CHENMKO ENTERPRISE CO.,LTD CHT200PPT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 25 Volts CURRENT 5 Ampere FEATURE * Small flat package. (DPAK) * Low saturation voltage VCE(sat)=0.3V(max.)(IC=500mA) * High saturation current capability. DPAK CONSTRUCTION .024 (0.60) .268 (6.80) .252 (6.40) .023 (0.58) .018 (0.46) C (3) CIRCUIT .020 (0.51) .028 (0.70) .019 (0.50) .035 (0.90) .181 (4.60) .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) .394 (10.00) .354 (9.00) (1) (3) (2) .050 (1.27) .020 (0.51) .110 (2.80) .087 (2.20) .228(5..80) .217 (5.40) .050 (1.27) .030 (0.77) * NPN Switching Transistor 1 Base 2 Emitter (1) B 3 Collector ( Heat Sink ) E(2) DPAK Dimensions in inches and (millimeters) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 40 Volts Collector - Emitter Voltage Open Base VCEO - 25 Volts Emitter - Base Voltage Open Collector VEBO - 8 Volts IC - 5 Amps ICM - 10 Amps IBM - 1.0 Amps PTOT - 1400 mW TSTG -55 +150 o C +150 o C Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature TA ≤ 25OC TJ - 2007-7 RATING CHARACTERISTIC CURVES ( CHT200PPT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=40V ICBO - - 0.1 uA Emitter Cut-off Current IC=0; VEB=8V IEBO - - 0.1 uA DC Current Gain VCE=1V; Note 1 IC=500mA IC=2.0A IC =5.0A; VCE=2V hFE 70 45 10 - 180 - Collector-Emitter Saturation Voltage IC=500mA; IB=50mA IC=2A; IB=200mA IC=5A; IB=1A VCEsat - - 0.3 0.75 1.8 Volts Base-Emitter Saturatio Voltage IC=5A; IB=1A VBEsat - - 2.5 Volts Collector Capacitance IE=ie=0; VCB=10V; f=0.1MHz CC - - 80 pF Transition Frequency IC=0.1A; VCE=10V; f=10MHz fT 65 - - MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. CONDITION