CHENMKO ENTERPRISE CO.,LTD CHP203KPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.125 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * E6 CIRCUIT (2) (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .055 (1.40) .047 (1.20) (3) .045 (1.15) .033 (0.85) (1) Dimensions in inches and (millimeters) (3) .002 (0.05) * Maximum total power disspation is 250mW. * Peak forward current is 500mA. .019 (0.50) .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density. .018 (0.30) FEATURE SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL CHP203KPT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 85 Volts Maximum RMS Voltage VRMS 56 Volts Maximum DC Blocking Voltage VDC 80 Volts IO 0.125 Amps RATINGS Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. IFSM 4.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 1.5 pF Maximum Reverse Recovery Time (Note 2) TRR 4.0 nSec TJ +150 o C -65 to +150 o C Maximum Operating Temperature Range Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL CHP203KPT UNITS Maximum Instantaneous Forward Voltage at IF= 100mA CHARACTERISTICS VF 1.20 Volts Maximum Average Reverse Current at VR= 80V IR 0.5 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 10mA to reverse current of 10mA; RL=100 Ohms. 3. ESD sensitive product handling required. 2002-4 FIG. 1 - TYPICAL FORWARD CURRENT DERAING CURVE 125 FIG. 2 - FORWARD CHARACTERISTICS 500 FORWARD CURRENT, (mA) AVERAGE FORWARD CURRENT, (%) RATING CHARACTERISTIC CURVES ( CHP203KPT) 100 75 50 25 0 200 100 50 Ta=85oC 50oC 25oC 0oC o -30 C 20 10 5 2 1 25 0 50 75 100 125 0 150 0.2 0.4 o AMBIENT TEMPERATURE, ( C) 0.6 0.8 1.0 1.4 1.2 1.6 FORWARD VOLTAGE , (V) FIG. 3 - REVERSE CHARACTERISTICS FIG. 4 - TYPICAL JUNCTION CAPACITANCE o JUNCTION CAPACITANCE, (pF) REVERSE CURRENT, (nA) Ta=100 C 75oC 100 50oC 10 25oC 1 0oC - o 25 C 0.1 0.01 f=1MHz 4 2 0 20 0 30 40 50 60 70 80 0 2 4 8 10 12 14 16 18 FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT FIG. 5 - REVERSE RECOVERY TIME 10 REVERSE RECOVERY TIME, (nS) 6 REVERSE VOLTAGE, (V) REVERSE VOLTAGE, (V) 0.01µF D.U.T. 9 8 50 7 PULSE GENERATOR OUTPUT 50 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 FORWARD CURRENT, (mA) 8 9 10 50 SAMPLING OSCILLOSCOPE 20