CHENMKO ENTERPRISE CO.,LTD CHT06UPNPT SURFACE MOUNT NPN/PNP Silicon AF Transistor Array VOLTAGE 80 Volts CURRENT 0.5 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other switching applications. FEATURE SC-74/SOT-457 * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. (1) * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated NPN/PNP transistor in one package. (6) 0.95 1.7~2.1 2.7~3.1 0.95 (3) (4) 0.25~0.5 CONSTRUCTION 1.4~1.8 * NPN/PNP transistor in one package. 0.935~1.3 0.08~0.2 0~0.15 0.3~0.6 CIRCUIT C1 B2 E2 6 5 4 2.6~3.0 TR2 TR1 1 2 3 E1 B1 C2 SC-74/SOT-457 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 80 VCEO collector-emitter voltage open base − 80 V VEBO emitter-base voltage open collector − 4 V IC collector current (DC) − 500 mA ICM peak collector current − 1000 mA IBM peak base current − 200 mA Ptot total power dissipation − 330 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-7 RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS VALUE UNIT note 1 105 K/W thermal resistance from junction to soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 80 V − 100 nA IC = 0; VCB = 80 V; TA = 150 OC − 20 uA ICEO emitter cut-off current IC = 0; VCE = 60 V − 100 nA hFE DC current gain IC = 10 mA; VCE = 1.0V; note 1 100 − IC = 100 mA; VCE = 1.0V 100 − − 250 mV VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA VBE(ON) base-emitter saturation voltage IC = 100 mA; VCE = 1 V − 1.2 V Cc collector capacitance IE = ie = 0; VCB = 10V ; f = 1 MHz − 12 pF Ce emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 120 pF fT transition frequency IC = 20 mA; VCE = 5 V ; f = 100 MHz 100 − MHz F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 1.0 kHz − 4 dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), hFE = 10 IC = f (VBEsat ), hFE = 10 ΙC 10 3 10 3 mA mA ΙC 150 ooC 25 C -50 oC 10 2 10 2 5 5 10 1 10 1 5 5 10 0 10 0 5 5 10 -1 0 0.2 150 oC 25 oC -50 oC 0.4 0.6 V 10 -1 0.8 0 1.0 2.0 3.0 DC current gain hFE = f (IC ) Transition frequency fT = f (IC) VCE = 5V VCE = 5V 10 3 h FE 5 V 4.0 V BEsat VCEsat 10 3 fT 100 ûC 25 ûC MHz 5 -50 ûC 10 2 5 10 2 5 10 1 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 ΙC 10 1 10 0 10 1 10 2 mA ΙC 10 3 RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), hFE = 10 IC = f (VBEsat ), h FE = 10 10 3 10 3 ΙC Ι C mA mA 100 oC 25 oC -50 oC o 10 100 C 25 oC -50 oC 2 10 2 5 5 10 1 5 10 1 10 0 5 5 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 V 10 -1 0.8 0 0.5 V 1.0 V CEsat 1.5 V BEsat DC current gain hFE = f (IC ) Collector current IC = f (VBE) VCE = 1V VCE = 1V 10 3 10 3 mA 100 oC 25 oC -50 oC ΙC h FE 10 2 100 oC 10 2 25 oC 5 -50 oC 10 1 5 10 1 10 0 5 10 0 -1 10 10 0 10 1 10 2 ΙC mA 10 3 10 -1 0 0.5 V 1.0 V BE 1.5 RATING CHARACTERISTIC CURVES ( CHT06UPNPT ) Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT 5 10 2 5 10 1 10 0 5 10 1 5 10 2 mA ΙC 10 3