CHENMKO CHM540ANPT

CHENMKO ENTERPRISE CO.,LTD
CHM540ANPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 100 Volts
CURRENT 36 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
D2PAK
FEATURE
* Small package. (D2PAK)
* Super high dense cell design for extremely low RDS(ON).
* High power and current handing capability.
0.420(10.67)
0.190(4.83)
0.380(9.69)
0.160(4.06)
0.245(6.22)
0.055(1.40)
MIN.
0.045(1.14)
* N-Channel Enhancement
0.320(8.13)
0.625(15.88)
CONSTRUCTION
0.575(14.60)
0.360(9.14)
K
0.055(1.40)
0.047(1.19)
1
3
2
0.110(2.79)
0.090(2.29)
0.100(2.54)
0.095(2.41)
D (3)
CIRCUIT
0.025(0.64)
0.037(0.940)
0.018(0.46)
0.027(0.686)
0.110(2.79)
0.080(2.03)
1 Gate
2 Source
3 Drain ( Heat Sink )
(1) G
Dimensions in inches and (millimeters)
S (2)
Absolute Maximum Ratings
Symbol
D2PAK
TA = 25°C unless otherwise noted
Parameter
CHM540ANPT
Units
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
Maximum Drain Current - Continuous
36
ID
A
- Pulsed
(Note 3)
PD
Maximum Power Dissipation at Tc = 25 °C
TJ
TSTG
120
140
W
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
62.5
°C/W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2008-01
ELECTRICAL CHARACTERISTIC ( CHM540ANPT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
100
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
V
25
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
4
V
48
mΩ
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=18A
40
g FS
Forward Transconductance
VDS =25V, ID = 18A
14
2
S
Dynamic Characteristics
Ciss
832
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0 MHz
240
pF
105
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
37.5
VDS=80V, ID=18A
48
nC
6
VGS=10V
18
t on
Turn-On Time
V DD= 50V
13
40
tr
Rise Time
I D = 18A , VGS = 10 V
11
35
t off
Turn-Off Time
RGEN= 5.1 Ω
32
65
tf
Fall Time
15
45
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 18A , VGS = 0 V
(Note 1)
(Note 2)
36
A
1.3
V