=1.0mA
BVEBO
Emitter-base breakdown voltage
ICBO
IEBO
Note
1.Pulse test: tp≤300uS; δ≤0.02.
IC=50uA
IE=-50mA, VCE=10.0V
f=100MHz
7
−
200
600
KΩ
MHz
RATING CHARACTERISTIC CURVES ( CHDTC314TUPT )
Typical Electrical Characteristics
Fig.1 DC current gain vs. collector
current
VCE = 5V
DC CURRENT GAIN : hFE
500
200
Ta=100OC
25OC
-40OC
100
50
20
10
5
2
1
1m
10m
100m
COLLECTOR CURRENT : IC (A)
500m
COLLECsaturationTOR VOLTAGE : VCE(sat) (V)
1k
Fig.2 Collector-emitter voltage vs.
collector current
1
lO/lI=20
500m
200m
100m
Ta=100OC
25OC
-40 OC
50m
20m
10m
5m
2m
1m
1m
10m
100m
COLLECTOR CURRENT : IC (A)
500m