CHENMKO ENTERPRISE CO.,LTD CHRT5993TPT SURFACE MOUNT NPN Silicon RF Transistor VOLTAGE 11 Volts CURRENT 50 mAmpere APPLICATION * UHF Converter * Local Oscillator SC-75/SOT-416 FEATURE * Small surface mounting type. (SOT-416/SC-75) * High Transition frquency. (2) 0.1 0.2±0.05 (3) (1) 1.0±0.1 CONSTRUCTION 0.1 0.3±0.05 * NPN RF Transistor 0.5 1.6±0.2 0.5 0.1 0.2±0.05 0.8±0.1 0.6~0.9 0.15±0.05 0~0.1 0.1Min. 1.6±0.2 C (3) CIRCUIT (1) B E (2) SC-75/SOT-416 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT open emitter − 20 V collector-emitter voltage open base − 11 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 50 mA PC Collector power dissipation − 0.15 W −50 +150 °C − 150 °C V CBO collector-base voltage V CEO Tstg Tj storage temperature junction temperature Note 1. Transistor mounted on an FR4 printed-circuit board. 2007-05 RATING CHARACTERISTIC CURVES ( CHRT5993TPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. Characteristic Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 20 11 3 56 1400 - Typ. 3200 0.8 Max. 0.5 0.5 180 0.5 1.5 Unit V V V uA uA V MHz pF Conditions IC= 10uA, IE= 0A IC= 1mA, IB= 0A IE= 10uA, IC= 0A VCB= 10V, IE= 0A VEB= 2V, IE= 0A VCE= 10V, IC= 5mA IC= 10mA, IB= 5mA VCE= 10V, IE= -10mA VCB= 10V, f = 1MHz, IE= 0A RATING CHARACTERISTIC CURVES ( CHRT5993TPT ) Figure 1. Collector-Emitter Saturation Voltage vs Collector Current 10 IC/IB=2 f=1.0MHz COLLECTOR OUTPUT CAPACITANCE, Cob(pF) COLLECTOR-EMITTER SATURATION VOLTAGE, VCEsat(mV) 1000 Figure 2. Collector-Base Voltage vs Collector Output Capacitance 100 Ta = 25oC 10 0.1 1.0 10 100 COLLECTOR CURRENT, IC(mA) Figure 3. DC Current Gain DC CURRENT GAIN, hFE VCE=10V Ta = 25oC 100 10 1.0 10 COLLECTOR CURRENT, IC(mA) Ta = 25oC 0.1 0.1 1.0 10 COLLECTOR-BASE VOLTAGE, VCB(V) 1000 0.1 1 100 100